Diodes 2DA2018 User Manual
y
g
Features
• Low Collector-Emitter Saturation Voltage, V
• Ultra-Small Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
Applications
• DC-DC converter
• Portable equipments
• Power management units
ADVANCE INFORMATION
SOT-523
Top View
CE(sat)
2DA2018
12V LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
B
Device S
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
C
C
E
uration
E
mbol
B
Top View
Pin Confi
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DA2018-7 KTF 7 8mm 3,000
Notes: 1. No purposefully added lead.
3. For packaging details, go to our website at http://www.diodes.com
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2015
Code W X Y Z A B C C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
2DA2018
Document number: DS31823 Rev. 3 - 2
KTF
KTF = Product Type Marking Code
YM
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
1 of 5
www.diodes.com
October 2010
© Diodes Incorporated
θ
P(pk), P
T
RAN
N
T P
OWER
)
T
R
T
T
HER
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
160
140
ADVANCE INFORMATION
120
100
T
100
(W
2DA2018
V
CBO
V
CEO
V
EBO
I
C
I
CM
R
JA
, T
J
STG
80
60
-15 V
-12 V
-6 V
-500 mA
-1 A
150 mW
833
-55 to +150
Single Pulse
R (t) = r(t) *
θ
JA
R = 470°C/W
JA
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
°C/W
R
θθJA
°C
80
60
40
D
P , POWER DISSIPATION (mW)
20
R = 833°C/W
θ
JA
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERA TURE ( C)
A
°
Fig. 1 Pow er D issipation vs. Ambient Temperature
SIE
40
EAK
20
0
0.0001 0.001 0.1 10 1,000
0.01 1 100
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
0.01
ANSIEN
r(t),
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 470°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Fig. 3 Transient Th er m al Response
2DA2018
Document number: DS31823 Rev. 3 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
Loading...