Diodes 2DB1188P-Q-R User Manual

R

C

Features

 BV

 I

 Low saturation voltage V

 Complementary NPN Type: 2DD1766

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

> -32V

CEO

= -2A high Continuous Current

C

CE(sat)

< 800mV @ 2A

SOT89

B

Top View

Mechanical Data

 Case: SOT89

 Case material: Molded Plastic, "Green" Molding Compound.

 UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin Plated Leads, Solderable per

 Weight: 0.052 grams (approximate)

E

Device Symbol

2DB1188P/Q/

32V PNP MEDIUM POWER TRANSISTOR IN SOT89

MIL-STD-202, Method 208

E

C

Pin Out – Top View

C

B

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

2DB1188P-13 P23P 13 12 2,500
2DB1188Q-13 P23Q 13 12 2,500

2DB1188Q-13R P23Q 13 12 4,000

2DB1188R-13 P23R 13 12 2,500

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.

<1000ppm antimony compounds.

Marking Information

P23x = Product Type Marking Code
Where P23P = 2DB1188P
P23Q = 2DB1188Q
P23R = 2DB1188R

= Manufacturers’ code marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 1 = 2011)
WW = Week Code (01 – 53)

2DB1188P/Q/R

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2DB1188P/Q/

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

-40 V

-32 V

-6 V

-2 A

-3 A

-500 mA

Thermal Characteristics (@T

= +25°C unless otherwise specified.)

A

Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

P

D

R

θJA

R

θJL

T

, T

J

STG

1 W

125 °C/W

19 °C/W

-55 to +150 °C

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Thermal Characteristics and Derating Information

V

CE(sat)

Limited

1

DC

1s

100ms

100m

15x15mm 1oz

Single Pul se

T

=25°C

Collector Current (A)

C

10m

-I

amb

100m 1 10

10ms

1ms

100µs

-VCE Collector-Emitter Voltage (V)

Safe Operating Area

15x15mm 1oz

120

T

=25°C

80

60

amb

D=0.5

100

2DB1188P/Q/

1.0

0.8

0.6

0.4

0.2

0.0
0 20406080100120140160

Max Power Dissipation (W)

Temperature (°C)

15x15mm 1oz

Derating Curve

100

15x15mm 1oz

Single Pul se

T

=25°C

amb

10

40

D=0.2

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

140.0

T

amb

120.0

100.0

80.0

60.0

40.0

Thermal Resistance (°C/W)

0 500 1000 1500 2000 2500

1oz copper

2oz copper

Copper Area (sqmm)

RTH vs Area

=25°C

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

3

2oz copper

2

1oz copper

1

T

Maximum Power (W)

=25°C

amb

0

0 500 1000 1500 2000 2500

Copper Area (sqmm)

vs Area

P

D

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)

C

O

CTO

R CUR

REN

T

C CUR

RENT G

C

O

C

T

O

R

T

T

R

T

T

R TURN-O

OLT

G

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

BV
BV
BV

I

CBO

I

EBO

CBO

CEO

EBO

ON CHARACTERISTICS (Note 7)

Collector-Emitter Saturation Voltage

V

CE(sat



2DB1188P

DC Current Gain

2DB1188Q 120 270

h

FE

2DB1188R 180 390

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Output Capacitance

Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

f



T

C

obo

1.4

I = -10mA

1.2

(A)

1.0

0.8

0.6

LLE

B

I = -8mA

B

I = -6mA

B

I = -4mA

B

0.4

C

-I ,

I = -2mA

B

0.2

-40

-32

-6

 
 

-0.35 -0.8 V

82

120



350

300

250

AIN

200

150

100

FE

h, D

 
 
 

-100 nA

-100 nA

180





20



T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

50

V

IC = -100µA, IE = 0

V

IC = -10mA, IB = 0

V

IE = -100µA, IC = 0
VCB = -20V, IE = 0
VEB = - 5V, IC = 0

IC = -2A, IB = -0.2A



V

= -3V, IC = -0.5A

CE

= -5V, IC = -0.1A,

V

MHz

CE

f = 30MHz

pF

VCB = -10V, f = 1MHz

2DB1188P/Q/

V = -3V

CE

0

012 3 45

-V , COLLECTOR EMITTER VOLTAGE (V)

CE

Figure 1. Typical Collector Current

vs. Collector-Emitter Voltage

0.6

I/I = 10

0.5

CB

E

0.4

EMI

0.3

LLE

T = 150°C

A

0.2

T = 25°C

SATURATION VOLTAGE (V)

CE(SAT)

0.1

-V ,

0

0.0001 0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

T = 85°C

A

A

T = -55°C

A

Figure 3. Typical Collector-Emitter Saturati on Voltage

vs. Collector Current

2DB1188P/Q/R

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0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

Figure 2. Typical DC Current Gain

vs. Collector Current (2DB1188Q)

1.2
E (V)
A

1.0

V = -3V

CE

N V

0.8

T = -55°C

A

0.6
E

T = 25°C

A

0.4

T = 85°C

A

T = 150°C

0.2

A

BE(ON)

-V , BASE EMI

0

0.0001 0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

Figure 4. Typical Base-Emitter Turn-On Voltage

vs. Collector Current

February 2013

© Diodes Incorporated

R

T

T

R

T

U

RAT

O

OLTAG

C

OUT

PUT CAPACIT

C

GAIN

N

T

H PRODUCT

H

1.2

E(V)

1.0

N V
I

0.8

T = -55°C

A

0.6

SA

T = 25°C

A

E

0.4

T = 85°C

A

E (pF)

AN

60

50

40

30

20

2DB1188P/Q/

f = 1MHz

,

T = 150°C

A

0.2

0

BE(SAT)

0.0001 0.001 0.01 0.1 1 10

-V , BASE EMI

-I , COLLECTOR CURRENT (A)

C

I/I = 10

CB

Figure 5. Typical Base-Emitter Saturation Voltage

obo

10

0

0.01 0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Figure 6. Typical Output Capacitance Characterist ics

vs. Collector Current

140

z)

120

(M

100

80

60

DWID

40

-BA

20

T

f,

0

0 102030405060 708090100

I , Emitter Current (mA)

E

Figure 7. Typical Gain-Bandwidth Product vs. Emitter Current

2DB1188P/Q/R

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

E

B1

D1

8° (4X)

D

0

0

2

.

0

R

1

H

L

B

e

A

C

Dim Min Max

H

B1 0.35 0.54

D1 1.62 1.83

H1 2.63 2.93

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y3

Y

X (3x)

X1

X2 (2x)

Y2

Dimensions Value (in mm)

X 0.900

Y1

Y4

C

X1 1.733
X2 0.416

Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125

C 1.500

2DB1188P/Q/

SOT89

A 1.40 1.60
B 0.44 0.62

C 0.35 0.44
D 4.40 4.60

E 2.29 2.60
e 1.50 Typ
H 3.94 4.25

L 0.89 1.20
All Dimensions in mm

2DB1188P/Q/R

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2DB1188P/Q/

2DB1188P/Q/R

Document number: DS31144 Rev. 7 - 2

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February 2013

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