Diodes 2DA1971 User Manual

Page 1
B
Y
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89
Features
• BV
• Max Continuous Current I
• High Gain Holds up h
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
CEO
> -400V
= -0.5A
C
≥ 140 @ IC = -100mA
FE
Applications
• High Voltage Switching
SOT89
Top View
Mechanical Data
• Case: SOT89
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
• Weight: 0.05 grams (Approximate)
C
E
Device symbol
MIL-STD-202, Method 208
C
2DA1971
E
C
B
Top View
Pin Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DA1971-7 1S2 7 12 1,000
2DA1971-13 1S2 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. <1000ppm antimony compounds.
Marking Information
2DA1971
Document number: DS35669 Rev: 2 – 2
WW
1S2
Top View
www.diodes.com
1S2 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 1 = 2011) WW = Week code (01 – 53)
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2DA1971
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
-400 V
-400 V
-7 V
-0.5 A
-1 A
-250 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range
P R R
T
J, TSTG
θJA θJL
D
1.5 W 83
10.4
-55 to +150
ESD Ratings (Note 7)
°C/W °C/W
°C
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2DA1971
Document number: DS35669 Rev: 2 – 2
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Page 3
Thermal Characteristics and Derating information
V
CE(sat)
Limit
1
100m
10m
Collector Curren t (A)
C
1m
-I
100m 1 10 100
DC
Single Pulse. T
25mmX25mm FR4
1oz Cu
1s
amb
100ms
=25°C
10ms
1ms
100µs
-VCE Colle cto r- Emi tte r Vo l tage (V)
1.5
1.0
0.5
0.0
Max Power Dissipation (W)
Safe Operating A rea
80
25mmX25mm FR4 1oz Cu
60
100
2DA1971
25mmX25mm FR4 1oz Cu
0 20406080100120140160
Temperature (°C)
Derating Curve
Single Pulse. T
25mmX25mm FR4
1oz Cu
amb
=25°C
D=0.5
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Puls e Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Po we r Dissipation (W)
Pulse Width (s)
Puls e P o we r Diss ip a t ion
2DA1971
Document number: DS35669 Rev: 2 – 2
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Page 4
)
)
(d)
(r)
(s)
(f)
Electrical Characteristics (@T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 8) Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 8)
Collector-Emitter saturation Voltage (Note 8) Base-Emitter saturation Voltage (Note 8)
Base-Emitter Turn-On Current (Note 8) Transition frequency Collector Output Capacitance
Delay Time Rise Time Storage Time Fall Time
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
= +25°C, unless otherwise specified.)
A
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat
V
BE(on
f
T
C
obo
t
t
t
t
-400 - - V
-400 - - V
-7 - - V
- - -100 nA
- - -100 nA
- - -100 nA
140 140
- -
450
-
400
-250
-400
mV
- -0.75 -0.9 V
- - -0.8 V
- 75 - MHz
- 19 - pF
- 89 - ns
- 111 - ns
- 2165 - ns
- 185 - ns
IC = -100µA IC = -1mA IE = -100µA VCE = -320V VCB = -320V VEB = -6V I
= -20mA, V
C
­I
= -100mA, V
C
I
= -100mA, IB = -10mA
C
I
= -200mA, IB = -40mA
C
IC = -100mA, IB = -10mA IC = -200mA, V I
= -50mA, V
C
f = 50MHz VCB = -10V, IE = 0, f = 1MHz
= -200V, IC = -100mA,
V
CC
I
= -10mA, IB2 = 20mA
B1
2DA1971
= -5V
CE
= -5V
CE
= -10V
CE
= -5V,
CE
2DA1971
Document number: DS35669 Rev: 2 – 2
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Page 5
Typical Electrical Characteristics (@T
1
Tamb=25°C
IC/IB=50
IC/IB=20
(V)
100m
CE(SAT)
v I
IC/IB=5
C
- V
10m
1m 10m 100m 1
- IC Colle c to r C urrent (A)
V
CE(SAT)
= +25°C, unless otherwise specified.)
A
0.5
IC/IB=10
0.4
0.3
IC/IB=10
(V)
0.2
CE(SAT)
- V
0.1
0.0 1m 10m 100m
150°C
100°C
-55°C
- IC Colle c to r Curre nt (A)
V
CE(SAT)
v I
C
2DA1971
25°C
150°C
250
100°C
200
150
25°C
100
-55°C
50
Normalised Gain
0
1m 10m 100m 1
- IC Collector Curre nt (A)
hFE v I
1.0
-55°C
0.8
(V)
- V
25°C
0.6
BE(ON)
100°C
0.4
0.2
150°C
1m 10m 100m
C
- IC Collector Curre nt (A)
V
BE(ON)
v I
C
VCE=-5V
VCE=-5V
1.0
-55°C
0.8
(V)
- V
25°C
0.6
100°C
BE(SAT)
0.4
150°C
0.2 1m 10m 100m
- IC Colle c to r Curre nt (A)
V
BE(SAT)
v I
C
IC/IB=10
2DA1971
Document number: DS35669 Rev: 2 – 2
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Page 6
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
B1
D1
8° (4X)
D
0
0
2
.
0
R
1
H
L
B
e
A
C
Dim Min Max
H
A 1.40 1.60 B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44 D 4.40 4.60
D1 1.62 1.83
E 2.29 2.60
e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
L 0.89 1.20 All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y3
Y
X (3x)
X1
X2 (2x)
Y2
Dimensions Value (in mm)
X 0.900 X1 1.733 X2 0.416
Y1
Y4
C
Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125
C 1.500
2DA1971
SOT89
2DA1971
Document number: DS35669 Rev: 2 – 2
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Page 7
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
2DA1971
2DA1971
Document number: DS35669 Rev: 2 – 2
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