Diodes 2DB1182Q User Manual

Features

• Epitaxial Planar Die Construction

• Low Collector-Emitter Saturation Voltage

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

TO252

Top View

B

Device Schematic

2DB1182Q

32V PNP SURFACE MOUNT TRANSISTOR IN TO252

Mechanical Data

• Case: TO252

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin, Solderable per MIL-STD-202,

Method 208

• Weight: 0.34 grams (approximate)

C

E

Pin Out Configuration

Top view

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

2DB1182Q-13 2DB1182Q 13 16 2,500

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

YYWW

2DB1182Q

2DB1182Q = Product Type Marking Code

= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 08 = 2008)
WW = Week Code (01 - 53)

2DB1182Q

Document number: DS35651 Rev. 1 - 2

1 of 5

www.diodes.com

November 2011

© Diodes Incorporated

)

C

O

CTO

R CUR

REN

T

C

C

URR

T

G

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Power Dissipation
Operating and Storage Temperature Range

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

BV

CBO

BV

CEO

BV

EBO

I

⎯ ⎯

CBO

I

⎯ ⎯

EBO

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage
DC Current Gain

V

CE(sat

h

FE

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product
Output Capacitance

Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.

f

⎯

T

C

obo

1,000

800

(mA)

600

I = -5mA

B

I = -4mA

B

I = -3mA

B

400

LLE

200

C

-I ,

I = -2mA

B

I = -1mA

B

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

D

T

, T

J

STG

-40

-32

-5

⎯ ⎯

120

⎯

400

350

300

AIN

250

EN

200

150

FE

h, D

100

⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯

110

26

V = -3V

CE

50

-40 V

-32 V

-5 V

-2 A

-3 A

10 W

-55 to +150 °C

V

IC = -50μA, IE = 0

V

IC = -1mA, IB = 0

V

IE = -50μA, IC = 0

-1

-1

-0.8 V
270

⎯
⎯

μA
μA

= -20V, IE = 0

V

CB

= - 4V, IC = 0

V

EB

IC = -2A, IB = -0.2A

⎯

VCE = -3V, IC = -0.5A

= -5V, IC = -0.1A,

V

MHz

CE

f = 30MHz

pF

VCB = -10V, f = 1MHz

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

2DB1182Q

0

0.1 1 10

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage

0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

Fig. 2 Typical DC Current Gain vs. Collector Current

C

2DB1182Q

Document number: DS35651 Rev. 1 - 2

2 of 5

www.diodes.com

November 2011

© Diodes Incorporated