Diodes 1N4448WS User Manual

1N4448WS

SURFACE MOUNT FAST SWITCHING DIODE

Features

 Fast Switching Speed
 Small Surface Mount Package
 For General Purpose Switching Applications
 High Conductance
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOD323
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Leads: Matte Tin Finish annealed over Alloy 42 leadframe (Lead

Free Plating). Solderable per MIL-STD-202, Method 208

 Polarity: Cathode Band
 Weight: 0.004 grams (approximate)

SOD323

Top View

e3

Ordering Information

Part Number Case Packaging

1N4448WS-7-F SOD323 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

Cathod e Band

T5

T5 = Product Type Marking Code

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t = 1.0μs

@t = 1.0s

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range

1N4448WS

Document number: DS30096 Rev. 13 - 2

www.diodes.com

1 of 4

V
V

V

T

J

V

RM

RRM
RWM

V

R

R(RMS)

I

FM

I

O

I

FSM

P

D

R

θJA

, T

STG

100 V

75 V

53 V
500 mA
250 mA

4

0.5

A

200 mW
625 °C/W

-65 to +150 °C

September 2013

© Diodes Incorporated

PPOWER

PATIO

C, T

O

T

C

PACIT

N

C

1N4448WS

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Max Unit Test Condition

Reverse Breakdown Voltage (Note 4)

Forward Voltage

Peak Reverse Current (Note 4)

Total Capacitance
Reverse Recovery Time

Notes: 4. Short duration pulse test used to minimize self-heating.

5. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.

V

(BR)R

V

FM

I

RM

C



T

t

rr

300

75

0.62







0.72

0.855

1.0

1.25

2.5



50
30
25

4.0 pF



4.0 ns

V

IR = 2.5µA
I

I

V

I
I

V

µA

V

µA
µA

V

nA

V
VR = 0, f = 1.0MHz
I

I

= 5.0mA

F

= 10mA

F

= 100mA

F

= 150mA

F

= 75V

R

= 75V, TJ = +150°C

R

= 25V, TJ = +150°C

R

= 20V

R

= IR = 10mA,

F

= 0.1 x IR, RL = 100Ω

rr

1000

N (mW)

200

DISSI

100

,

D

0

025

10.0



1.0

0.10

0.01

Note 5

50

75 100 125 150

T , AMBIENT TEMPERATURE ( C)

A

°

Figure 1 Forward Current Derating Curve

T = 100C

°

A

T = 75C

°

A

T = 50C

°

A

T = 25C

°

A

T = 0C

A

T = -30C

°

A

100

T = 150°C

A

T = 125°C

A

10

T = 85°C

A

T = 25°C

A

1

T = -55°C

A

F

0.1

I , INSTANTANEOUS FORWARD CURRENT (mA)

0 200 400 600 800 1000 1200 1400 1600

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

F

Fig. 2 Typical Forward Charac t er i stics

4

f = 1MHz

3

E (pF)
A

2

A
AL

°

1

T

R

I , INST ANTANEOUS REVERSE CURRENT( A)

0.001
0

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

20

40 60 80

Figure 3 Typical Reverse Characteristics

0

04

2

16

V , DC REVERSE VOLT AGE (V)

R

3

Figure 4 Total Capacitance vs. Rever se Voltage

5

1N4448WS

Document number: DS30096 Rev. 13 - 2

2 of 4

www.diodes.com

September 2013

© Diodes Incorporated