DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
1N914
THRU
1N 1N
4148 4454
TECHNICAL SPECIFICATIONS
VOLTAGE RANGE -50 to 100 Volts
OF
FEATURES
* Silicon epitaxial planar diodes
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High speed switching
* High current capability
* High reliability
MECHANICAL DATA
* Case: Glass sealed case
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.13 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HIGH SPEED SWITCHING DIODES
CURRENT - 0.075 to 0.2 Ampere
DO-34 / DO-35
0.52Ø
25.0MIN
L
25.0MIN
Dimensions in millimeters
2.0MAX
L:
DO-34
2.9
MAX
DO-35
4.2
MAX
SYMBOL 1N914 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 UNITS
Maximum Recurrent Peak Reverse Voltage V
Maximum Average Rectified Current Io 75 150 200 150 150 150 150 mA
Maximum Power Dissipation Tamb=25
Maximum Forward Voltage V
Maximum Reverse Current I
Maximum Reverse Recovery Time trr 4.0 4.0 4.0 2.0 2.0 4.0 4.0 nS
Typical Junction Capacitance C
Operating and Storage Temperature Range T
NOTE: 1-1N914A, 1N914B IS SAME AS 1N914, EXCEPT DIFFERENT IN FORWARD VOLTAGE:
1N914A-1.0/20 V/mA
1N914B-1.0/100 V/mA
2.Suffix "M" stands for "DO-34" package.(e.g.:1N4148M)
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C Ptot 250 500 500 500 500 500 500 mW
RRM 100 100 50 75 35 100 75 V
F 1.0/10 1.0/10 1.0/200 1.0/50 1.0/30 1.0/100 1.0/10 V/mA
R 5000/75 5000/75 100/50 50/50 100/25 5000/75 100/10 nA/V
J 4.0 pF
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