Page 1
C
ECB
Features
BV
I
Complementary NPN Type: 2DD1664
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> -32V
CEO
= -1A high Continuous Collector Current
C
SOT89
Top View
B
2DB1132P/Q/R
32V PNP POWER SWITCHING TRANSISTOR IN SOT-89
Mechanical Data
Case: SOT89
Case material: molded Plastic. “Green” molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
C
E
Device Symbol
Pin Out
Top View
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DB1132P-13 P13P 13 12 2,500
2DB1132Q-13 P13Q 13 12 2,500
2DB1132R-13 P13R 13 12 2,500
2DB1132R-13R P13R 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
<1000ppm antimony compounds.
Marking Information
(Top View)
P13x
YWW
P13x = Product Type Marking Code:
Where P13P = 2DB1132P
P13Q = 2DB1132Q
P13R = 2DB1132R
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
1 of 6
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December 2013
© Diodes Incorporated
Page 2
Absolute Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 5)
Power Dissipation
(Note 6) 1.5
(Note 7) 2.0
(Note 5)
Thermal Resistance, Junction to Ambient Air
(Note 6) 83
(Note 7) 60
Thermal Resistance, Junction to Lead (Note 8)
Operating and Storage Temperature Range
ESD Ratings (Note 9)
2DB1132P/Q/R
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
R
θJA
R
θJL
T
J, TSTG
-40 V
-32 V
-5 V
-1 A
-2 A
1
W
125
°C/W
22 °C/W
-55 to +150 °C
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
under still air conditions whilst operating in a steady-state.
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2 of 6
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December 2013
© Diodes Incorporated
Page 3
Thermal Characteristics and Derating Information
140.0
120.0
T
amb
=25°C
100.0
80.0
1oz copper
60.0
40.0
Thermal Resistance (°C/W)
0 500 1000 1500 2000 2500
Copper Area (sqmm)
1.0
2oz copper
2DB1132P/Q/R
3
2oz copper
2
1oz copper
1
Maximum Power (W)
T
=25°C
amb
0
0 500 1000 1500 2000 2500
Copper Area (sqmm)
120
0.8
0.6
0.4
0.2
0.0
0 255075100125150
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
100
Single Pulse. T
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
amb
=25°C
100
80
D=0.5
60
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
3 of 6
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December 2013
© Diodes Incorporated
Page 4
)
2DB1132P/Q/R
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer
Ratio (Note 10)
2DB1132P
2DB1132Q 120 270
2DB1132R 180 390
Collector-Emitter saturation Voltage (Note 10)
Transition frequency
Output Capacitance
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
BV
BV
BV
I
I
V
CE(sat
CBO
EBO
h
f
C
CBO
CEO
EBO
FE
T
ob
Typical Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
1.6
1.4
1.2
1.0
0.8
-40
-32
-5
— —
— —
— —
— —
— —
82
—
—
-125 -500 mV
—
—
190 — MHz
12 30 pF
500
T = 150°C
400
T = 85°C
300
T = 25°C
V
V
V
-0.5 µA
-0.5 µA
180
—
A
A
A
IC = -50µA
IC = -1mA
IE = -50µA
V
=-20V
CB
V
= -4V
EB
I
= -100mA, V
C
CE
= -3V
IC =-500mA, IB= -50mA
IE = 50mA, VCE= -5V,f=30MHz
IE = 0A, VCB= -10V,f=1MHz
V = -3V
CE
0.6
0.4
0.2
200
T = -55°C
A
100
0
I/I = 10
CB
T = 150°C
A
T = 25°C
T = 85°C
A
A
T = -55°C
A
0
0.001 0.01 0.1 1 10
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -3V
CE
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
4 of 6
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December 2013
© Diodes Incorporated
Page 5
250
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
2DB1132P/Q/R
40
30
20
10
I/I = 10
CB
0
200
150
100
V = -5V
50
-I , EMITTER CURRENT
Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current
E
CE
f = 30MHz
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
D1
0
0
2
.
0
R
1
H
C
H
B1
8° (4X)
L
B
e
A
D
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
5 of 6
www.diodes.com
Dim Min Max
SOT89
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44
D 4.40 4.60
D1 1.62 1.83
E 2.29 2.60
e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
L 0.89 1.20
All Dimensions in mm
December 2013
© Diodes Incorporated
Page 6
2DB1132P/Q/R
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
Y3
Y
X (3x)
X1
X2 (2x)
Y2
Dimensions Value (in mm)
X 0.900
X1 1.733
Y1
Y4
C
IMPORTANT NOTICE
LIFE SUPPORT
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
6 of 6
www.diodes.com
December 2013
© Diodes Incorporated
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