Features
• BV
• I
• I
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
> -50V
CEO
= -3A High Continuous Collector Current
C
= -4.5A Peak Pulse Current
CM
TO252 (DPAK)
Top View
B
Ordering Information (Note 4)
50V PNP MEDIUM POWER TRANSISTOR IN TO252
Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, "Green" Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-
• Weight: 0.34 grams (approximate)
C
B
E
E
Device Schematic
UL Flammability Classification Rating 94V-0
e3
STD-202, Method 208
Pin Out Configuration
Top view
2DB1184Q
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
2DB1184Q-13 AEC-Q101 2DB1184Q 13 16 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
2DB1184Q
2DB1184Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 14 = 2014)
WW = Week Code 01-52
2DB1184Q
Document number: DS31504 Rev. 5 - 2
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© Diodes Incorporated
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Power Dissipation @TL = +25°C
(Note 6)
Thermal Resistance, Junction to Lead (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
ESD Ratings (Note 7)
2DB1184Q
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
PD
R
θJA
R
θJL
T
, T
J
STG
-60 V
-50 V
-5 V
-3 A
-4.5 A
1.2 W
15 W
104 °C/W
8.3 °C/W
-55 to +150 °C
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Note: 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics
1
E
AN
ESIS
MAL
E
ANSIEN
r(t),
2DB1184Q
Document number: DS31504 Rev. 5 - 2
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
R (t) = r(t) *
θ
JA
R = 110°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.01
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)
1
Figure 1 Transient Thermal Response
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© Diodes Incorporated