Diodes 2DD1664P-Q-R User Manual
R
Features
• BV
• Max Continuous Current I
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (2DB1132)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
CEO
> 32V
= 1A
C
SOT89
B
Top View Device Symbol Pin Out – Top View
2DD1664P/Q/
32V NPN SUFACE MOUNT TRANSISTOR IN SOT89
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic. “Green” Molding Compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.055 grams (Approximate)
C
E
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DD1664P-13 N13P 13 12 2,500
2DD1664Q-13 N13Q 13 12 2,500
2DD1664R-13 N13R 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
Marking Information
2DD1664P/Q/R
Document number: DS31143 Rev. 5 - 2
YWW
N13x
1 of 6
www.diodes.com
N13x = Product Type Marking Code:
Where N13P = 2DD1664P
N13Q = 2DD1664Q
N13R = 2DD1664R
YWW = Date Code Marking
Y = Last digit of year ex: 1 = 2011
WW = Week code (01 – 53)
© Diodes Incorporated
July 2012
R
P, P
OWER
PATIO
N
Maximum Ratings (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 6)
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
I
CM
40 V
32 V
6 V
1 A
2 A
2DD1664P/Q/
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on FR-4 PCB with minimum suggested pad layout; high coverage of single sided 1 oz copper, in still air conditions
6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
P
R
R
T
J, TSTG
D
θJA
θJL
1 W
125
22
-55 to +150
°C/W
°C/W
1.0
°C
0.8
(W)
0.6
DISSI
0.4
D
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
Figur e 1. Power Dissi pation vs. Ambie nt Temperatur e
A
75 100 125
150
2DD1664P/Q/R
Document number: DS31143 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
Loading...