Diodes 2DC4617QLP User Manual
Features
• Ultra-Small Leadless Surface Mount Package
• Complementary PNP Type Available (2DA1774QLP)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free, "Green" Device (Note 2)
• Qualified to AEC-Q101Standards for High Reliability
DFN1006-3
Bottom View
2DC4617QLP
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0008 grams (approximate)
C
B
E
Device Symbol
B
C
E
Top View
Device Schematic
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DC4617QLP-7 8D 7 8 3,000
2DC4617QLP-7B 8D 7 8 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2DC4617QLP
Document number: DS31439 Rev. 4 - 2
2DC4617QLP-7 2DC4617QLP-7B
8D8D
Top View
Dot Denotes
Collector Side
Top View
Bar Denotes Base
and Emitter Side
1 of 5
www.diodes.com
8D = Product Type Marking Code
February 2011
© Diodes Incorporated
θ
(BR)
(BR)
(BR)
)
2DC4617QLP
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Collector Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
50 V
50 V
5.0 V
100 mA
200 mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
250 mW
500
-55 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
I
CBO
I
EBO
CBO
CEO
EBO
⎯
50
50
5.0
⎯
⎯
⎯
100
5
⎯
100 nA
V
V
V
nA
μA
IC = 50μA, IE = 0
IC = 1.0mA, IB = 0
IE = 50μA, IC = 0
= 30V
V
CB
= 30V, TA = 150°C
V
CB
V
= 4.0V
EB
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
h
V
CE(SAT
FE
120 270
⎯
⎯ VCE = 6.0V, IC = 1.0mA
0.2 V
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 4. Part mounted on FR-4 PCB with recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
C
⎯
obo
f
T
100
3.5 pF
⎯
MHz
VCB = 12V, f = 1.0MHz, IE = 0
V
CE
f = 100MHz
= 12V, IC = 2.0mA,
2DC4617QLP
Document number: DS31439 Rev. 4 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
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