Diodes Incorporated
2DA1201Y
120V PNP SILICON TRANSISTOR IN SOT89
Product Line o
Features
• BV
• Max Continuous Current I
• High Gain Holds up h
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
CEO
> -120V
= -0.8A
C
≥ 120 @ IC = -100mA
FE
SOT89
Top View
Mechanical Data
• Case: SOT89
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
• Weight: 0.05 grams (Approximate)
C
E
Device Symbol
MIL-STD-202, Method 208
C
Top View
Pin Out
E
C
B
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
2DA1201Y-7 AEC-Q101 1T2 7 12 1,000
2DA1201YQTC Automotive 1T2 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2DA1201Y
Document number: DS35644 Rev: 3 - 2
1T2
1T2 = Product Type Marking Code
1 of 7
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August 2012
© Diodes Incorporated
Maximum Ratings (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 6)
Base Current
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Product Line o
Diodes Incorporated
2DA1201Y
-120 V
-120 V
-7 V
-800 mA
-3 A
-160 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
P
R
R
T
J, TSTG
θJA
θJL
D
1.5 W
83
18.3
-55 to +150
°C/W
°C/W
ESD Ratings (Note 9)
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
7. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
°C
2DA1201Y
Document number: DS35644 Rev: 3 - 2
2 of 7
www.diodes.com
August 2012
© Diodes Incorporated
Thermal Characteristics and Derating Information
R
CE(sat)
Limited
1
DC
1s
100ms
100m
10ms
1ms
100µs
Collector Current (A)
-I
Single Pulse
T
=25°C
amb
25x25mm 1oz Cu
10m
C
100m 1 10 100
-VCE Collector - Emitter Voltage (V)
Safe Operating Area
Product Line o
Diodes Incorporated
2DA1201Y
1.6
1.4
25x25mm 1oz Cu
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissi pation (W)
Temperature (°C)
Derating Curve
80
70
60
50
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resist an ce (°C/W)
1
100m
10m
Collector Current (A)
C
-I
T
=25°C
amb
25x25mm 1oz Cu
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Imped an c e
R
CE(sat)
Limited
DC
1s
100ms
10ms
Single Pulse
T
=85°C
amb
25x25mm 1oz Cu
100m 1 10 100
1ms
100µs
Single Pulse
100
25x25mm 1oz Cu
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
T
amb
=25°C
-VCE Collector - Emitter Voltage (V)
Safe Operating Area
2DA1201Y
Document number: DS35644 Rev: 3 - 2
3 of 7
www.diodes.com
August 2012
© Diodes Incorporated