Diodes 2DB1188P-Q-R User Manual
R
C
Features
BV
I
Low saturation voltage V
Complementary NPN Type: 2DD1766
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> -32V
CEO
= -2A high Continuous Current
C
CE(sat)
< 800mV @ 2A
SOT89
B
Top View
Mechanical Data
Case: SOT89
Case material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
Weight: 0.052 grams (approximate)
E
Device Symbol
2DB1188P/Q/
32V PNP MEDIUM POWER TRANSISTOR IN SOT89
MIL-STD-202, Method 208
E
C
Pin Out – Top View
C
B
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
2DB1188P-13 P23P 13 12 2,500
2DB1188Q-13 P23Q 13 12 2,500
2DB1188Q-13R P23Q 13 12 4,000
2DB1188R-13 P23R 13 12 2,500
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
<1000ppm antimony compounds.
Marking Information
P23x = Product Type Marking Code
Where P23P = 2DB1188P
P23Q = 2DB1188Q
P23R = 2DB1188R
= Manufacturers’ code marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 1 = 2011)
WW = Week Code (01 – 53)
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
1 of 7
www.diodes.com
February 2013
© Diodes Incorporated
R
2DB1188P/Q/
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
-40 V
-32 V
-6 V
-2 A
-3 A
-500 mA
Thermal Characteristics (@T
= +25°C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
P
D
R
θJA
R
θJL
T
, T
J
STG
1 W
125 °C/W
19 °C/W
-55 to +150 °C
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
2 of 7
www.diodes.com
February 2013
© Diodes Incorporated
R
Thermal Characteristics and Derating Information
V
CE(sat)
Limited
1
DC
1s
100ms
100m
15x15mm 1oz
Single Pul se
T
=25°C
Collector Current (A)
C
10m
-I
amb
100m 1 10
10ms
1ms
100µs
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
15x15mm 1oz
120
T
=25°C
80
60
amb
D=0.5
100
2DB1188P/Q/
1.0
0.8
0.6
0.4
0.2
0.0
0 20406080100120140160
Max Power Dissipation (W)
Temperature (°C)
15x15mm 1oz
Derating Curve
100
15x15mm 1oz
Single Pul se
T
=25°C
amb
10
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
140.0
T
amb
120.0
100.0
80.0
60.0
40.0
Thermal Resistance (°C/W)
0 500 1000 1500 2000 2500
1oz copper
2oz copper
Copper Area (sqmm)
RTH vs Area
=25°C
1
Maximum Power (W)
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
3
2oz copper
2
1oz copper
1
T
Maximum Power (W)
=25°C
amb
0
0 500 1000 1500 2000 2500
Copper Area (sqmm)
vs Area
P
D
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
3 of 7
www.diodes.com
February 2013
© Diodes Incorporated
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