Diodes 2DD1766P-Q-R User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (2DB1188)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
NEW PRODUCT
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
2DD1766P/Q/R
NPN SURFACE MOUNT TRANSISTOR
SOT89-3L
T
O
R
L
L
C
E
C
O
3
E
C
C
4
O
T
2
B
1
W
E
I
V
P
Schematic and Pin Configuration
B
2,4
1
E
S
A
3
E
T
I
M
T
E
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
CM
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31167 Rev. 4 - 2
= 25°C unless otherwise specified
A
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
2DD1766P
2DD1766Q
2DD1766R
h
FE
f
T
C
ob
1 of 4
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T
40
32
5
⎯ ⎯
⎯ ⎯
⎯
82
120
180
⎯
⎯
C
D
R
JA
θ
, T
j
STG
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.3 0.8 V
⎯
⎯
⎯
220
13
-55 to +150 °C
1
1
180
270
390
⎯
⎯
40 V
32 V
5 V
2.5 A
2 A
1 W
125 °C/W
V
I
= 50μA, IE = 0
C
V
I
= 1mA, IB = 0
C
V
I
= 50μA, IC = 0
μA
μA
⎯
⎯
⎯
MHz
pF
E
V
= 20V, IE = 0
CB
V
= 4V, IC = 0
EB
IC = 2A, IB = 0.2A
V
= 3V, IC = 0.5A
CE
= 5V, IE = -50mA,
V
CE
f = 100MHz
= 10V, IE = 0,
V
CB
f = 1MHz
2DD1766P/Q/R
© Diodes Incorporated
P, P
OWER
P
TIO
1.0
0.8
N (W)
A
0.6
DISSI
0.4
D
0.2
NEW PRODUCT
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
Fig. 1 Power Dissipation vs.
Ambient Temperature ( No te 3)
V = 3V
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
CE
0.001 0.01 0.1 1 10
T = 25°C
A
I/I = 10
CB
T = 150°C
A
T = 85°C
A
T = -55°C
A
T = -55°C
T = -55°C
A
T = 25°C
A
T = 85°C
A
V = 3V
T = 150°C
A
CE
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
DS31167 Rev. 4 - 2
2 of 4
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2DD1766P/Q/R
© Diodes Incorporated
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