Diodes 2DC4617QLP User Manual

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Features

• Ultra-Small Leadless Surface Mount Package

• Complementary PNP Type Available (2DA1774QLP)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free, "Green" Device (Note 2)

• Qualified to AEC-Q101Standards for High Reliability

DFN1006-3

Bottom View

2DC4617QLP

50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0008 grams (approximate)

Device Symbol

Top View

Device Schematic

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

2DC4617QLP-7 8D 7 8 3,000

2DC4617QLP-7B 8D 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

2DC4617QLP

Document number: DS31439 Rev. 4 - 2

2DC4617QLP-7 2DC4617QLP-7B

8D8D

Top View

Dot Denotes

Collector Side

Top View

Bar Denotes Base

and Emitter Side

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8D = Product Type Marking Code

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(BR)

)

2DC4617QLP

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current

CBO

CEO

EBO

50 V 50 V

5.0 V 100 mA 200 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range

, T

STG

250 mW 500

-55 to +150

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage

Collector Cutoff Current Emitter Cutoff Current

V V V

CBO

EBO

CBO CEO EBO

⎯

50 50

5.0

⎯ ⎯ ⎯

100

⎯

100 nA

V V V

nA μA

IC = 50μA, IE = 0 IC = 1.0mA, IB = 0 IE = 50μA, IC = 0

= 30V

= 30V, TA = 150°C

= 4.0V

ON CHARACTERISTICS (Note 5)

DC Current Gain Collector-Emitter Saturation Voltage

CE(SAT

120 270

⎯

⎯ VCE = 6.0V, IC = 1.0mA

0.2 V

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Current Gain-Bandwidth Product

Notes: 4. Part mounted on FR-4 PCB with recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

⎯

obo

100

3.5 pF ⎯

MHz

VCB = 12V, f = 1.0MHz, IE = 0 V

f = 100MHz

= 12V, IC = 2.0mA,

2DC4617QLP

Document number: DS31439 Rev. 4 - 2

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P, P

OWER

TIO

CTO

R CUR

C CUR

REN

T GAIN

CTO

TER

TER TUR

N VOLT

2DC4617QLP

300

250

N (mW)

200

100

(mA) EN

I = 0.5mA

I = 0.4mA

I = 0.3mA

150

DISSI

100

R = 500 C/W

0 255075100125150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve

400

LLE

012 345

V , COLLECTOR-EMIT TER VOLTAGE (V)

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

0.4

I/I = 10

I = 0.2mA

I = 0.1mA

300

-EMI

0.3

200

LLE

100

h, D

0.1 1 10 100 1,000

I , COLLECTOR CURRENT (mA)

Typical DC Current Gain

Fig. 3

vs. Collector Current

1.2

0.2

SATURATION VO LTAGE (V)

0.1

CE(SAT)

0.1 1 10 100 1,000

I , COLLECTOR CURRENT (mA)

Typical Collector-Emitter Saturation Voltage

Fig. 4

vs. Collecto r Cu r re nt

1.2

T = 150ºC

T = 85ºC

T = -55ºC

T = 25ºC

E (V) A

1.0

0.8

0.6

0.4

0.2

BE(ON)

V , BASE-EMI

0.1 1 10 100 1,000

I , COLLECTOR CURRENT (mA)

Ty pi cal Base-E mitter Turn-On Voltage

Fig. 5

vs. Collector Current

1.0

0.8

T = -55°C

0.6

T = 25°C

T = 85°C

0.4

BE(SAT)

V , BASE-EMITTER

SATURATION VOLT AGE (V)

0.2

T = 150°C

0.1 1 10 100 I , COLLECTOR CURRENT (mA)

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

I/I = 10

1,000

2DC4617QLP

Document number: DS31439 Rev. 4 - 2

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Package Outline Dimensions

Suggested Pad Layout

2DC4617QLP

Document number: DS31439 Rev. 4 - 2

2DC4617QLP

DFN1006-3

Dim Min Max Typ

A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50

D 0.95 1.075 1.00

L1L3

Dimensions Value (in mm)

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E 0.55 0.675 0.60

⎯ ⎯

L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3

⎯ ⎯

All Dimensions in mm

Z 1.1 G1 0.3 G2 0.2

X 0.7 X1 0.25

Y 0.4

C 0.7

0.35

0.40

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2DC4617QLP

Document number: DS31439 Rev. 4 - 2

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February 2011