Page 1
C
2DA1213O/Y
50V PNP POWER SWITCHING TRANSISTOR IN SOT89
Features
BV
I
High Gain Holds up
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> -50V
CEO
= -2A high Continuous Collector Current
C
SOT89
Top View
B
Mechanical Data
Case: SOT89
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
Weight: 0.052 grams (Approximate)
E
Device Symbol
MIL-STD-202, Method 208
C
E
C
B
Top View
Pin Out
Ordering Information (Notes 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DA1213O-13 P25X 13 12 2,500
2DA1213Y-13 P25Y 13 12 2,500
2DA1213Y-13R P25Y 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
YWW
xxxx
xxxx = Product Type Marking Code:
P25X = 2DA1213O
P25Y = 2DA1213Y
YWW = Date Code Marking
Y = Last digit of year (ex: 1 = 2011)
WW = Week code 01 - 53
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
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February 2013
© Diodes Incorporated
Page 2
Maximum Ratings (@T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Thermal Characteristics (@T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
P
D
R
θJA
R
θJL
T
J, TSTG
-50 V
-50 V
-6 V
-2 A
-2.5 A
-500 mA
1 W
125
18.3
-55 to +150
2DA1213O/Y
C/W
C/W
C
Thermal Characteristics and Derating Information
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
100
Single Pulse. T
10
amb
=25°C
Thermal Resistance (°C/W)
120
100
80
D=0.5
60
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Power Dissipation
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
Pulse Width (s)
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Page 3
)
)
(s)
(f)
C
O
CTO
R
C
U
R
RENT
C C
URRENT
G
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
BV
BV
BV
I
CBO
I
EBO
CBO
CEO
EBO
2DA1213O
DC Current Gain (Note 8)
2DA1213Y 120 240
h
FE
2DA1213O, 2DA1213Y 20 —
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Transition Frequency
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
V
CE(sat
V
BE(sat
C
f
T
obo
t
on
t
t
-50 — — V
-50 — — V
-6 — — V
— — -100 nA
— — -100 nA
70
140
—
— — -0.5 V
— — -1.2 V
— 160 — MHz
— 17 — pF V
— 25 — ns
— 130 — ns
— 12 — ns
2DA1213O/Y
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -50V
VEB = -5V
= -500mA, VCE = -2V
I
C
—
I
= -500mA, VCE = -2V
C
I
= -2A, VCE = -2V
C
IC = -1A, IB = -50mA
IC = -1A, IB = -50mA
= -100mA, V
I
C
f = 100MHz
CB = -10V, IE = 0, f = 1MHz
= -2V, IC = -1A,
V
CE
I
= -IB2 = -50mA
B1
CE
= -2V,
Typical Electrical Characteristics (@T
1.0
0.8
(A)
= +25°C, unless otherwise specified.)
A
I = -10mA
B
I = -8mA
B
AIN
200
150
T = 150°C
A
T = 85°C
A
V = -2V
CE
0.6
0.4
LLE
C
0.2
-I ,
0
01 2 3 45
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage
I = -6mA
B
I = -4mA
B
I = -2mA
B
T = 25°C
100
FE
h, D
50
A
T = -55°C
A
0
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
Figure 2 Typical DC Current Gain vs. Collector Current
C
(2DA1213O)
2DA1213O/Y
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Page 4
C
O
CTO
R
T
TER
T
TER TURN-O
OLTAG
2
T
TER
TURATIO
OLTAG
C, OUTPU
T CAPACITAN
C
C
U
R
R
T
G
T
H P
R
ODU
C
T
H
2DA1213O/Y
1
I/I = 20
CB
-EMI
0.1
LLE
SATURATION VOLTAGE (V)
CE(SAT)
T = 85°C
A
T = -55°C
A
T = 150°C
A
T = 25°C
A
-V ,
0.01
0.0001 0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.
I/I = 20
E (V)
CB
1.0
N V
0.8
T = -55°C
A
0.6
SA
T = 25°C
A
0.4
T = 85°C
A
1.2
E (V)
V = -2V
CE
1
N V
0.8
T = -55°C
A
0.6
T = 25°C
A
0.4
T = 85°C
A
T = 150°C
0.2
BE(ON)
-V , BASE-EMI
0.0001 0.001 0.01 0.1 1 10
A
0
-I , COLLECTOR CURRENT (A)
C
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
60
f = 1MHz
45
E (pF)
30
15
0.2
T = 150°C
A
obo
0
0.0001 0.001 0.01 0.1 1 10
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (A)
C
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
200
z)
0
0.01 0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Figure 6 Typical Output Capacitance Characteristics
(M
150
100
AIN-BANDWID
50
V = -6V
CE
f = 100MHz
EN
0
T
0102030405060708090100
f,
-I , COLLECTOR CURRENT (mA)
C
Figure 7 Typical Gain-Bandwidth Product vs. Collector Current
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
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Page 5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
B1
D1
8° (4X)
D
0
0
2
.
0
R
1
H
L
B
e
A
C
Dim Min Max
H
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44
D 4.40 4.60
D1 1.62 1.83
E 2.29 2.60
e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
L 0.89 1.20
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y3
Y
X1
X2 (2x)
Y1
Y4
Y2
C
X (3x)
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
2DA1213O/Y
SOT89
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
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© Diodes Incorporated
Page 6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
2DA1213O/Y
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
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