Diodes 2DD1621T User Manual

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Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

2DD1621T

NPN SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT89-3L

• Case Material: Molded Plastic, "Green” Molding Compound.

NEW PRODUCT

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.072 grams (approximate)

Maximum Ratings @T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range

SOT89-3L

3

E

2

C

4

O

P

T

V

CBO

V

CEO

V

EBO

I

C

D

R

JA

θ

T

, T

J

STG

C

1

B

W

E

I

V

Schematic and Pin Configuration

30 V
25 V

6.0 V

2.0 A

1 W

125 °C/W

-55 to +150 °C

C

O

1

E

S

A

B

O

R

T

L

L

C

E

2,4

3

E

T

I

M

T

E

R

Electrical Characteristics @T

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)

DC Current Gain
Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product
Output Capacitance

SWITCHING CHARACTERISTICS
Turn On Time
Storage Time
Fall Time

Notes: 1. No purposefully added lead.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31240 Rev. 2 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

Characteristic Symbol Min Typ Max Unit Test Conditions

= 25°C unless otherwise specified

A

1 of 4

30
25

6.0

⎯ ⎯

⎯ ⎯

200

65

⎯
⎯

⎯

⎯

⎯

⎯

⎯

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(SAT)

V

BE(SAT)

f

T

C

obo

t

on

t

stg

t

f

www.diodes.com

⎯ ⎯

⎯ ⎯

⎯ ⎯

100 nA
100 nA

⎯
⎯

0.12 0.4 V

0.9 1.2 V

300

16

70

170

25

400

⎯

⎯
⎯

⎯

⎯

⎯

V

I

= 10μA, IE = 0

C

V

I

= 1mA, IB = 0

C

V

I

= 10μA, IC = 0

C

V

= 20V, IE = 0

CB

VEB = 4.0V, IC = 0

= 2.0V, IC = 0.1A

V

CE

⎯

V

= 2.0V, IC = 1.5A

CE

I

= 1.5A, IB = 75mA

C

IC = 1.5A, IB = 75mA

= 10V, IC = 50mA,

V

CE

MHz

f = 100MHz

pF

V

= 10V, IE = 0, f = 1MHz

CB

ns
ns
ns

= 12V, VBE = 5V,

V

CE

= IB2 = 25mA, IC = 500mA

I

B1

2DD1621T

© Diodes Incorporated

P, P

OWER

P

TIO

1.0

3.0

0.8

N (W)
A

0.6

DISSI

0.4

D

0.2

R = 125°C/W

NEW PRODUCT

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

Ambie nt Temperat ure (Note 3)

600

500

T = 150°C

A

400

T = 85°C

A

300

θ

JA

100 125

75

Fig. 1 Power Dissipation vs.

V = 2V

CE

150

2.5

2.0

1.5

1.0

0.5

0

0.3

I/I = 20

0.25

CB

0.2

0.15

T = 25°C

A

200

100

T = -55°C

A

0

0.001 0.01 0.1 1 10

V = 2V

CE

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

T = 150°C

0.1

0.05

0

0.001 0.01 0.1 1 10

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 20

CB

0.001 0.01 0.1 1 10

DS31240 Rev. 2 - 2

2 of 4

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0.001 0.01 0.1 1 10

2DD1621T

© Diodes Incorporated