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Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary NPN Type Available (2DD2678)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Characteristic Symbol Value Unit
Top View
= 25°C unless otherwise specified
A
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
Device Schematic
2DB1713
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
O
R
T
3
E
2
4
C
E
R
V
CBO
V
CEO
V
EBO
I
CM
I
C
O
P
T
Pin Out Configuration
C
1
B
W
E
I
V
-15 V
-12 V
-6 V
-6 A
-3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DB1713
Document number: DS31634 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
T
= 25°C unless otherwise specified
V
V
V
I
CBO
I
EBO
V
CE(SAT
h
C
2
copper pad layout.
f
FE
obo
T
CBO
CEO
EBO
-15
-12
-6
⎯ ⎯
⎯ ⎯
⎯
270
⎯
⎯
1 of 4
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R
JA
R
JA
, T
J
STG
-55 to +150 °C
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.1
-0.1
-120 -250 mV
⎯
40
180
680
⎯
⎯
0.9 W
139 °C/W
2 W
62.5 °C/W
V
I
= -10μA, IE = 0
C
V
I
= -1mA, IB = 0
C
V
I
= -10μA, IC = 0
E
μA
μA
= -15V, IE = 0
V
CB
= -6V, IC = 0
V
EB
IC = -1.5A, IB = -30mA
⎯ VCE = -2V, IC = -500mA
V
= -10V, IE = 0,
pF
MHz
CB
f = 1MHz
V
= -2V, IC = -100mA,
CE
f = 100MHz
December 2008
© Diodes Incorporated

NEW PRODUCT
2DB1713
2.0
1.6
1.2
Note 4
3.0
2.5
(A)
2.0
1.5
I = -5mA
B
I = -4mA
B
I = -3mA
B
0.8
I = -2mA
B
I = -1mA
B
D
0.4
P , POWER DIS SIPATION (W)
Note 3
0
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation vs. Ambient Temperature
10,000
°
V = -2V
CE
1.0
LLE
C
-I ,
0.5
0
012345
-V , COLLECTOR-EMITTER VOLT AGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
I/I = 20
CB
1,000
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
100
FE
h, D
10
1 10 100 1,000 10,000
Fig. 3 Typical DC Current Gain vs. Collector Current
-I , COLLECTOR CURRENT (mA)
C
1.2
E (V)
A
N V
N-
E
1.0
0.8
0.6
0.4
0.2
V = -2V
CE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 150°C
0.1
-EMI
VOLTAGE (V)
LLE
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.01
SATURATION
CE(SAT)
-V ,
0.001
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
I = 20
/I
CB
E (V)
A
1.0
V
0.8
I
T = -55°C
A
0.6
T = 25°C
A
SA
E
T = 85°C
A
0.4
T = 150°C
A
0.2
BE(ON)
0
-V , BASE-EMI
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
1 10 100 1,000 10,000
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1713
Document number: DS31634 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated

1,000
f = 1MHz
)
E (p
C
100
ibo
C
obo
10
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typica l C apacitan ce Charact er i st ics
NEW PRODUCT
Ordering Information (Note 6)
Part Number Case Packaging
2DB1713-13 SOT89-3L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1,000
z)
(M
100
D
10
AIN-BANDWID
T
f,
V = -2V
CE
f = 100MHz
1
0102030405060708090100
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Ban dwidth Product
vs. Collector Current
2DB1713
Marking Information
YWW
1713
1713 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
D1
E
B1
B
8
°
(
4
X
)
D
2DB1713
Document number: DS31634 Rev. 2 - 2
0
0
2
.
0
R
C
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
H
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
L
e
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
A
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L 0.90 1.20 1.05
All Dimensions in mm
December 2008
© Diodes Incorporated

2DB1713
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
NEW PRODUCT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
X3
X1
Dimensions Value (in mm)
Y1
X2
Y3
C
Y2
IMPORTANT NOTICE
LIFE SUPPORT
X1 1.7
X2 0.9
X3 0.4
Y1 2.7
Y2 1.3
Y3 1.9
C 3.0
2DB1713
Document number: DS31634 Rev. 2 - 2
4 of 4
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December 2008
© Diodes Incorporated