Diodes 2DB1424R User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (2DD2150)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
NEW PRODUCT
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
2DB1424R
PNP SURFACE MOUNT TRANSISTOR
SOT89-3L
O
R
T
L
L
C
E
C
O
3
E
2
4
C
O
P
T
C
1
B
W
E
I
V
Schematic and Pin Configuration
B
2,4
1
E
S
A
3
E
T
I
M
T
E
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31329 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic Symbol Min Typ Max Unit Conditions
= 25°C unless otherwise specified
A
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
C
obo
f
T
www.diodes.com
-20
-20
-6
⎯ ⎯
⎯ ⎯
⎯
180
⎯
⎯
1 of 4
V
CBO
V
CEO
V
EBO
I
CM
I
C
D
R
JA
θ
T
, T
J
STG
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.1
-0.1
-0.18 -0.5 V
⎯
28
220
390
⎯
⎯
-20 V
-20 V
-6 V
-5 A
-3 A
1 W
125 °C/W
-55 to +150 °C
V
I
= -50μA, IE = 0
C
V
I
= -1mA, IB = 0
C
V
I
= -50μA, IC = 0
μA
μA
⎯ V
pF
MHz
E
V
= -20V, IE = 0
CB
V
= -5V, IC = 0
EB
I
= -2A, IB = -0.1A
C
= -2V, IC = -0.1A
CE
= -10V, IE = 0,
V
CB
f = 1MHz
= -2V, IE = 0.1A,
V
CE
f = 100MHz
© Diodes Incorporated
2DB1424R
P, P
OWER
PATIO
1.0
2.0
0.8
N (W)
0.6
DISSI
0.4
D
0.2
NEW PRODUCT
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
500
T = 150°C
400
A
T = 85°C
A
300
T = 25°C
A
200
T = -55°C
100
A
0
0.001 0.01 0.1 1 10
R = 125°C/W
θ
JA
100 125
75
Fig. 1 Power Dissipation vs.
Ambie nt Temperature (No t e 3)
V = -2V
CE
150
1.6
1.2
0.8
0.4
0
0.6
0.5
I/I = 20
CB
0.4
0.3
0.2
0.1
0
0.001 0.01 0.1 1 10
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = -2V
CE
T = -55°C
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
0.001 0.01 0.1 1 10
DS31329 Rev. 2 - 2
2 of 4
www.diodes.com
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 20
CB
0.001 0.01 0.1 1 10
© Diodes Incorporated
2DB1424R
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