Diodes 1N4448WSF User Manual

Features

• Fast Switching Speed: trr ≤ 4.0ns

• Low Leakage Current: I

• Low Capacitance: C

• Flat Lead for High Thermal Efficiency

• Small Surface Mount Package

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

R

≤ 4pF

T

≤ 25nA

SOD323F

Top View

1N4448WSF

SURFACE MOUNT FAST SWITCHING DIODE

Mechanical Data

• Case: SOD323F

• Case Material: Molded Plastic, “Green Molding Compound”.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: Cathode Band

• Terminals: Finish - Matte Tin annealed over Copper Alloy

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.007 grams (approximate)

Ordering Information (Note 3)

Part Number Qualification Case Packaging

1N4448WSF-7 Commercial SOD323F 3000/Tape & Reel

1N4448WSFQ-7 Automotive SOD323F 3000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017 2018

Code Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

TK

YM

TK = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1N4448WSF

Document number: DS35380 Rev. 3 - 2

1 of 4

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August 2011

© Diodes Incorporated

)

θ

(BR)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs

@ t = 1.0s

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4)

NEW PRODUCT

Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range

V

T

V

RM

V

RRM

V

RWM

V

R

R(RMS

I

FM

I

O

I

FSM

P

D

R

JA

, T

J

STG

1N4448WSF

100 V

75 V

53 V
500 mA
250 mA

4

0.5

A

400 mW
313

-65 to +150

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

Reverse Breakdown Voltage (Note 5)

Forward Voltage

Leakage Current (Note 5)

Total Capacitance
Reverse Recovery Time

Notes: 4. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at http://www/diodes.com.

5. Short duration pulse test used to minimize self-heating.

V

V

F

I

R

C

⎯

T

t

⎯

rr

75

R

0.62 0.72

⎯
⎯
⎯
⎯

⎯

⎯

⎯

⎯

0.855

1.0

V

V

1.25

2.5
50
30

μA
μA
μA

25 nA

4.0 pF

4.0 ns

IR = 100μA

= 5.0mA

I

F

IF = 10mA
IF = 100mA
IF = 150mA

= 75V

V

R

= 75V, TJ = 150°C

V

R

= 25V, TJ = 150°C

V

R

VR = 20V
VR = 0, f = 1.0MHz

= IR = 10mA,

I

F

= 0.1 x IR, RL = 100Ω

I

rr

1N4448WSF

Document number: DS35380 Rev. 3 - 2

2 of 4

www.diodes.com

August 2011

© Diodes Incorporated

PPOWER

P

TIO

N

TANT

O

U

O

R

R

CUR

R

T

TANT

O

US R

R

CUR

RENT

C, TOT

CAPACITAN

C

β2β

NEW PRODUCT

1N4448WSF

500

1

(A)
EN

0.1

D

(mW)

A

400

300

Note 4

WA

0.01

DISSI

,

D

200

S F

ANE

0.001

100

F

0.0001

0

025

100

μ

(A)

10

SE

1

EVE

50

T , AMBIENT TEMPERATURE ( C)

A

75 100 125 150

°

Fig. 1 Forward Current Derating Curve

T = C

°

150

A

T = 25C

A

T = 5C

A

°

1

°

8

I , INS

E (pF)

0 0.4 0.8 1.2 1.6

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2 Typical Forward Characteristics

1.5

f = 1MHz

1

0.1

T = 25C

A

ANE

0.01

R

I , INS

0.001
0 102030405060708090100

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Fig. 3 Typical Reverse Characteristics

°

T = C

°

-55

A

AL

0.5

T

0

110

V , DC REVERSE VOLTAGE (V)

R

40

Fig. 4 Total Capacit ance vs. Re ver se Voltage

Package Outline Dimensions

1N4448WSF

Document number: DS35380 Rev. 3 - 2

D

α

1

c

α

2

He

E

b (2x)

Dim Min Max Typ

A 0.60 0.75
b 0.25 0.35
c 0.05 0.26

−

−

−

D 1.15 1.35 1.25
E 1.60 1.80 1.70

He 2.30 2.70 2.50

SOD323F

1

A

L1 0.30 0.50 0.40

α1
α2
β1
β2

− −

− −

− −

− −

7°
3°
7°
3°

All Dimensions in mm

L1

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August 2011

© Diodes Incorporated

1N4448WSF

Suggested Pad Layout

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

NEW PRODUCT

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

C

Dimensions Value (in mm)

Y (2x)

X (2x)

IMPORTANT NOTICE

LIFE SUPPORT

X 0.710
Y 0.403
C 2.700

1N4448WSF

Document number: DS35380 Rev. 3 - 2

4 of 4

www.diodes.com

August 2011

© Diodes Incorporated