Diodes 2DB1184Q User Manual

C

Features

• BV

• I

• I

• Epitaxial Planar Die Construction

• Low Collector-Emitter Saturation Voltage

• Ideal for Medium Power Switching or Amplification Applications

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> -50V

CEO

= -3A High Continuous Collector Current

C

= -4.5A Peak Pulse Current

CM

TO252 (DPAK)

Top View

B

Ordering Information (Note 4)

50V PNP MEDIUM POWER TRANSISTOR IN TO252

Mechanical Data

• Case: TO252 (DPAK)

• Case Material: Molded Plastic, "Green" Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-

• Weight: 0.34 grams (approximate)

C

B

E

E

Device Schematic

UL Flammability Classification Rating 94V-0

e3

STD-202, Method 208

Pin Out Configuration

Top view

2DB1184Q

Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel

2DB1184Q-13 AEC-Q101 2DB1184Q 13 16 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

YYWW

2DB1184Q

2DB1184Q = Product Type Marking Code

= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 14 = 2014)
WW = Week Code 01-52

2DB1184Q

Document number: DS31504 Rev. 5 - 2

1 of 6

www.diodes.com

May 2014

© Diodes Incorporated

T

R

T T

H

R

R

T

C

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Collector Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

Power Dissipation @TL = +25°C

(Note 6)

Thermal Resistance, Junction to Lead (Note 5)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

ESD Ratings (Note 7)

2DB1184Q

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

D

PD

R

θJA

R

θJL

T

, T

J

STG

-60 V

-50 V

-5 V

-3 A

-4.5 A

1.2 W

15 W

104 °C/W

8.3 °C/W

-55 to +150 °C

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM 4000 V 3A

Electrostatic Discharge - Machine Model ESD MM 400 V C

Note: 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided

1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.

6. Thermal resistance from junction to solder-point (on the exposed collector pad).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristics

1

E

AN

ESIS

MAL
E

ANSIEN

r(t),

2DB1184Q

Document number: DS31504 Rev. 5 - 2

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

R (t) = r(t) *

θ

JA

R = 110°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.01

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)

1

Figure 1 Transient Thermal Response

2 of 6

www.diodes.com

May 2014

© Diodes Incorporated

C

O

C

TOR

C

U

R

RENT

C C

U

R

R

T G

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

BV

BV

BV

I

CBO

I

EBO

CBO

CEO

EBO

ON CHARACTERISTICS (Note 8)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

V

CE(sat)

V

BE(sat)

h

FE

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Output Capacitance

Turn-On Time

Delay Time

Rise Time

Turn-Off Time

Storage Time

Fall Time

Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

f

T

C

obo

t

on

t

d

t

r

t

off

t

s

t

f

1,000

800

(mA)

600

I = -5mA

B

I = -4mA

B

I = -3mA

B

400

LLE

200

C

-I ,

I = -2mA

B

I = -1mA

B

-60 — — V

-50 — — V

-5 — — V

— — -1 µA

— — -1 µA

— — -1 V

— — -1.2 V

120 — 270 —

— 110 — MHz

— 26 — pF

IC = -50µA, IE = 0

IC = -1mA, IB = 0

IE = -50µA, IC = 0

VCB = -40V, IE = 0

VEB = - 4V, IC = 0

IC = -2A, IB = -0.2A

IC = -1.5A, IB = -0.15A

VCE = -3V, IC = -0.5A

V
f = 30MHz

VCB = -10V, f = 1MHz

— 109 — ns

— 60 — ns

— 49 — ns

— 280 — ns

V
I
I

— 246 — ns

— 34 — ns

400

V = -3V

CE

350

T = 150°C

A

300

AIN

250

EN

T = 125°C

A

T = 85°C

A

200

T = 25°C

A

T = -55°C

A

FE

h, D

150

100

50

2DB1184Q

= -5V, IC = -0.1A,

CE

= 30V

CC

= 150mA

CC

= - I

B1

= 15mA

B2

0

0.1 1 10

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Figure 2 Typical Collector Current vs. Collector-Emitter Voltage

2DB1184Q

Document number: DS31504 Rev. 5 - 2

3 of 6

www.diodes.com

0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

Figure 3 Typical DC Current Gain vs. Collector Current

May 2014

© Diodes Incorporated

C

O

CTO

R

T

TER

T

TER TUR

N-O

N VOLTAG

T

TER

TURATIO

N VOLTAG

CAPACITAN

C

G

N

N

DWID

H P

ROD

U

C

M

H

C

O

C

TOR

C

U

R

R

N

T

0.4

I/I = 10

CB

1.2

E (V)

V = -3V

CE

1.0

2DB1184Q

0.3

-EMI

0.2

LLE

0.1

SATURATION VOLTAGE (V)

CE(SAT)

T = 150°C

A

T = 125°C

A

-V ,

T = -55°C

A

0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

Figure 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

1.2

E (V)

I/I = 10

CB

T = 85°C

A

T = 25°C

A

0.8

T = -55°C

A

0.6

T = 25°C

A

T = 85°C

0.4

A

T = 125°C

T = 150°C

A

0.2

BE(ON)

0

-V , BASE-EMI

0.001 0.01 0.1 1 10

A

-I , COLLECTOR CURRENT (A)

C

Figure 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

1,000

f = 1MHz

1.0

0.8

0.6

SA

0.4

T = -55°C

A

T = 25°C

A

T = 150°C

A

T = 125°C

A

T = 85°C

A

0.2

0

0.001 0.01 0.1 1 10

BE(SAT)

-V , BASE-EMI

-I , COLLECTOR CURRENT (A)

C

Figure 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

140

z)

120

V = -5V

CE

f = 30MHz

T (

100

80

T

60

C

ibo

E (pF)

100

C

obo

10

0.1 1 10 100
V , REVERSE VOLTAGE (V)

Figure 7 Typical Capacitance Characteristics

R

10

Pw = 100µs (mA)

(A)

E

1

Pw = 100ms (mA)

Pw = 10ms (mA)

Pw = 1ms (mA)

DC (mA)

0.1

40

-BA

AI

20

T

f,

0

0102030405060708090100

I , COLLECTOR CURRENT (mA)

C

Figure 8 Typical Gain-B andwidth Product vs. Collector Current

2DB1184Q

Document number: DS31504 Rev. 5 - 2

4 of 6

www.diodes.com

LLE

C

I,

T = 25°C

A

Single Non-repetitive Pulse

0.01

0.1 1 10 100

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Figure 9 Safe Operating Area (Note 3)

May 2014

© Diodes Incorporated

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

L

3

E

b

3

7°±1°

A

c

2

D

A

L

2

4

H

e

b

2︵2

E

1

b︵3

x

x

︶

︶

8
0
5

.

Gauge Plane

D

1

0

a

L

2.74REF

1
A

Seating Plane

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

1

Y

2

Y

X

1

Dimensions Value (in mm)

C

X

2DB1184Q

TO252 (DPAK)

Dim Min Max Typ

A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07

b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531

D 6.00 6.20 6.10

D1 5.21 - -

e - - 2.286

E 6.45 6.70 6.58
E1 4.32 - -

H 9.40 10.41 9.91

L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83

a 0° 10° -

All Dimensions in mm

C 4.572
X 1.060

X1 5.632

Y 2.600
Y1 5.700
Y2 10.700

2DB1184Q

Document number: DS31504 Rev. 5 - 2

5 of 6

www.diodes.com

May 2014

© Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

2DB1184Q

2DB1184Q

Document number: DS31504 Rev. 5 - 2

6 of 6

www.diodes.com

May 2014

© Diodes Incorporated