DEI DE275X2-102N06A Datasheet
An
IXYS
Directed Energy, Inc.
Company
DE275X2-102N06A
RF Power MOSFET
♦
Common Source Push-Pull Pair
♦
N-Channel Enhancement Mode
♦
Low Qg and Rg
♦
High dv/dt
♦
Nanosecond Switching
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in
a common source configuration. The device is optimized for push-pull or
parallel operation in RF generators and amplifiers at frequencies to >65
MHz.
Unless noted, specifications are for each output device
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
(1)
P
DHS
(1)
P
DAMB
(1)
R
thJHS
T
J
T
JM
T
stg
T
L
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; R
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
I
≤ IDM, di/dt ≤ 100A/µs, VDD ≤ V
S
≤ 150°C, RG = 0.2Ω
T
j
IS = 0
Tc = 25°C, Derate 6.0W/°C above 25°C
Tc = 25°C
1.6mm (0.063 in) from case for 10 s
= 1 MΩ
GS
DSS
,
4 g
1000 V
1000 V
±20 V
±30 V
6 A
48 A
6 A
20 mJ
5 V/ns
>200 V/ns
750 W
5.0 W
0.17 K/W
-55…+150 °C
150 °C
-55…+150 °C
300 °C
Symbol Test Conditions Characteristic Values
V
V
I
GSS
I
DSS
R
DSS
GS(th)
DS(on)
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 4 ma
VGS = ±20 VDC, VDS = 0
VDS = 0.8 V
V
GS
VGS = 15 V, ID = 0.5I
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
DSS TJ
= 0 TJ = 125°C
= 25°C
D25
TJ = 25°C unless otherwise specified
min. typ. max.
1000 V
2.5 5.5 V
±100 nA
50
2.5
1
µA
mA
Ω
Preliminary Data Sheet
V
DSS
I
D25
R
DS(on)
P
DHS
DRAIN 1
GATE 1
SG1 SD1
Features
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
cycling capability
•
IXYS advanced low Qg process
•
Low gate charge and capacitances
−
easier to drive
−
faster switching
•
Low R
DS(on)
•
Very low insertion inductance (<2nH)
•
No beryllium oxide (BeO) or other
hazardous materials
Advantages
•
High Performance Push-Pull RF
Package
•
Optimized for RF and high speed
switching at frequencies to >100MHz
•
Easy to mount—no insulators needed
•
High power density
Note: All specifications are per each transistor, unless otherwise noted.
(1)
Thermal specifications are for the
package, not per transistor
= 1000 V
= 6 A
=
= 750 W
DRAIN 2
2.0 ΩΩΩΩ
GATE 2
SG2SD2
g
fs
VDS = 15 V, ID = 0.5I
, pulse test
D25
2 6 S
An
IXYS
Directed Energy, Inc.
Company
DE275X2-102N06A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
R
C
C
C
T
T
T
T
Q
Q
Q
G
iss
oss
rss
d(on)
on
d(off)
off
g(on)
gs
gd
1800 pF
VGS = 0 V, VDS = 0.8 V
f = 1 MHz
VGS = 15 V, VDS = 0.8 V
ID = 0.5 IDM
= 0.2 Ω (External)
R
G
VGS = 10 V, VDS = 0.5 V
ID = 0.5 I
D25
DSS(max)
DSS
DSS
,
min. typ. max.
0.3
100 pF
30 pF
3 ns
2 ns
4 ns
5 ns
50 nC
20 nC
30 nC
Source-Drain Diode Characteristic Values
(T
= 25°C unless otherwise specified)
J
Ω
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
T
rr
Q
RM
I
RM
(1) These parameters apply to the package, not individual MOSFET devices.
VGS = 0 V
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
IF = I
, -di/dt = 100A/µs,
S
= 100V
V
R
JM
4 A
6 A
48 A
1.5 V
200 ns
0.6
µC
For detailed device mounting and installation instructions, see the “
Series MOSFET Mountin g In st ruc tions
” technical note on DEI’s web site at
DE-
www.directedenergy.com/apptech.htm
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
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