Diodes 2DB1694 User Manual
θ
θ
(BR)
(BR)
(BR)
)
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Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Low Power Amplification and Switching
• Complementary NPN Type Available (2DD2656)
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
NEW PRODUCT
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Top View
2DB1694
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
C
B
Device Schematic
V
CBO
V
CEO
V
EBO
I
C
I
CM
E
-30 V
-30 V
-6 V
-1 A
-2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_fre e/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DB1694
Document number: DS31640 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Conditions
A
= 25°C unless otherwise specified
V
V
V
I
CBO
I
EBO
V
CE(SAT
h
C
2
copper pad layout.
f
FE
obo
T
CBO
CEO
EBO
-30
-30
-6
⎯ ⎯
⎯ ⎯
⎯
270
⎯
⎯
1 of 4
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R
JA
R
JA
, T
T
J
STG
-55 to +150
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.1
-0.1
-180 -380 mV
⎯
16
300
680
⎯
⎯
300 mW
417
°C/W
500 mW
250
°C/W
°C
V
I
= -10μA, IE = 0
C
V
I
= -1mA, IB = 0
C
V
I
= -10μA, IC = 0
E
μA
μA
⎯
pF
MHz
= -30V, IE = 0
V
CB
= -6V, IC = 0
V
EB
I
= -500mA, IB = -25mA
C
VCE = -2V, IC = -100mA
= -10V, IE = 0,
V
CB
f = 1MHz
V
= -2V, IC = -100mA,
CE
f = 100MHz
December 2008
© Diodes Incorporated
P, P
OWER
P
TIO
N
C
O
CTO
R C
U
R
RENT
C CUR
RENT G
C
O
CTO
R
T
TER
T
TER T
U
R
N
O
N
O
T
G
2
2
T
T
R
TURAT
O
OLT
G
NEW PRODUCT
2DB1694
0.6
0.5
(W)
0.4
A
0.3
(Note 4)
DISSI
1.0
0.9
0.8
(A)
0.7
0.6
0.5
I = -5mA
B
I = -4mA
B
I = -3mA
B
I = -2mA
B
0.4
(Note 3)
0.2
D
0.1
LLE
0.3
C
0.2
-I ,
I = -1mA
B
0.1
0
0
25
50
T , AMBIENT TEMPERATURE (°C)
75 100 125
A
Fig. 1 Power Dissip ation vs. Ambi ent Temperatur e
1,000
T = 85°C
A
T = 25°C
A
T = 150°C
A
150
175
V = -2V
CE
200
0
012345
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
I/I = 20
CB
AIN
T = -55°C
A
100
FE
h, D
10
0.1 1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.
V = -2V
E (V)
A
1.0
L
CE
V
0.8
-
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
-EMI
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
LLE
CE(SAT)
VOLTAGE (V)
SATURATION
0.1
-V ,
0.01
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collect or Current
1.
I = 20
E (V)
A
N V
I
1.0
0.8
/I
CB
T = -55°C
A
0.6
SA
T = 25°C
0.4
A
T = 85°C
A
E
0.2
T = 150°C
A
BE(ON)
0
-V , BASE-EMI
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Curr ent
0.2
T = 150°C
A
0
0.1 1 10 100 1,000
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1694
Document number: DS31640 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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