Diodes 1N5711WS User Manual

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Features

Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Fast Switching Speed
Surface Mount Package Ideally Suited for Automated Insertion
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Maximum Ratings @T
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Forward Continuous Current
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
SURFACE MOUNT SCHOTTKY BARRIER DIODE

Mechanical Data

Case: SOD-323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: Cathode Band
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.004 grams (approximate)
Top View
V
V
V
R(RMS)
RRM
RWM
VR
IFM
70 V
49 V 15 mA
1N5711WS
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Breakdown Voltage (Note 2) Reverse Leakage Current (Note 2)
Forward Voltage Drop Total Capacitance Reverse Recovery Time
Notes: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
1N5711WS
Document number: DS31033 Rev. 12 - 2
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
= 25°C unless otherwise specified
A
PD
R
θ
TJ
T
STG
V
(BR)R
IR VF CT
trr
1 of 3
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JA
70
⎯ ⎯ ⎯ ⎯
Fire Retardants.
2O3
-55 to +125
-55 to +150
200 nA
0.41
1.00
2.0 pF
1.0 ns
150 mW 650
V
IR = 10μA VR = 50V IF = 1.0mA
V
IF = 15mA VR = 0V, f = 1.0MHz IF = IR = 5.0mA, Irr = 0.1 x IR, RL = 100Ω
°C/W
°C °C
© Diodes Incorporated
July 2008
TANT
O
U
O
RWARD CUR
R
T
TANT
O
US R
R
CUR
RENT
C, TOT
CAPACITAN
C
F
P, P
OWER
PATIO
N
1N5711WS
10,000
(nA )
1,000
(mA) EN
100
T = 125ºC
A
T = 75ºC
A
T = 25ºC
A
10
SE
100
EVE
S F
10
1.0
ANE
ANE
1
T = 0ºC
A
T = -40ºC
0.1
F
I, INS
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.4
A
0.8
1.0
0.60.2
Fig. 1 Typical Forward Characteristics
1.8
1.2
1.4
1.6
I, INS
R
0.1 0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
2010 30 605040
Fig. 2 Typical Reverse Characteristics
70
250
1.6
)
1.4
E (p
1.2
1.0
200
(mW)
150
0.8
AL
0.6
T
0.4
DISSI
100
D
50
0.2 0
0
105
V , DC REVERSE VOLTAGE (V)
R
Fig. 3 To t al Capacitance vs. Rev er se Voltage
15
20 25
353040
0
0100
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 4 Power Derating Curve
200
Ordering Information (Note 5)
Part Number Case Packaging
1N5711WS-7-F SOD-323 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

SA
1N5711WS
Document number: DS31033 Rev. 12 - 2
www.diodes.com
SA = Product Type Marking Code
2 of 3
July 2008
© Diodes Incorporated
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