Diodes 1N4448HLP User Manual
Features
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• Low Reverse Leakage Current
• Ideal for Battery Powered Portable Applications
• Lead Free by Design/RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Notes 2 & 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1006-2
• Case Material: Molded Plastic, "Green" Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Marking Information
• Terminals: Finish - NiPdAu over Copper leadframe. Solderable
• Weight: 0.001 grams (approximate)
X1-DFN1006-2
Bottom View
1N4448HLP
SURFACE MOUNT FAST SWITCHING DIODE
UL Flammability Classification Rating 94V-0
per MIL-STD-202, Method 208
Ordering Information (Note 4)
Part Number Case Packaging
1N4448HLP-7 X1-DFN1006-2 3,000/Tape & Reel
1N4448HLP-7B X1-DFN1006-2 10,000/Tape & Reel
Notes: 1. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
1N4448HLP-7 1N4448HLP-7B
T8 T8
Top View
Dot Denotes
Cathode Side
Top View
Bar Denotes
Cathode Side
T8 = Product Type Marking Code
1N4448HLP
Document number: DS30590 Rev. 12 - 2
1 of 5
www.diodes.com
March 2012
© Diodes Incorporated
)
θ
(BR)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
V
T
V
RM
V
RRM
V
RWM
V
R(RMS
I
FM
I
I
FSM
P
R
, T
J
O
R
D
JA
STG
1N4448HLP
100 V
80 V
57 V
300 mA
95 mA
2.0
1.0
A
250 mW
500
-65 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Conditions
Reverse Breakdown Voltage (Note 6)
Forward Voltage
V
V
F
80
R
0.62
⎯
⎯
⎯
⎯
0.72
0.855
1.0
1.25
100
Peak Reverse Current (Note 6)
I
R
⎯
50
30
25
Total Capacitance
Reverse Recovery Time
Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
C
⎯
T
t
rr
⎯
3.0 pF
4.0 ns
V
IR = 100μA
I
= 5.0mA
F
I
= 10mA
F
V
nA
μA
μA
nA
= 100mA
I
F
I
= 150mA
F
V
= 80V
R
V
= 75V, TJ = 150°C
R
= 25V, TJ = 150°C
V
R
V
= 20V
R
VR = 0.5V, f = 1.0MHz
= IR = 10mA,
I
F
= 0.1 x IR, RL = 100Ω
I
rr
1N4448HLP
Document number: DS30590 Rev. 12 - 2
2 of 5
www.diodes.com
March 2012
© Diodes Incorporated
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