Diodes 2DB1386Q-R User Manual

Page 1
C
Features
BV
I
Low saturation voltage V
Complementary NPN Type: 2DD2098
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> -20V
CEO
= -5A high Continuous Current
C
CE(sat)
SOT89
Top View
< -1V @ -4A
B
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
Weight: 0.052 grams (approximate)
E
Device Symbol
2DB1386Q/R
20V PNP MEDIUM POWER TRANSISTOR IN SOT89
MIL-STD-202, Method 208
E
C
Pin Out – Top View
C
B
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
2DB1386Q-13 KP3Q 13 12 2,500
2DB1386Q-13R KP3Q 13 12 4,000
2DB1386R-13 KP3R 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
Marking Information
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
YWW
KP3x
www.diodes.com
KP3x = Product Type Marking Code, where: KP3Q = 2DB1386Q KP3R = 2DB1386R YWW = Date Code Marking Y = Last digit of year (ex: 7 = 2007) WW = Week code (01 – 53)
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Maximum Ratings (@T
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current
Thermal Characteristics (@T
Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
P
D
R
JA
R
θJL
T
, T
J
STG
-30 V
-20 V
-6 V
-5 A
-10 A
-500 mA
1 W
125 °C/W
19 °C/W
-55 to +150 °C
2DB1386Q/R
Thermal Characteristics and Derating Information
1.0
0.8
0.6
0.4
0.2
0.0 0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
100
Single Pulse. T
10
amb
=25°C
Thermal Resistance (°C/W)
120
100
80
D=0.5
60
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
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)
C
CUR
RENT G
C
O
CTO
R CUR
RENT
Electrical Characteristics (@T
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 7) Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS Output Capacitance
Current Gain-Bandwidth Product
Notes: 7. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
= +25°C, unless otherwise specified.)
A
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
 
EBO
V
2DB1386Q 2DB1386R 180
CE(SAT
h
FE
C
obo
f

T
-30
-20
-6
-0.25 -1.0 V
120
   
-0.5
-0.5
 
270 390
55
100

V V V
A A
pF
MHz
2DB1386Q/R
IC = -50µA, IE = 0 IC = -1mA, IB = 0 IE = -50µA, IC = 0 VCB = -20V, IE = 0 VEB = -5V, IC = 0
IC = -4A, IB = -0.1A
IC = -0.5A, VCE = -2V
VCB = -20V, IE = 0, f = 1MHz
= -6V, IE = 50mA,
V
CE
f = 30MHz
Typical Electrical Characteristics (@T
400
V = -2V
350
T = 150°C
A
300
T = 85°C
A
AIN
250
T = 25°C
200
A
150
, D
FE
100
T = -55°C
h
A
50
0
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 1 Typical DC Current Gain
vs. Collector Current (2DB1386Q)
CE
= +25°C, unless otherwise specified.)
A
2.0
1.8
1.6
(A)
1.4
1.2
1.0
0.8
LLE
0.6
C
0.4
-I ,
0.2
0
-V , COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 2 Typical Coll ector Current
vs. Collector-Emitter Voltage
I = -10mA
B
I = -8mA
B
I = -6mA
B
I = -4mA
B
I = -2mA
B
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
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C
OLLECTOR E
MIT
T
E
R
A
S
E EMITTE
R TUR
T
A
E
A
M
R
A
R
A
A
C, OUTPU
T CAPACITANC
A
A
T
P
R
C
T
Typical Electrical Characteristics (cont.)
0.4
0.3
0.2
0.1
SATURATION VOLTAGE (V)
CE(SAT)
-V ,
0
0.0001 0.001 0.01 0.1 1 10
1.2
GE(V)
1.0
I/I = 40
CB
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
-I , COLLECTOR CURRENT (A)
C
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
2DB1386Q/R
1.2
(V) G
N-ON VOL
BE(ON)
V, B
1,000
V = -2V
CE
1.0
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
0.2
T = 150°C
A
0
0.0001 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)
C
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.8
TION VOLT
T = -55°C
A
TU
0.6
S
T = 25°C
A
0.4
ITTE
T = 85°C
A
SE E
T = 150°C
0.2
A
0
BE(SAT)
0.0001 0.001 0.01 0.1 1 10
V, B
I , COLLECTOR CURRENT (A)
C
I/I = 40
CB
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
120
100
ODU
80
H
60
NDWID
40
IN-B
V = -6V
T
f, G
20
CE
f = 30MHz
E (pF)
100
ob
10
V , REVERSE VOLTAGE (V)
Figure 6 Typical Output Capacitance Characteristics
R
0
020406080100120
-I , COLLECTOR CURRENT
C
Figure 7 Typical Gain-Bandwidth Product
vs. Collector Current
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
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Page 5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
B1
D1
8° (4X)
D
0
0
2
.
0
R
1
H
L
B
e
A
C
Dim Min Max
H
B1 0.35 0.54
D1 1.62 1.83
H1 2.63 2.93
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y3
Y
X (3x)
X1
X2 (2x)
Y2
Dimensions Value (in mm)
X 0.900
X1 1.733
Y1
Y4
C
X2 0.416
Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125
C 1.500
2DB1386Q/R
SOT89
A 1.40 1.60 B 0.44 0.62
C 0.35 0.44 D 4.40 4.60
E 2.29 2.60 e 1.50 Typ H 3.94 4.25
L 0.89 1.20 All Dimensions in mm
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
2DB1386Q/R
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
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