Diodes 1N5819HW User Manual
)
p
θ
(BR)
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
• Guard Ring Die Construction for Transient Protection
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 4)
Maximum Ratings @T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage @ I
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TL = 90°CI
Repetitive Peak Forward Current
1ms, δ ≤ 0.5
t
≤
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
= 25°C unless otherwise specified
A
= 1.0mA
R
Mechanical Data
• Case: SOD-123
• Plastic Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Polarity: Cathode Band
• Leads: Matte Tin Finish annealed over Alloy 42 leadframe (Lead
Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.01 grams (approximate)
Top View
V
RRM
V
RWM
V
R
V
R(RMS
O
I
FRM
I
FSM
1N5819HW
40 V
28 V
1.0 A
1.5 A
25 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 2)
Operating and Storage Temperature Range
P
R
T
J, TSTG
D
JA
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 3)
Forward Voltage
Reverse Leakage Current (Note 3)
Total Capacitance
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PC Board, 2"x2", 2 oz. Copper, single sided, Cathode pad dimensions 0.75"x1.0", Anode pad dimensions 0.25"x 1.0".
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
V
V
F
I
R
C
T
40
R
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
⎯
⎯
⎯
⎯
⎯
10
1
15
1.5
50 60 pF
Fire Retardants.
2O3
1N5819HW
Document number: DS30217 Rev. 15 - 2
1 of 4
www.diodes.com
450 mW
-65 to +125
0.320
0.450
0.750
1.0
10
50
2
75
3
222
V
V
mA
mA
μA
mA
μA
mA
IR = 1.0mA
= 0.1A
I
F
I
= 1.0A
F
= 3.0A
I
F
= 40V, TA = 25°C
V
R
V
= 40V, TA = 100°C
R
= 4V, TA = 25°C
V
R
V
= 4V, TA = 100°C
R
= 6V, TA = 25°C
V
R
V
= 6V, TA = 100°C
R
°C/W
°C
VR = 4V, f = 1.0MHz
February 2010
© Diodes Incorporated
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CAPACITANC
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PER
T
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P
F
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R
G
C
U
R
R
N
T
1N5819HW
10
10,000
(A)
1
D
1,000
100
0.1
10
S
0.01
1
0.001
0.1
F
I, I
0.0001
1,000
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.40.2
0.6
0.8
Fig. 1 Typical Forward C haracteristics
1.0
.01
0
51015
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
20
25 30
Fig. 2 Typical Reverse Characteristics
1.0
35
40
0.8
E (
0.6
100
AL
T
10
0
Fig. 3 T otal Capacitance vs. Reverse Voltage
150
)
10
V , DC REVERSE VOLTAGE (V)
R
20 30
40
E (º
125
0.4
0.2
F(AV)
I , AVERAGE FORWARD CURRENT (A)
Single Puls e Half-Wave
60 Hz Resistive or Inductive Load
0
10 40 60 80 100 120
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 4 Forward Current Derating Curve
25
(A)
E
20
140
A
EM
100
E
15
D S
75
WA
10
ED AMBIEN
, DE
A
50
25
1
V , DC REVERSE VOLTAGE (V)
R
10
Fig. 5 Operating Temperature Derating
20
30
40
50
5
EAK
8.3ms Single Half Sine-Wave
FSM
I,
0
110100
NUMBER OF CYCLES AT 60 Hz
Fig. 6 Maxi m um Non-Re petitive P eak Forwa rd Surge Cur r ent
1N5819HW
Document number: DS30217 Rev. 15 - 2
2 of 4
www.diodes.com
February 2010
© Diodes Incorporated
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