DEI DE375-102N12A Datasheet
Directed Energy, Inc.
An
♦
♦
♦
♦
♦
IXYS
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
50MHz Maximum Frequency
Company
DE375-102N12A
RF Power MOSFET
Preliminary Data Sheet
V
= 1000 V
DSS
I
= 12 A
D25
R
DS(on)
=
1.07 ΩΩΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DHS
P
DAMB
T
J
T
JM
T
stg
T
L
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; R
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
I
≤ IDM, di/dt ≤ 100A/µs, VDD ≤ V
S
≤ 150°C, RG = 0.2Ω
T
j
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
1.6mm (0.063 in) from case for 10 s
= 1 MΩ
GS
DSS
,
3 g
1000 V
1000 V
±20 V
±30 V
12 A
72 A
12 A
30 mJ
5 V/ns
>200 V/ns
550 W
4.5 W
-55…+150 °C
150 °C
-55…+150 °C
300 °C
Symbol Test Conditions Characteristic Values
T
= 25°C unless otherwise specified
J
V
V
I
GSS
I
DSS
R
g
DSS
GS(th)
DS(on)
fs
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 4 ma
VGS = ±20 VDC, VDS = 0
VDS = 0.8 V
V
GS
VGS = 15 V, ID = 0.5I
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 15 V, ID = 0.5I
DSS TJ
= 0 TJ = 125°C
= 25°C
D25
, pulse test
D25
min. typ. max.
1000 V
2.5 5.5 V
±100 nA
50
1.07
12 S
1
µA
mA
Ω
GATE
SG1 SG2
Features
P
DHS
= 550 W
SD1 SD2
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
process
g
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 50MHz
• Easy to mount—no insulators needed
• High power density
DRAIN
Directed Energy, Inc.
An
IXYS
Symbol Test Conditions Characteristic Value s
Company
T
= 25°C unless otherwise specified)
(
J
min. typ. max.
DE375-102N12A
RF Power MOSFET
R
C
C
C
T
T
T
T
Q
Q
Q
R
G
iss
oss
rss
d(on)
on
d(off)
off
g(on)
gs
gd
thJHS
2700 pF
VGS = 0 V, VDS = 0.8 V
f = 1 MHz
VGS = 15 V, VDS = 0.8 V
ID = 0.5 IDM
= 0.2 Ω (External)
R
G
VGS = 10 V, VDS = 0.5 V
ID = 0.5 I
D25
DSS(max)
DSS
DSS
,
305 pF
93 pF
5 ns
3 ns
5 ns
8 ns
93 nC
16 nC
42 nC
0.23 K/W
0.3
Ω
Source-Drain Diode Characteristic Values
T
= 25°C unless otherwise specified)
(
J
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
T
rr
Q
RM
I
RM
VGS = 0 V
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
IF = I
, -di/dt = 100A/µs,
S
= 100V
V
R
JM
7 A
12 A
72 A
1.5 V
200 ns
0.6
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mountin g In str uc tions ” technical note on DEI’s web site at
www.directedenergy.com/apptech.htm
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
µC
Loading...