Page 1
Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Voltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
TO252
Top View
B
Device Schematic
2DB1182Q
32V PNP SURFACE MOUNT TRANSISTOR IN TO252
Mechanical Data
• Case: TO252
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin, Solderable per MIL-STD-202,
Method 208
• Weight: 0.34 grams (approximate)
C
E
Pin Out Configuration
Top view
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DB1182Q-13 2DB1182Q 13 16 2,500
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YYWW
2DB1182Q
2DB1182Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 08 = 2008)
WW = Week Code (01 - 53)
2DB1182Q
Document number: DS35651 Rev. 1 - 2
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November 2011
© Diodes Incorporated
Page 2
)
C
O
CTO
R CUR
REN
T
C
C
URR
T
G
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
BV
CBO
BV
CEO
BV
EBO
I
⎯ ⎯
CBO
I
⎯ ⎯
EBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
V
CE(sat
h
FE
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
f
⎯
T
C
obo
1,000
800
(mA)
600
I = -5mA
B
I = -4mA
B
I = -3mA
B
400
LLE
200
C
-I ,
I = -2mA
B
I = -1mA
B
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
, T
J
STG
-40
-32
-5
⎯ ⎯
120
⎯
400
350
300
AIN
250
EN
200
150
FE
h, D
100
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
110
26
V = -3V
CE
50
-40 V
-32 V
-5 V
-2 A
-3 A
10 W
-55 to +150 °C
V
IC = -50μA, IE = 0
V
IC = -1mA, IB = 0
V
IE = -50μA, IC = 0
-1
-1
-0.8 V
270
⎯
⎯
μA
μA
= -20V, IE = 0
V
CB
= - 4V, IC = 0
V
EB
IC = -2A, IB = -0.2A
⎯
VCE = -3V, IC = -0.5A
= -5V, IC = -0.1A,
V
MHz
CE
f = 30MHz
pF
VCB = -10V, f = 1MHz
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
2DB1182Q
0
0.1 1 10
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage
0
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
2DB1182Q
Document number: DS35651 Rev. 1 - 2
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Page 3
C
O
CTO
R
T
TER
T
TER T
U
R
O
OLTAG
T
TER
TURATIO
OLTAG
2DB1182Q
0.4
I/I = 10
CB
1.2
E (V)
V = -3V
CE
1.0
0.3
N V
-EMI
0.2
LLE
CE(SAT)
0.1
SATURATION VOLTAGE (V)
T = 150°C
A
T = 125°C
A
-V ,
T = -55°C
A
0
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Curr ent
1.2
E (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
0.8
N-
T = -55°C
A
0.6
T = 25°C
A
T = 85°C
0.4
A
T = 125°C
T = 150°C
A
0.2
BE(ON)
0
-V , BASE-EMI
0.001 0.01 0.1 1 10
A
-I , COLLECTOR CURRENT (A)
C
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
1.0
N V
SA
0.8
0.6
0.4
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
0.2
0
0.001 0.01 0.1 1 10
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collect or Current
140
V = -5V
120
CE
f = 30MHz
100
80
60
C
ibo
100
CAPACITANCE (pF)
C
obo
10
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 6 Typical Capacitance Characteristics
40
20
T
f , GAIN-BANDWIDTH PRODUCT (MHz)
0
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
2DB1182Q
Document number: DS35651 Rev. 1 - 2
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Page 4
Package Outline Dimensions
E
b3
L3
D
H
L4
2X b2
e
3X b
Suggested Pad Layout
X2
Y2
Y1
2DB1182Q
Dim Min Max Typ
A
c2
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
A2
E1
c2 0.45 0.58 0.531
D1 5.21
A1
L
a
E1 4.32
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
Dimensions Value (in mm)
Z 11.6
X1 1.5
Z
C
X2 7.0
Y1 2.5
Y2 7.0
C 6.9
E1 2.3
TO252
A 2.19 2.39 2.29
b 0.64 0.88 0.783
D 6.00 6.20 6.10
− −
e
− −
2.286
E 6.45 6.70 6.58
− −
H 9.40 10.41 9.91
L 1.40 1.78 1.59
a 0° 10°
−
All Dimensions in mm
2DB1182Q
Document number: DS35651 Rev. 1 - 2
X1
E1
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
2DB1182Q
2DB1182Q
Document number: DS35651 Rev. 1 - 2
5 of 5
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November 2011
© Diodes Incorporated
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