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Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Low Power Amplification and Switching
• Complementary NPN Type Available (2DD2656)
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Top View
2DB1694
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
I
C
I
CM
E
-30 V
-30 V
-6 V
-1 A
-2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DB1694
Document number: DS31640 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
= 25°C unless otherwise specified
V
V
V
I
CBO
I
EBO
V
CE(SAT
h
C
2
copper pad layout.
f
FE
obo
T
CBO
CEO
EBO
-30
-30
-6
⎯ ⎯
⎯ ⎯
⎯
270
⎯
⎯
1 of 4
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R
JA
R
JA
, T
T
J
STG
-55 to +150
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.1
-0.1
-180 -380 mV
⎯
16
300
680
⎯
⎯
300 mW
417
°C/W
500 mW
250
°C/W
°C
V
I
= -10μA, IE = 0
C
V
I
= -1mA, IB = 0
C
V
I
= -10μA, IC = 0
E
μA
μA
⎯
pF
MHz
= -30V, IE = 0
V
CB
= -6V, IC = 0
V
EB
I
= -500mA, IB = -25mA
C
VCE = -2V, IC = -100mA
= -10V, IE = 0,
V
CB
f = 1MHz
V
= -2V, IC = -100mA,
CE
f = 100MHz
December 2008
© Diodes Incorporated

NEW PRODUCT
2DB1694
0.6
0.5
(W)
0.4
A
0.3
(Note 4)
DISSI
1.0
0.9
0.8
(A)
0.7
0.6
0.5
I = -5mA
B
I = -4mA
B
I = -3mA
B
I = -2mA
B
0.4
(Note 3)
0.2
D
0.1
LLE
0.3
C
0.2
-I ,
I = -1mA
B
0.1
0
0
25
50
T , AMBIENT TEMPERATURE (°C)
75 100 125
A
Fig. 1 Power Dissip ation vs. Ambi ent Temperatur e
1,000
T = 85°C
A
T = 25°C
A
T = 150°C
A
150
175
V = -2V
CE
200
0
012345
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
I/I = 20
CB
AIN
T = -55°C
A
100
FE
h, D
10
0.1 1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.
V = -2V
E (V)
A
1.0
L
CE
V
0.8
-
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
-EMI
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
LLE
CE(SAT)
VOLTAGE (V)
SATURATION
0.1
-V ,
0.01
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collect or Current
1.
I = 20
E (V)
A
N V
I
1.0
0.8
/I
CB
T = -55°C
A
0.6
SA
T = 25°C
0.4
A
T = 85°C
A
E
0.2
T = 150°C
A
BE(ON)
0
-V , BASE-EMI
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Curr ent
0.2
T = 150°C
A
0
0.1 1 10 100 1,000
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1694
Document number: DS31640 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated

1,000
f = 1MHz
)
100
NEW PRODUCT
E (p
10
1
0.1 1 10 100
V , REVERSE VOLT AGE (V)
Fig. 7 Typical Capa citance Characte r is ti cs
R
C
ibo
C
obo
Ordering Information (Note 6)
Part Number Case Packaging
2DB1694-7 SOT-323 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
2DB1694
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
RP1
RP1 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Package Outline Dimensions
K
J
2DB1694
Document number: DS31640 Rev. 2 - 2
A
Dim Min Max Typ
C
B
G
H
M
D
L
3 of 4
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SOT-323
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11
0° 8° -
α
All Dimensions in mm
December 2008
© Diodes Incorporated

Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
NEW PRODUCT
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Y
Dimensions Value (in mm)
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0
2DB1694
2DB1694
Document number: DS31640 Rev. 2 - 2
4 of 4
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December 2008
© Diodes Incorporated