Diodes 2DA1201Y User Manual

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B
Diodes Incorporated
2DA1201Y
120V PNP SILICON TRANSISTOR IN SOT89
Product Line o
Features
BV
Max Continuous Current I
High Gain Holds up h
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
CEO
> -120V
= -0.8A
C
120 @ IC = -100mA
FE
SOT89
Top View
Mechanical Data
Case: SOT89
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
Weight: 0.05 grams (Approximate)
C
E
Device Symbol
MIL-STD-202, Method 208
C
Top View
Pin Out
E
C
B
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
2DA1201Y-7 AEC-Q101 1T2 7 12 1,000
2DA1201YQTC Automotive 1T2 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2DA1201Y
Document number: DS35644 Rev: 3 - 2
1T2
1T2 = Product Type Marking Code
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Maximum Ratings (@T
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current (Note 6) Base Current
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Product Line o
Diodes Incorporated
2DA1201Y
-120 V
-120 V
-7 V
-800 mA
-3 A
-160 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range
P R R
T
J, TSTG
θJA θJL
D
1.5 W 83
18.3
-55 to +150
°C/W °C/W
ESD Ratings (Note 9)
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
7. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
°C
2DA1201Y
Document number: DS35644 Rev: 3 - 2
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Thermal Characteristics and Derating Information
R
CE(sat)
Limited
1
DC
1s
100ms
100m
10ms
1ms
100µs
Collector Current (A)
-I
Single Pulse
T
=25°C
amb
25x25mm 1oz Cu
10m
C
100m 1 10 100
-VCE Collector - Emitter Voltage (V)
Safe Operating Area
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Diodes Incorporated
2DA1201Y
1.6
1.4
25x25mm 1oz Cu
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissi pation (W)
Temperature (°C)
Derating Curve
80 70 60 50 40 30 20 10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resist an ce (°C/W)
1
100m
10m
Collector Current (A)
C
-I
T
=25°C
amb
25x25mm 1oz Cu
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Imped an c e
R
CE(sat)
Limited
DC
1s
100ms
10ms
Single Pulse
T
=85°C
amb
25x25mm 1oz Cu
100m 1 10 100
1ms
100µs
Single Pulse
100
25x25mm 1oz Cu
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
T
amb
=25°C
-VCE Collector - Emitter Voltage (V)
Safe Operating Area
2DA1201Y
Document number: DS35644 Rev: 3 - 2
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)
)
(d)
(r)
(s)
(f)
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current Static Forward Current Transfer Ratio (Note 10) Collector-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-On Voltage (Note 10) Transition Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time
Note: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
BV BV BV
V
V
C
CBO CEO EBO
I
CES
I
CBO
I
EBO
h
FE CE(sat BE(on
f
T
OBO
t
t
t
t
Product Line o
Diodes Incorporated
-120
-120
-7
- - -100 nA
- - -100 nA
- - -100 nA
120 - 240 -
- - -1 V
- - -1 V
- 160 - MHz 15 pF V
- 62 - ns
- 50 - ns
- 440 - ns
- 42 - ns
-
-
-
- V
- V
- V
2DA1201Y
IC = -100µA IC = -10mA IE = -100µA VCE = -120V VCB = -120V VEB = -5V IC = -100mA, VCE = -5V IC = -500mA, IB = -50mA IC = -500mA, VCE = -5V IC = -100mA, V
CB = -10V, IE = 0, f = 1MHz
V
= -80V, IC = -100mA,
CC
= -10mA, IB2 = 20mA
I
B1
CE
= -5V
2DA1201Y
Document number: DS35644 Rev: 3 - 2
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Typical Electrical Characteristics (@T
1
Tamb=25°C
IC/IB=100
(V)
100m
CE(SAT)
- V
10m
1m 10m 100m 1
IC/IB=20
IC/IB=10
- IC Collecto r Current (A)
V
CE(SAT)
v I
C
= +25°C, unless otherwise specified.)
A
0.4
IC/IB=10
0.3
(V)
0.2
IC/IB=50
CE(SAT)
0.1
- V
0.0 10m 100m 1
Product Line o
Diodes Incorporated
2DA1201Y
150°C 100°C
-55°C
- IC Collecto r C urrent (A)
V
CE(SAT)
v I
C
25°C
300
150°C
250
100°C
200
25°C
150 100
, DC Current Gain
FE
h
-55°C
50
0
1m 10m 100m 1
- IC Collecto r Current (A)
(V)
BE(ON)
- V
1.0
0.8
0.6
0.4
hFE v I
VCE=-5V
-55°C
25°C
100°C
C
VCE=-5V
IC/IB=10
1.0
-55°C
0.8
25°C
(V)
0.6
BE(SAT)
- V
0.4
1m 10m 100m 1
100°C
- IC Collecto r C urrent (A)
V
BE(SAT)
v I
C
150°C
150°C
0.2 1m 10m 100m 1
- IC Collecto r Current (A)
V
2DA1201Y
Document number: DS35644 Rev: 3 - 2
BE(ON)
v I
C
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
B1
D1
8° (4X)
D
0
0
2
.
0
R
1
H
L
B
e
A
C
Dim Min Max
H
A 1.40 1.60 B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44 D 4.40 4.60
D1 1.62 1.83
E 2.29 2.60 e 1.50 Typ H 3.94 4.25
H1 2.63 2.93
L 0.89 1.20 All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y3
Y
X (3x)
X2 (2x)
X1
Y2
Dimensions Value (in mm)
X 0.900 X1 1.733 X2 0.416
Y1
Y4
C
Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125
C 1.500
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Diodes Incorporated
2DA1201Y
SOT89
2DA1201Y
Document number: DS35644 Rev: 3 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
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2DA1201Y
2DA1201Y
Document number: DS35644 Rev: 3 - 2
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