Diodes 2DB1697 User Manual

R

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Complementary NPN Type Available (2DD2661)

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

NEW PRODUCT

SOT89

Top View

12V LOW V

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, "Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

• Weight: 0.052 grams (approximate)

COLLECTOR

2, 4

1

BASE

3

EMITTE

Device Schematic

2DB1697

PNP SURFACE MOUNT TRANSISTOR

CE(sat)

UL Flammability Classification Rating 94V-0

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

3

E

2

4

C

Top View

Pin Out Configuration

C
B

1

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

2DB1697-13 1697 13 12 2500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. For packaging details, go to our website at http://www.diodes.com.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

YWW

1697

1697 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code (01 – 53)

2DB1697

Document number: DS31618 Rev. 3 - 2

1 of 5

www.diodes.com

April 2012

© Diodes Incorporated

θ

θ

(BR)

(BR)

(BR)

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current

Thermal Characteristics @T

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)

NEW PRODUCT

Operating and Storage Temperature Range

= 25°C unless otherwise specified

A

2DB1697

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

D

R

JA

P

D

R

JA

, T

T

J

STG

-15 V

-12 V

-6 V

-4 A

-2 A

0.9 W

139 °C/W

2 W

62.5 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current

V

CBO

V

CEO

V

EBO

I

⎯ ⎯

CBO

I

EBO

ON CHARACTERISTICS (Note 6)
Collector-Emitter Saturation Voltage
DC Current Gain

V

CE(SAT

h

FE

SMALL SIGNAL CHARACTERISTICS
Output Capacitance

Current Gain-Bandwidth Product

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.

5. Device mounted on FR-4 PCB with 1 inch

6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

2

copper pad layout.

C

⎯

obo

f

⎯

T

-15

-12

-6

⎯ ⎯

⎯

270

⎯ ⎯
⎯ ⎯
⎯ ⎯

-0.1

-0.1

V
V
V

μA
μA

-65 -180 mV
⎯

40

140

680

⎯

⎯

⎯

pF

MHz

I

= -100μA, IE = 0

C

I

= -10mA, IB = 0

C

I

= -100μA, IC = 0

E

= -15V, IE = 0

V

CB

V

= -6V, IC = 0

EB

= -1A, IB = -50mA

I

C

VCE = -2V, IC = -200mA

= -10V, IE = 0,

V

CB

f = 1MHz

= -2V, IC = -100mA,

V

CE

f = 100MHz

2DB1697

Document number: DS31618 Rev. 3 - 2

2 of 5

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April 2012

© Diodes Incorporated

C

O

CTO

R

C

U

R

R

T

C CUR

REN

T GAIN

C

O

CTO

R

T

TER

2

T

T

R

TUR

O

OLT

G

2

T

TER

TURAT

O

O

TAG

NEW PRODUCT

2.0

1.6

1.2

0.8

D

P , POWER DISSI PATION (W)

0.4

0

25 50 75 100 125 150

0

T , AMBIENT TEMPERATURE ( C)

A

Fig. 1 Power Dissipation vs. Ambient Temperature

10,000

Note 4

Note 5

°

V = -4V

CE

2DB1697

2.0

1.8

1.6

(A)

1.4

EN

1.2

1.0

0.8

LLE

0.6

0.4

C

-I ,

0.2
0

01 2 34

-V , COLLECTOR-EMIT TER VOLTAGE (V)

CE

1

Fig. 2 Typical Collector Current

vs. Collector-Emitter Volta ge

I/I = 20

CB

I = -5mA

B

I = -4mA

B

I = -3mA

B

I = -2mA

B

I = -1mA

B

T = 150°C

A

1,000

T = 85°C

A

T = 25°C

A

FE

h, D

T = -55°C

A

100

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

C

1.

V = -4V

E (V)
A

N V
N-

E

1.0

0.8

0.6

0.4

0.2

CE

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

T = 150°C

-EMI

LLE

0.1

VOLTAGE (V)

T = 85°C

A

A

T = 25°C

A

T = -55°C

A

0.01

SATURATION

CE(SAT)

-V ,

0.001
1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

1.

I = 20

/I

CB

E (V)

1.0

L

N V

0.8

I

T = -55°C

A

0.6

T = 25°C

A

SA

T = 85°C

A

0.4

T = 150°C

A

0.2

BE(ON)

0

-V , BASE-EMI

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collect or Current

0

1 10 100 1,000 10,000

BE(SAT)

-V , BASE-EMI

-I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

2DB1697

Document number: DS31618 Rev. 3 - 2

3 of 5

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April 2012

© Diodes Incorporated

CAPAC

T

C

F

GAIN

N

T

H

PRODUCT

H

2DB1697

1,000

f = 1MHz

1,000

z)
(M

)

100

E (p

100

AN
I

10

0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

C

ibo

C

obo

Fig. 7 Typical Capacitance Characteristics

DWID

10

-BA

V = -2V

V = -2V

CE

CE

f = 100MHz

T

f,

f = 100MHz

1

0102030405060708090100

-I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Gain-Bandwidth Product

vs. Collector Current

NEW PRODUCT

Package Outline Dimensions

D1

E

B1

B

8

°

e1

(

4

X

)

D

0

0

2

.

0

R

C

SOT89

Dim Min Max

A 1.40 1.60
B 0.44 0.62

H

B1 0.35 0.54

C 0.35 0.43
D 4.40 4.60

L

e

D1 1.52 1.83

E 2.29 2.60
e 1.50 Typ

e1 3.00 Typ

H 3.94 4.25

A

L 0.89 1.20
All Dimensions in mm

Suggested Pad Layout

X1

Y3

Y

X2 (2x)

Y1

Y4

Y2

C

X (3x)

2DB1697

Document number: DS31618 Rev. 3 - 2

www.diodes.com

Dimensions Value (in mm)

X 0.900
X1 1.733
X2 0.416

Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125

C 1.500

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April 2012

© Diodes Incorporated

NEW PRODUCT

IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perfor m when properly used in accordance with instructions for use provided i n
the labeling can be reasonably expected to result in significant injury to the user.

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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or
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Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety­critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

2DB1697

2DB1697

Document number: DS31618 Rev. 3 - 2

5 of 5

www.diodes.com

April 2012

© Diodes Incorporated