Diodes 2DB1697 User Manual

R

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Complementary NPN Type Available (2DD2661)

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

NEW PRODUCT

SOT89

Top View

12V LOW V

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, "Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

• Weight: 0.052 grams (approximate)

COLLECTOR

2, 4

1

BASE

3

EMITTE

Device Schematic

2DB1697

PNP SURFACE MOUNT TRANSISTOR

CE(sat)

UL Flammability Classification Rating 94V-0

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

3

E

2

4

C

Top View

Pin Out Configuration

C
B

1

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

2DB1697-13 1697 13 12 2500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. For packaging details, go to our website at http://www.diodes.com.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

YWW

1697

1697 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code (01 – 53)

2DB1697

Document number: DS31618 Rev. 3 - 2

1 of 5

www.diodes.com

April 2012

© Diodes Incorporated

θ

θ

(BR)

(BR)

(BR)

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current

Thermal Characteristics @T

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)

NEW PRODUCT

Operating and Storage Temperature Range

= 25°C unless otherwise specified

A

2DB1697

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

D

R

JA

P

D

R

JA

, T

T

J

STG

-15 V

-12 V

-6 V

-4 A

-2 A

0.9 W

139 °C/W

2 W

62.5 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current

V

CBO

V

CEO

V

EBO

I

⎯ ⎯

CBO

I

EBO

ON CHARACTERISTICS (Note 6)
Collector-Emitter Saturation Voltage
DC Current Gain

V

CE(SAT

h

FE

SMALL SIGNAL CHARACTERISTICS
Output Capacitance

Current Gain-Bandwidth Product

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.

5. Device mounted on FR-4 PCB with 1 inch

6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

2

copper pad layout.

C

⎯

obo

f

⎯

T

-15

-12

-6

⎯ ⎯

⎯

270

⎯ ⎯
⎯ ⎯
⎯ ⎯

-0.1

-0.1

V
V
V

μA
μA

-65 -180 mV
⎯

40

140

680

⎯

⎯

⎯

pF

MHz

I

= -100μA, IE = 0

C

I

= -10mA, IB = 0

C

I

= -100μA, IC = 0

E

= -15V, IE = 0

V

CB

V

= -6V, IC = 0

EB

= -1A, IB = -50mA

I

C

VCE = -2V, IC = -200mA

= -10V, IE = 0,

V

CB

f = 1MHz

= -2V, IC = -100mA,

V

CE

f = 100MHz

2DB1697

Document number: DS31618 Rev. 3 - 2

2 of 5

www.diodes.com

April 2012

© Diodes Incorporated