DEI FPS-4N Datasheet
THE PULSE OF THE FUTURE
DIRECTED
ENERGY
INCORPORATED
FPS-4N DC To 28MHz
Pulse Width Agile Gate Drive Module
The FPS-4N Gate Drive Module is designed for use
with DE-SERIES power MOSFETs. It was developed as a design tool to support the system designer in the evaluation of and prototyping using the
DE-SERIES devices. It provides gate drive and
MOSFET mounting, thereby freeing the designer to
focus on the specifics of the system under development.
By utilizing design techniques developed by DEI,
the FPS-4N can drive DE-150 and DE-275 Series
MOSFETs at frequencies to 28MHz with pulse width
agility from <15ns to continuous, and rise times of 34ns. The FPS-4N can also drive the DE-375 at frequencies to 18MHz, with comparable pulse width
and switching speeds.
Provisions for heat sinking the MOSFET and a stripline drain and source interconnect topology allow
the user to easily incorporate the FPS-4N driver and
power MOSFET as a pulse width agile module in
high speed, high power circuits such as class D and
class E RF generators, high speed pulsed voltage
sources and pulsed current sources.
The control gate input to the FPS4N is a TTL into
50Ω, high true logic signal. This drive is a voltage
source that is level shifted to +15V before being applied to the DE-SERIES gate. Therefore gate drive will
follow the input control gate in time, with a delay (TD)
as specified in the specifications section of this data
sheet.
The output section provides for drain and source connections (SD1 and SD2) in a stripline topology.
Mounting holes are provided at the four corners so
that the PCB may be secured to a chassis, and there
are two holes on either side of the device for high
power mounting of the DE-Series device to a heat
sink. LEDs are used as support power indicators.
A detailed discussion of the design and topology of
the FPS-4N is addressed in the “Gate Driver Design
For Switch Mode Applications” technical note, available for download from DEI’s web site at http://www.
directedenergy.com. For users interested in designing
this circuit into their systems, the circuit board layout
and fabrication package is available from DEI. Contact DEI for more information.
The FPS-4N is provided as a fully assembled and
tested module. The DE-Series MOSFET is sold separately.
•
High Frequency Gate Drive
Module For DE-Series MOSFETs
•
DC to 28MHz Frequency
•
<15ns to DC Pulse Width
•
3nS Typical Rise Time
•
30ns Throughput Delay
THE PULSE OF THE FUTURE
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
PARAMETER VALUE
Output Gate Drive
Rise Time (10% to 90%) 3ns ±1ns
Max. Pulse Recurrence Frequency 28MHz driving a 2000pF load (typical
DE-275 C
ISS
)
19MHz driving a 3500pF load (typical
DE-375 C
ISS
)
Pulse Width <15ns to DC
Throughput Delay 30ns typical
Jitter <50ps 1st Sigma
Inputs
Input Control Gate
TTL into 50Ω
Support Power +5VDC @ <0.1A
+15VDC @ 0.5A (no gate drive), ~2.5A
@ 13.56MHz, 2000pF load
(1)
General
Dimensions 6.0” (15.2cm) L x 2.5” (6.35 cm) W
Cooling 50-100CFM air flow required, depend-
ing upon frequency
S
PECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE
SPECIFICATIONS
(All specifications measured into a 2000pF load (typical DE-275 MOSFET input capacitance)
(1)
+15VDC support power requirements are highly dependent on frequency and load capacitance.
The +15VDC power requirements are approximated by the formula 0.5A + CV
2
F, where C is the
input capacitance (C
ISS
) of the MOSFET being driven, V is the gate drive voltage (typically 15V),
and F is the pulse repetition frequency.
3ns Typical Rise Time, 2000pF Load
(2.5V/Div Vert. Scale, 10ns/Div Horiz. Scale)
<15ns Min. Pulse Width, 2000pF Load
(2V/Div Vert. Scale, 25ns/Div Horiz. Scale)
28MHz Max. Frequency, 2000pF Load
(2V/Div Vert. Scale, 50ns/Div Horiz. Scale)
Doc #9200- 0219 Rev 1
© 2000, Directed Energy, Inc.
FPS-4N Mechanical Layout And Mounting Hole Locations
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