Diodes 2DD2098R User Manual
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Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Resistance R
• Complementary PNP Type Available (2DB1386)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
NEW P PRORODUCUCT EW D T
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
= 75mΩ at 4A
CE(SAT)
LOW V
2DD2098R2DD2098R
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
SOT89-3L
L
L
E
C
O
E
3
C
C
4
O
T
2
B
1
W
E
I
V
P
Schematic and Pin Configuration
B
2,4
1
E
S
A
3
E
T
I
M
T
O
R
C
T
E
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
CM
I
C
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
= 25°C unless otherwise specified
A
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
⎯
T
C
⎯
ob
R
, T
T
J
50
20
6
⎯ ⎯
⎯ ⎯
⎯
180
JA
θ
STG
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.3 1.0 V
⎯
220
14
390
50 V
20 V
6 V
10 A
5 A
1 W
125 °C/W
-55 to +150 °C
0.5
0.5
⎯
⎯
V
V
V
μA
μA
⎯
MHz
pF
= 50μA, IE = 0
I
C
= 1mA, IB = 0
I
C
= 50μA, IC = 0
I
E
VCB = 40V, IE = 0
VEB = 5V, IC = 0
= 4A, IB = 0.1A
I
C
IC = 0.5A, VCE = 2V
= 6V, IE = -50mA
V
CE
f = 100MHz
= 20V, IE = 0,
V
CB
f = 1MHz
DS31299 Rev. 4 - 2
1 of 4
www.diodes.com
2DD2098R
© Diodes Incorporated
P, P
OWER
P
TIO
1.0
3.0
0.8
N (W)
A
0.6
DISSI
0.4
D
0.2
NEW PRODUCT
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
600
500
T = 150°C
A
400
T = 85°C
A
300
T = 25°C
A
200
T = -55°C
A
100
0
0.001 0.01 0.1 1 10
R = 125°C/W
θ
JA
100 125
75
A
Fig. 1 Power Dissipation vs.
Ambient Temperat ure (Note 3)
V = 2V
CE
150
2.5
2.0
1.5
1.0
0.5
0
0.5
I/I = 40
0.4
CB
0.3
0.2
T = 150°C
A
T = 85°C
A
0.1
T = 25°C
A
T = -55°C
A
0
0.001 0.01 0.1 1 10
V = 2V
CE
T = -55°C
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
0.001 0.01 0.1 1 10
DS31299 Rev. 4 - 2
2 of 4
www.diodes.com
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 40
CB
0.001 0.01 0.1 1 10
2DD2098R
© Diodes Incorporated
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