Diodes 2DB1386Q-R User Manual
C
Features
BV
I
Low saturation voltage V
Complementary NPN Type: 2DD2098
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> -20V
CEO
= -5A high Continuous Current
C
CE(sat)
SOT89
Top View
< -1V @ -4A
B
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
Weight: 0.052 grams (approximate)
E
Device Symbol
2DB1386Q/R
20V PNP MEDIUM POWER TRANSISTOR IN SOT89
MIL-STD-202, Method 208
E
C
Pin Out – Top View
C
B
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
2DB1386Q-13 KP3Q 13 12 2,500
2DB1386Q-13R KP3Q 13 12 4,000
2DB1386R-13 KP3R 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
<1000ppm antimony compounds.
Marking Information
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
YWW
KP3x
www.diodes.com
KP3x = Product Type Marking Code,
where: KP3Q = 2DB1386Q
KP3R = 2DB1386R
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)
1 of 6
February 2013
© Diodes Incorporated
Maximum Ratings (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Thermal Characteristics (@T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
P
D
R
JA
R
θJL
T
, T
J
STG
-30 V
-20 V
-6 V
-5 A
-10 A
-500 mA
1 W
125 °C/W
19 °C/W
-55 to +150 °C
2DB1386Q/R
Thermal Characteristics and Derating Information
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
100
Single Pulse. T
10
amb
=25°C
Thermal Resistance (°C/W)
120
100
80
D=0.5
60
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
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