1.25Gbps Upstream/1.25Gbps Downstream
Intelligent GE-PON ONU Transceiver
FEATURES
z RoHS compliant
z Digital Diagnostic SFF-8472 MSA compliant
z Support extended operating Case
temperature from -20ºC to +85ºC
z IEEE802.3ah Gigabit Ethernet compliant
z SFF package with SC Receptacle
z 1310nm Burst Mode 1.25Gbps transmitter,
and 1490nm Continuous Mode 1.25Gbps
receiver
z Integrated with WDM filter to cut 1550nm and
1650nm optical signal off
z Single +3.3V power supply with LVPECL
electrical signal interface, LVTTL Bias
Control input and Rx Signal Detect output
OPEP-33-A4Q1RI
Description
DELTA’s GE-PON ONU transceiver
OPEP-33-A4Q1RI is designed for Gigabit Ethernet
Passive Optical Network transmission.
The module is contained in a SFF package
withstandard SC receptacle connector.
The module consists 1310nm FP laser,
InGaAs PIN, Preamplifier and WDM filter in a
high-integrated optical sub-assembly, and it
receives up to 1.25Gbps of continuous data at
1490nm, and transmits 1.25Gbps of burst-mode
data at 1310nm.
z Laser Class 1 Product which comply with the
requirements of IEC 60825-1 and IEC 60825-2
Application
z IEEE 802.3ah 1000BASE-PX10-U
z GE-PON ONU
z Burst Mode Application
z FTTx WDM Broadband Access
z OPEP-33-A4Q1RI data link up to 10km in
9/125um single mode fiber.
DELTA ELECTRONICS, INC.
1 Revision: S3
12/20/2007
www.deltaww.com
OPEP-33-A4Q1RI
1. Absolute Maximum Ratings
Parameter SymbolMin. Typ. Max. Unit Note
Storage Temperature Ts -40 85 ºC
Storage Ambient Humidity HA 5 95 %
Power Supply Voltage VCC -0.3 4 V
Signal Input Voltage -0.3 Vcc+0.3V
Receiver Damage Threshold +2 dBm
Lead Soldering Temperature T
Lead Soldering Time t
260 ºC
SOLD
10 sec
SOLD
2. Recommended Operating Conditions
Parameter SymbolMin. Typ. Max. Unit Note
Operating Case Temperature TC -20 +85 ºC Note (1)
Ambient Humidity HA 5 85 %
Power Supply Voltage VCC 3.13 3.3 3.47 V
Power Supply Current ICC 300 mA
Power Supply Noise Rejection 100 mVp-p
Data Rate
1.25
-100ppm
1.25
1.25
+100ppm
Gbps
Transmission Distance 10 km
Note (1). Measured on topside of case front center
Non-condensing
100Hz to 1MHz
.
3. Specification of Transmitter
Parameter Symbol Min. Typ. Max. Unit Note
Average Launched Power (B.O.L) PO
Average Launched Power (E.O.L) PO
Launched power (Peak.) PP
Extinction Ratio ER
Center Wavelength
Spectrum Width (RMS)
Transmitter OFF Output Power P
λ
σ
Off
C
Laser Burst On Time Ton 32
Laser Burst Off Time Toff 32
Optical Rise/Fall Time tr/tf 260 ps Note (2)
Total Jitter tJ 128 ps Note (3)
Optical Return Loss Tolerance ORLT 15 dB
Relative Intensity Noise RIN15OMA -113 dB/Hz
Optical Transmitter Reflectance -6 dB
Transmitter and Dispersion Penalty TDP 2.8 dB
Output Eye Mask
{X1,X2,Y1,Y2,Y3}
Compliant with IEEE 802.3ah
{0.22,0.375,0.20,0.20,0.30}
Note (1). Launched power (avg.) is power coupled into a single mode fiber with master connector.
Receiver Sensitivity PIN
Input Saturation Power (Overload) P
SAT
Signal Detect -Assert Power PA - -26 dBm
Signal Detect -Deassert Power PD -44 dBm Note (2)
Signal Detect Hysteresis PA-PD 0.5 2 6 dB
Data Output Rise/Fall time tr/tf 260 ps Note (3)
Receiver
Reflectance
Optical Isolation
from External
Source
1480 to 1500nm -12 dB Note (4)
1260 to 1360nm -43 dB
1550 to 1560nm -33 dB
1640 to 1665nm -33 dB
1480 1490 1500 nm PIN-PD
-26
dBm Note (1)
-3 dBm
3 Revision: S3
12/20/2007
DELTA ELECTRONICS, INC.
www.deltaww.com
OPEP-33-A4Q1RI
Note (1). Measured with Light source +1dBm, 1490nm, ER=9dB; BER =<10
-12
@PRBS=27-1 NRZ
This assurance should be met with asynchronous data flowing out of the optical transmitter of
the system under test. The output data pattern from the transmitter of the system under test is a
repetition of alternate 0/1 pattern as defined for this measurement.
Note (2). When SD deasserted, the data output is Low-level (fixed)
Note (3). These are 20%~80% values.
Note (4). Measured at wavelength of 1490nm.
5. Electrical Interface Characteristics
Parameter Symbol Min. Typ. Max. Unit Note
Transmitter
Total Supply Current ICC A mA Note (1)
Differential line input Impedance RIN 80 100 120 Ohm
Differential Data Input Swing VDT 200 1600 mV
Data Input Voltage- High VIH-VCC -1.165 -0.880V
Data Input Voltage- Low VIL-VCC -1.810 -1.475V
BiasCNT Input Voltage- High V
BiasCNT Input Voltage- Low V
2 Vcc V
BCH
0 0.8 V
BCL
Receiver
Total Supply Current ICC B mA Note (1)
Differential Data Output Swing VDR 400 1600 mV
Signal Detect Output Voltage-High V
Signal Detect Output Voltage-Low V
2 Vcc+0.3V
LOSH
0 0.8 V
LOSL
Note (1). A (TX)+ B (RX) = 300mA (Not include termination circuit)
Note (2). Internally AC coupled, but requires a 100Ohm differential termination at or internal to Serializer/
Deserializer.
p-p
LVPECL
LVTTL
Note (2)
p-p
LVTTL
DELTA ELECTRONICS, INC.
4 Revision: S3
12/20/2007
www.deltaww.com
OPEP-33-A4Q1RI
6. Transmitter Burst Mode Timing Characteristics
Parameter Symbol Min. Typ. Max. Unit Note
BiasCNT Enable Duration 1 us
Interval of BiasCNT Signal 0.1121000000us
BiasCNT
BiasCNT Enable Duration
Interval of BiasCNT Signal
VccT BiasCNT Data Input Optical Output
VccT < 3.1V X X OFF
VccT > 3.1V
Low X OFF
High
Floating
Present
Other
Laser bias and modulation signal output
X = Don’t care
Other = Less than +7.5dBm (peak)
High = Logic high level, Low = logic low level
Floating = No Data Input, Present = Data Input,
OFF = Optical Power is less than –45dBm
BiasCNT
Data Input
H
L
Optical Output
Within 15% of steady state
TonToff
7. Digital Diagnostic Monitor Accuracy
Parameter AccuracyUnitCalibrationNote
Transceiver Internal Temperature
Power Supply Internal Voltage ± 3%
TX Bias Current ± 10%
TX Optical Power ± 3dB
RX Optical Power ± 3dB
± 3℃
℃
Internal
V Internal VCC=3.3V±5%
mA Internal Specified by nominal bias value
dBmInternal Not support in burst ONU
dBmInternal -26 to -3dBm
Note. Temperature and Voltage is measured internal to the transceiver.
5 Revision: S3
DELTA ELECTRONICS, INC.
T
C=-20~+85℃
12/20/2007
www.deltaww.com
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