400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89
Features
• BV
• Max Continuous Current I
• High Gain Holds up h
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
CEO
> -400V
= -0.5A
C
≥ 140 @ IC = -100mA
FE
Applications
• High Voltage Switching
SOT89
Top View
Mechanical Data
• Case: SOT89
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
• Weight: 0.05 grams (Approximate)
C
E
Device symbol
MIL-STD-202, Method 208
C
2DA1971
E
C
B
Top View
Pin Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DA1971-7 1S2 7 12 1,000
2DA1971-13 1S2 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
Marking Information
2DA1971
Document number: DS35669 Rev: 2 – 2
WW
1S2
Top View
www.diodes.com
1S2 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 1 = 2011)
WW = Week code (01 – 53)
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2DA1971
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
-400 V
-400 V
-7 V
-0.5 A
-1 A
-250 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
P
R
R
T
J, TSTG
θJA
θJL
D
1.5 W
83
10.4
-55 to +150
ESD Ratings (Note 7)
°C/W
°C/W
°C
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2DA1971
Document number: DS35669 Rev: 2 – 2
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© Diodes Incorporated
Thermal Characteristics and Derating information
V
CE(sat)
Limit
1
100m
10m
Collector Curren t (A)
C
1m
-I
100m 1 10 100
DC
Single Pulse. T
25mmX25mm FR4
1oz Cu
1s
amb
100ms
=25°C
10ms
1ms
100µs
-VCE Colle cto r- Emi tte r Vo l tage (V)
1.5
1.0
0.5
0.0
Max Power Dissipation (W)
Safe Operating A rea
80
25mmX25mm FR4
1oz Cu
60
100
2DA1971
25mmX25mm FR4
1oz Cu
0 20406080100120140160
Temperature (°C)
Derating Curve
Single Pulse. T
25mmX25mm FR4
1oz Cu
amb
=25°C
D=0.5
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Puls e Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Po we r Dissipation (W)
Pulse Width (s)
Puls e P o we r Diss ip a t ion
2DA1971
Document number: DS35669 Rev: 2 – 2
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August 2012
© Diodes Incorporated