Diodes 2DB1714 User Manual
θ
θ
(BR)
(BR)
(BR)
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Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary NPN Type (2DD2679) Available
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Characteristic Symbol Value Unit
Top View
= 25°C unless otherwise specified
A
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
Device Schematic
2DB1714
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
O
R
T
3
E
2
4
C
E
R
V
CBO
V
CEO
V
EBO
I
CM
I
C
O
P
T
Pin Out Configuration
C
1
B
W
E
I
V
-30 V
-30 V
-6 V
-4 A
-2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DB1714
Document number: DS31610 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
T
= 25°C unless otherwise specified
V
V
V
I
I
V
CE(SAT
C
2
copper pad layout.
CBO
EBO
h
FE
obo
f
T
CBO
CEO
EBO
-30
-30
-6
⎯ ⎯
⎯ ⎯
⎯ ⎯
270
⎯
⎯
1 of 4
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R
JA
R
JA
, T
J
STG
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
16
200
0.9 W
139 °C/W
2 W
62.5 °C/W
-55 to +150 °C
V
I
= -10μA, IE = 0
C
V
I
= -1mA, IB = 0
C
V
I
= -10μA, IC = 0
-0.1
-0.1
μA
μA
-370 mV
680
⎯
⎯
⎯ VCE = -2V, IC = -200mA
pF
MHz
E
V
CB
V
EB
IC = -1.5A, IB = -75mA
V
CB
f = 1MHz
V
CE
f = 100MHz
= -30V, IE = 0
= -6V, IC = 0
= -10V, IE = 0,
= -2V, IC = -100mA,
December 2008
© Diodes Incorporated
P, P
OWER
P
TIO
N
C
O
CTO
R C
URR
T
C
O
CTO
R CUR
REN
T
C CUR
REN
T GAIN
C
O
C
T
O
R
T
TER
T
T
R TUR
N
O
N VOLT
G
2.0
10
2DB1714
NEW PRODUCT
1.6
(A)
(mW)
1
Pw = 100ms
Pw = 10ms
EN
1.2
A
0.1
DISSI
0.8
DC
LLE
D
0.4
1.6
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
Fig. 1 Power Dissipation vs.
Ambient Temp er ature
0.01
C
-I ,
0.001
0.1 1 10 100
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
1,000
T = 150°C
A
1.4
T = 25°C
I = -5mA
1.2
(A)
1.0
0.8
B
I = -4mA
B
I = -3mA
B
100
A
T = -55°C
A
T = 85°C
A
0.6
LLE
0.4
C
-I ,
0.2
I = -2mA
B
I = -1mA
B
FE
h, D
V = -2V
CE
0
012345
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
10
I/I = 20
CB
10
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
C
1.2
E (V)
A
1.0
V = -2V
CE
1
0.8
-EMI
LLE
-V ,
VOLTAGE (V)
0.1
0.01
SATURATION
CE(SAT)
0.001
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
C
T = 150°C
T = 85°C
A
A
T = 25°C
T = -55°C
A
A
vs. Collector Current
2DB1714
Document number: DS31610 Rev. 2 - 2
2 of 4
www.diodes.com
-
T = -55°C
A
0.6
E
T = 25°C
A
0.4
T = 85°C
A
T = 150°C
0.2
A
BE(ON)
0
-V , BASE- EMI
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter T urn-On Voltage
vs. Collector Current
December 2008
© Diodes Incorporated
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