Diodes 2DB1119S User Manual
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Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
2DB1119S
PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
SOT89-3L
T
O
R
L
L
C
E
C
O
E
3
C
C
4
O
T
V
CBO
V
CEO
V
EBO
I
CM
I
C
D
R
JA
θ
T
, T
j
STG
2
B
1
W
E
I
V
P
Schematic and Pin Configuration
-25 V
-25 V
125 °C/W
-55 to +150 °C
B
-5 V
-2 A
-1 A
1 W
2,4
1
E
S
A
3
E
T
I
M
T
E
R
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 1. No purposefully added lead.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31298 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic Symbol Min Typ Max Unit Conditions
= 25°C unless otherwise specified
A
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
f
T
C
ob
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-25
-25
-5
⎯ ⎯
⎯ ⎯
⎯
⎯
140
40
⎯
⎯
1 of 4
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.1
-0.1
-0.15 -0.7 V
-0.85 -1.2 V
⎯
⎯ ⎯ ⎯
200
12
280
⎯
⎯
V
V
V
μA
μA
⎯
MHz
pF
I
= -10μA, IE = 0
C
I
= -1mA, IB = 0
C
I
= -10μA, IC = 0
E
V
= -20V, IE = 0
CB
V
= -4V, IC = 0
EB
I
= -500mA, IB = -50mA
C
I
= -500mA, IB = -50mA
C
V
= -2V, IC = -50mA
CE
V
= -2V, IC = -1A
CE
= -10V, IC = -50mA
V
CE
f = 100MHz
= -10V, IE = 0,
V
CB
f = 1MHz
2DB1119S
© Diodes Incorporated
P
P
OWER
P
T
O
1.0
1.2
NEW PRODUCT
0.8
N (W)
I
A
0.6
DISSI
1.0
0.8
0.6
0.4
0.4
,
D
0.2
350
0
25 50 75 100 125 150
0
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation
vs. Ambien t T empe rature (Note 3)
°
0.2
0
01 23 45
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.8
300
250
0.6
200
0.4
150
100
0.2
50
0
-I , COLLECTOR CURRENT (A)
C
Fig. 3 Typical DC Current Gain
vs. Collector Current
0
,
-I COLLECTOR CURRENT (A)
C
Fig. 4 Typical Collector-Emitter Saturation
Voltage vs. C ollector Cu r r ent
1
-I COLLECTOR CURRENT (A)
,
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DS31298 Rev. 2 - 2
2 of 4
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-I COLLECTOR CURRENT (A)
,
C
Fig. 6 Typical Base-Emitter Saturation
Voltage vs. Collector Current
2DB1119S
© Diodes Incorporated
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