Diodes 2DA1774QLP User Manual

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C

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Features

• Ultra-Small Leadless Surface Mount Package

• Complementary NPN Type Available (2DC4617QLP)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free, "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

DFN1006-3

Bottom View

2DA1774QLP

40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0008 grams (approximate)

B

B

C

E

Device S

mbol

Top View

Device Schematic

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

2DA1774QLP-7 8A 7 8 3,000

2DA1774QLP-7B 8A 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

2DA1774QLP-7

8A

Top View

Dot Denotes Collector Side

Ba

2DA1774QLP

Document number: DS31438 Rev. 4 - 2

2DA1774QLP-7B

8A

Top View

Denotes Base and Emitter Side

1 of 4

www.diodes.com

8A = Product Type Marking Code

January 2011

© Diodes Incorporated

θ

(BR)

(BR)

(BR)

)

P

P

OWER

P

T

O

C

O

C

T

O

R CUR

R

T

2DA1774QLP

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Collector Current

V

CBO

V

CEO

V

EBO

I

C

I

CM

-50 V

-40 V

-5.0 V

-100 mA

-200 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation @TA = 25°C (Note 4) PD
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Operating and Storage Temperature Range

R

JA

, T

T

J

STG

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage

Collector Cutoff Current
Emitter Cutoff Current

V
V
V

I

CBO

I

EBO

CBO
CEO
EBO

⎯

-50

-40

-5.0

⎯
⎯
⎯

-100

-5

⎯

-100 nA

ON CHARACTERISTICS (Note 5)

DC Current Gain
Collector-Emitter Saturation Voltage

V

CE(SAT

h

FE

120 270

⎯

-0.2 V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Current Gain-Bandwidth Product

Notes: 4. Part mounted on FR-4 PCB with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

5. Short duration pulse test used to minimize self-heating effect.

C

⎯

obo

f

T

100

5.0 pF
⎯

300

250

100

80

(mA)

N (mW)

200

I
A

EN

60

150

DISSI

40

100

,

D

50

R = 500 C/W

°

θ

JA

LLE

C

20

-I ,

250 mW
500

-55 to +150

V
V
V

nA

μA

⎯

IC = -50μA, IE = 0
IC = -1mA, IB = 0
IE = -50μA, IC = 0

= -30V

V

CB

= -30V, TA = 150°C

V

CB

V

= -4.0V

EB

VCE = -6.0V, IC = -1.0mA

°C/W

°C

IC = -50mA, IB = -5.0mA

VCB = -12V, f = 1.0MHz, IE = 0
V

= -12V, IC = -2.0mA,

MHz

CE

f = 100MHz

I = -0.5mA

B

I = -0.4mA

B

I = -0.3mA

B

I = -0.2mA

B

I = -0.1mA

B

0

0 255075100125150

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1 Power Derating Curve

0

012 3 45

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Volta g e

2DA1774QLP

Document number: DS31438 Rev. 4 - 2

2 of 4

www.diodes.com

January 2011

© Diodes Incorporated