Diodes 2DA2018 User Manual

Page 1
y
g
Features
Low Collector-Emitter Saturation Voltage, V
Ultra-Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD rating: 400V-MM, 8KV-HBM
Applications
DC-DC converter
Portable equipments
Power management units
SOT-523
Top View
CE(sat)
2DA2018
12V LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(sat)
Mechanical Data
B
Device S
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
C
C
E
uration
E
mbol
B
Top View
Pin Confi
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DA2018-7 KTF 7 8mm 3,000
Notes: 1. No purposefully added lead.
3. For packaging details, go to our website at http://www.diodes.com
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2015
Code W X Y Z A B C C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
2DA2018
Document number: DS31823 Rev. 3 - 2
KTF
KTF = Product Type Marking Code
YM
YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)
1 of 5
www.diodes.com
October 2010
© Diodes Incorporated
Page 2
θ
P(pk), P
T
RAN
N
T P
OWER
)
T
R
T
T
HER
R
TANC
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
160
140
120
100
T
100
(W
2DA2018
V
CBO
V
CEO
V
EBO
I
C
I
CM
R
JA
, T
J
STG
80
60
-15 V
-12 V
-6 V
-500 mA
-1 A
150 mW 833
-55 to +150
Single Pulse
R (t) = r(t) *
θ
JA
R = 470°C/W
JA
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
°C/W
R
θθJA
°C
80
60
40
D
P , POWER DISSIPATION (mW)
20
R = 833°C/W
θ
JA
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERA TURE ( C)
A
°
Fig. 1 Pow er D issipation vs. Ambient Temperature
SIE
40
EAK
20
0
0.0001 0.001 0.1 10 1,000
0.01 1 100
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
1
D = 0.7
E
D = 0.5 D = 0.3
ESIS
0.1
D = 0.1
MAL
0.01
ANSIEN
r(t),
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 470°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)
1
Fig. 3 Transient Th er m al Response
2DA2018
Document number: DS31823 Rev. 3 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
Page 3
)
r
C
O
CTO
R CUR
RENT
C CUR
RENT G
C
O
C
TOR
T
T
R
T
T
R
T
U
RN-O
O
T
G
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) Output Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1.2
I = 5mA
1.0
(A)
0.8
0.6
0.4
LLE
C
I,
0.2
B
I = 4mA
B
I = 3mA
B
I = 2mA
B
I = 1mA
B
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat
C
obo
f
T
t
on
t
d
t
t
off
t
s
t
f
-15
-12
-6
⎯ ⎯
270
⎯ ⎯
⎯ ⎯ ⎯ ⎯
-100
-50
-100 nA 680
-250 mV
7.4
260
40 18 22
106
87 19
800
700
600
AIN
500
400
300
FE
h, D
200
100
⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
V V V
nA
μA
pF
MHz
ns ns ns ns ns ns
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
2DA2018
IC = -10μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCB = -15V, IE = 0
= -15V, IE = 0, TA = 150°C
V
CB
V
= -6V, IC = 0
EB
V
= -2V, IC = -10mA
CE
IC = -200mA, IB = -10mA VCB = -10V, f = 1.0MHz VCE = -2V, IC = -10mA, f = 100MHz
= -6V
V
CC
I
= -200mA, IB1 = IB2 = -10mA
C
0
0246810
V , COLLECTOR-EMITTER VOLT AGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0.1
I/I = 10
CB
E
-EMI
VOLTAGE (V)
0.01
LLE
SATURA TION
CE(SAT)
V,
T = 125°C
A
T = 150°C
A
T = -55°C
A
T = 85°C
A
T = 25°C
A
0.001
0.01 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
2DA2018
Document number: DS31823 Rev. 3 - 2
3 of 5
www.diodes.com
0
0.1 1 10 100 1,000 Fig. 5 Typical DC Current Gain vs. Collector Current
I , COLLECTOR CURRENT (mA)
C
1.0
E (V) A
L N V
0.8
V = 2V
CE
T = -55°C
A
0.6
E
T = 25°C
A
0.4
T = 85°C
A
T = 125°C
0.2
T = 150°C
A
BE(ON)
0
V , BASE-EMI
0.01 0.1 1 10 100 1,000 Fig. 7 Typical Base-Emitter Turn-On Voltage
A
I , COLLECTOR CURRENT (mA)
C
vs. Collector Current
October 2010
© Diodes Incorporated
Page 4
T
TER TUR
O
O
TAG
2
T
TER
TURATIO
OLTAG
T
TER
TURATIO
N VOLTAG
CAPACITANC
2DA2018
1.0
E (V)
L N V
N-
0.8
0.6
V = 5V
CE
T = -55°C
A
T = 25°C
A
0.4
T = 85°C
A
T = 125°C
0.2
T = 150°C
A
BE(ON)
0
V , BASE-EMI
A
0.01 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1.2
E (V)
1.0
I = 10
/I
CB
1.
E (V)
I = 20
/I
CB
1.0
N V
0.8
T = -55°C
A
0.6
SA
T = 25°C
0.4
0.2
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0
0.01 0.1 1 10 100 1,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
f = 1MHz
C
ibo
0.8
C
obo
SA
0.6
0.4
0.2
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
E (pF)
10
0
0.01 0.1 1 10 100 1,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 10 Typica l Base-Em it ter Saturation Voltage
vs. Collector Current
1
0.01 0.1 1 10 100 V , REVERSE VOLTAGE (V)
R
Fig. 11 Typical Capacitance Characteristics
Package Outline Dimensions
K
J
2DA2018
Document number: DS31823 Rev. 3 - 2
A
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
C
B
B 0.75 0.85 0.80 C 1.45 1.75 1.60 D
G
H
N
M
G 0.90 1.10 1.00 H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
0.50
M 0.10 0.20 0.12
D
L
N 0.45 0.65 0.50
0° 8°
α
All Dimensions in mm
4 of 5
www.diodes.com
October 2010
© Diodes Incorporated
Page 5
2DA2018
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
Y
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7
2DA2018
Document number: DS31823 Rev. 3 - 2
5 of 5
www.diodes.com
October 2010
© Diodes Incorporated
Loading...