Diodes 2DB1714 User Manual

θ

θ

(BR)

(BR)

(BR)

)

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Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Complementary NPN Type (2DD2679) Available

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

NEW PRODUCT

Maximum Ratings @T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current

Characteristic Symbol Value Unit

Top View

= 25°C unless otherwise specified

A

L

L

C

E

C

O

2,4

1

E

S

A

B

3

E

T

I

M

T

Device Schematic

2DB1714

LOW V

PNP SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT89-3L

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072 grams (approximate)

O

R

T

3

E

2

4

C

E

R

V

CBO

V

CEO

V

EBO

I

CM

I

C

O

P

T

Pin Out Configuration

C

1

B

W

E

I

V

-30 V

-30 V

-6 V

-4 A

-2 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range

Electrical Characteristics @T

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Current Gain-Bandwidth Product

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Device mounted on FR-4 PCB with 1 inch

5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

2DB1714

Document number: DS31610 Rev. 2 - 2

Characteristic Symbol Min Typ Max Unit Conditions

A

T

= 25°C unless otherwise specified

V
V
V

I
I

V

CE(SAT

C

2

copper pad layout.

CBO
EBO

h

FE

obo

f

T

CBO
CEO
EBO

-30

-30

-6
⎯ ⎯
⎯ ⎯

⎯ ⎯

270

⎯

⎯

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R

JA

R

JA

, T

J

STG

⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯

16

200

0.9 W

139 °C/W

2 W

62.5 °C/W

-55 to +150 °C

V

I

= -10μA, IE = 0

C

V

I

= -1mA, IB = 0

C

V

I

= -10μA, IC = 0

-0.1

-0.1

μA
μA

-370 mV
680

⎯

⎯

⎯ VCE = -2V, IC = -200mA

pF

MHz

E

V

CB

V

EB

IC = -1.5A, IB = -75mA

V

CB

f = 1MHz
V

CE

f = 100MHz

= -30V, IE = 0
= -6V, IC = 0

= -10V, IE = 0,

= -2V, IC = -100mA,

December 2008

© Diodes Incorporated

P, P

OWER

P

TIO

N

C

O

CTO

R C

URR

T

C

O

CTO

R CUR

REN

T

C CUR

REN

T GAIN

C

O

C

T

O

R

T

TER

T

T

R TUR

N

O

N VOLT

G

2.0

10

2DB1714

NEW PRODUCT

1.6

(A)

(mW)

1

Pw = 100ms

Pw = 10ms

EN

1.2

A

0.1

DISSI

0.8

DC

LLE

D

0.4

1.6

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

150

Fig. 1 Power Dissipation vs.

Ambient Temp er ature

0.01

C

-I ,

0.001

0.1 1 10 100

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

1,000

T = 150°C

A

1.4

T = 25°C

I = -5mA

1.2

(A)

1.0

0.8

B

I = -4mA

B

I = -3mA

B

100

A

T = -55°C

A

T = 85°C

A

0.6

LLE

0.4

C

-I ,

0.2

I = -2mA

B

I = -1mA

B

FE

h, D

V = -2V

CE

0

012345

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 3 Typical Collector Current

vs. Collector-Emitter Voltage

10

I/I = 20

CB

10

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 4 Typical DC Current Gain vs. Collector Current

C

1.2
E (V)
A

1.0

V = -2V

CE

1

0.8

-EMI

LLE

-V ,

VOLTAGE (V)

0.1

0.01

SATURATION

CE(SAT)

0.001
1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 5 Typical Collector-Emitter Saturation Voltage

C

T = 150°C

T = 85°C

A

A

T = 25°C

T = -55°C

A

A

vs. Collector Current

2DB1714

Document number: DS31610 Rev. 2 - 2

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-

T = -55°C

A

0.6

E

T = 25°C

A

0.4

T = 85°C

A

T = 150°C

0.2

A

BE(ON)

0

-V , BASE- EMI
1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter T urn-On Voltage

vs. Collector Current

December 2008

© Diodes Incorporated

2

T

TER

TURATIO

N VOLTAG

C

PACITAN

C

F

GAIN

N

T

H PRODUCT

H

T

R

T T

H

R

R

TANC

NEW PRODUCT

2DB1714

1.

E (V)

I = 20

/I

CB

1,000

f = 1MHz

1.0

0.8

T = -55°C

A

)

100

E (p

C

ibo

0.6

T = 25°C

A

SA

T = 85°C

0.4

A

T = 150°C

A

0.2

0

1 10 100 1,000 10,000

BE(SAT)

-V , BASE-EMI

-I , COLLECTOR CURRENT (mA)

C

Fig. 7 Typical Base-Emitter Saturation Voltage

vs. Collector Current

1,000

A

10

1

0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 8 Typical Capacitance Characteristics

C

obo

z)
(M

100

DWID

10

-BA

V = -2V

T

f,

CE

f = 100MHz

1

0102030405060708090100

I , COLLECTOR CURRENT (mA)

C

Fig. 9 Typical Gain-Bandwidth Product

vs. Collector Current

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL
E

0.01

ANSIEN

r(t),

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *

θ

JA

R = 128°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

Fig. 10 Transient Thermal Response

2DB1714

Document number: DS31610 Rev. 2 - 2

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December 2008

© Diodes Incorporated

2DB1714

Ordering Information (Note 6)

Part Number Case Packaging

2DB1714-13 SOT89-3L 2500/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

YWW

1714

1714 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52

Package Outline Dimensions

NEW PRODUCT

D1

E

B1

B

8

°

(

4

X

)

D

0

0

2

.

0

R

C

SOT89-3L

Dim Min Max Typ

A 1.40 1.60 1.50
B 0.45 0.55 0.50

H

B1 0.37 0.47 0.42

C 0.35 0.43 0.38
D 4.40 4.60 4.50

L

e

D1 1.50 1.70 1.60

E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10

A

L 0.90 1.20 1.05
All Dimensions in mm

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

X3

X1

Dimensions Value (in mm)

Y1

X1 1.7
X2 0.9
X3 0.4
Y1 2.7
Y2 1.3
Y3 1.9

Y3

X2

Y2

C 3.0

C

IMPORTANT NOTICE

LIFE SUPPORT

2DB1714

Document number: DS31610 Rev. 2 - 2

4 of 4

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December 2008

© Diodes Incorporated