PARAMETER NOTES and CONDITIONS S48SR12001ERFA//B/C/D
Min. Typ.Max.Units
ABSOLUTE MAXIMUM RATINGS
Input Voltage
Continuous 80 Vdc
Transient (100ms) 100ms 100 Vdc
Operating Case Temperature -40 100 °C
Storage Temperature -55 125 °C
Input/Output Isolation Voltage 1 minute 1500 Vdc
INPUT CHARACTERISTICS
Operating Input Voltage 36 48 75 V
Input Under-Voltage Lockout
Turn-On Voltage Threshold 33.8 34.5 35.8 V
Turn-Off Voltage Threshold 32.0 33.5 34.5 V
Lockout Hysteresis Voltage 1 2 3 V
Maximum Input Current 100% Load, 36Vin 0.6 A
No-Load Input Current 25 mA
Inrush Current(I2t) 0.01 A2s
Input Reflected-Ripple Current P-P thru 12µH inductor, 5Hz to 20MHz 5 mA
Input Voltage Ripple Rejection 120 Hz 50 dB
OUTPUT CHARACTERISTICS
Output Voltage Set Point Vin=48V, Io=50% Io, max, Tc=25℃ 11.76 12.00 12.24
Output Voltage Regulation
Over Load Io=Io,min to Io,max ±12 ±60 mV
Over Line Vin=36V to 75V ±12 ±36 mV
Over Temperature Tc=-40C to 100C 100 300 ppm/℃
Total Output Voltage Range Over sample load, line and temperature TBD TBD V
Output Voltage Ripple and Noise 5Hz to 20MHz bandwidth
Peak-to-Peak Full Load, 1µF ceramic, 10µF tantalum 50 100 mV
RMS Full Load, 1µF ceramic, 10µF tantalum 15 25 mV
Operating Output Current Range 0 1.25 A
Output DC Current-Limit Inception Output Voltage 10% Low 1.5 2 2.5 A
DYNAMIC CHARACTERISTICS
Output Voltage Current Transient 48V, 10µF Tan & 1µF Ceramic load cap, 0.1A/µs
Positive Step Change in Output Current 50% Io, max to 75% Io, max 100 240 mV
Negative Step Change in Output Current 75% Io, max to 50% Io, max 100 240 mV
Setting Time to 1% of Final Value 600 µs
Turn-On Transient
Start-Up Time, From Input 35 50
Maximum Output Capacitance Full load; 5% overshoot of Vout at startup 47 µF
EFFICIENCY
100% Load
ISOLATION CHARACTERISTICS
Isolation Voltage 1500 V
Isolation Resistance 100 MΩ
Isolation Capacitance 500 pF
FEATURE CHARACTERISTICS
Switching Frequency 290 kHz
Output Voltage Trim Range
Output Over-Voltage Protection Over full temp range; % of nominal Vout 115 125 140 %
GENERAL SPECIFICATIONS
Calculated MTBF Io=80% of Io, max; Tc=40°C 3 M hours
Weight (Encapsulated) 25.5 grams
Weight (Open Frame) 12.5 grams
84 86.5 %
Across Trim Pin & +Vo or -Vo, Pout≦max rated power-10 +10 %
V
ms
DS_S48SR12001_07052006
2
ELECTRICAL CHARACTERISTICS CURVES
)
90
36Vin48Vin75Vi n
85
EFFICIENCY (%)
POWER DISSIPATION (W
80
75
4.0
3.5
3.0
2.5
2.0
1.5
36Vin
48Vin75Vin
70
65
60
0.250.50.7511.25
Figure 1: Efficiency vs. load current for minimum, nominal,
and maximum input voltage at 25
°C
1.0
0.5
0.0
0.250.50.7511.25
OUTPUT CURRENT (A)
Figure 2: Power dissipation vs. load current for minimum,
nominal, and maximum input voltage at 25
°C
Figure 3: Typical input characteristics at room temperature Figure 4: Turn-on transient at full rated load current
DS_S48SR12001_07052006
(resistive load) (10 ms/div). Top Trace: Vin( 20V/div); Bottom
Trace Vout (5V/div).
3
ELECTRICAL CHARACTERISTICS CURVES
Figure 5: Turn-on transient at zero load current (10 ms/div).
Top Trace: Vin (20V/div) Bottom Trace Vout (5V/div).
i
s
TEST
12uH
Cs:68uF/100V68uF/100V
ESR< 0.3ESR< 0.3
Figure 7: Test set-up diagram showing measurement points
for Input Reflected Ripple Current. (Figure 8).
Note: Measured input reflected-ripple current with a simulated
source Inductance (L
possible battery impedance.
Ω
) of 12 µH. Capacitor Cs offset
TEST
Ω
20﹫100KHz℃20℃100KHz﹫
Vi(+)
Vi(-)
Figure 6: Output voltage response to step-change in load
current (50%-75%-50% of Io, max; di/dt = 0.1A/µs). Load
cap: 10µF, 100 m
ceramic capacitor. Top Trace: Vout (50mV/div), Bottom
Trace: Iout (0.5A/div).
Figure 8: Input Reflected Ripple Current, i
output current and nominal input voltage with 12
impedance and 68
Ω
ESR tantalum capacitor and 1µF
, at full rated
s
µF electrolytic capacitor (2 mA/div).
µH source
DS_S48SR12001_07052006
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