DATASHEETS tda5744, tda 5745 DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA5744; TDA5745

Low power mixers/oscillators for
hyperband tuners

Preliminary specification
File under Integrated Circuits, IC02

1998 Mar 09

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

FEATURES

• Mixers/oscillators for hyperband tuners

• Balanced mixer with a common emitter input for VHF

(single input)

• Balanced mixer with a common base input for UHF
(double input)

• 4-pin common emitter oscillator for VHF

• 4-pin common emitter oscillator for UHF

• Electronic band switch

• IF amplifier with a low output impedance to drive the
SAW filter directly (≈2kΩ load)

• Low power, low radiation and small size

• Pin compatible single-chip synthesizer mixer/oscillator

for Full Scale Tuners (FST) are available: TDA6404,
TDA6405 and TDA6405A.

QUICK REFERENCE DATA

TDA5744; TDA5745

APPLICATIONS

• Hyperband tuners for Europe using a 2-band
mixer/oscillator in a switched concept.

GENERAL DESCRIPTION

The TDA5744 and TDA5745 are 2-band mixers/oscillators
intended for VHF/UHF and hyperband tuners (see Fig.1).

The Integrated Circuits (ICs) include two double balanced
mixers and two oscillators, for the VHF and UHF band, and
an IF amplifier. With proper oscillator application and by
using a switchable inductor to split the VHF band into two
sub-bands (the full VHF/UHF and hyperband) the TV
bands can be covered. Two pins are available between
the mixer output and the IF amplifier input to enable IF
filtering for improved signal handling. Band selection is
made by band switch pin BS.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
I

CC

T
T
f

i(RF)

CC

stg
amb

supply voltage operating 4.5 5 5.5 V
supply current − 58 − mA
IC storage temperature −40 − +150 °C
operating ambient temperature −20 − +85 °C
RF input frequency VHF band 45.25 − 399.25 MHz

UHF band 407.25 − 855.25 MHz

G

V

voltage gain VHF band − 27 − dB

UHF band − 38 − dB

F noise figure VHF band − 8 − dB

UHF band − 8.5 − dB

V

o

output voltage causing 1% cross
modulation in channel

VHF band − 119 − dBµV
UHF band − 118 − dBµV

ORDERING INFORMATION

TYPE

NUMBER

TDA5744TS;
TDA5745TS

NAME DESCRIPTION VERSION

SSOP24 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1

PACKAGE

1998 Mar 09 2

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

BLOCK DIAGRAM

handbook, full pagewidth

12 (13)

n.c.

11 (14)

n.c.

10 (15)

n.c.

8 (17)

n.c.

7 (18 )

n.c.

IFFIL2
IFFIL1

RFGND

VHFIN

6 (19)
5 (20)

4 (21)

3 (22)

VHF

STAGE

TDA5744

(TDA5745)

VHF

MIXER

DC

STABILIZER

IF

AMPLIFIER

VHF

OSCILLATOR

TDA5744; TDA5745

(12) 13

(11) 14
(10) 15

(9) 16

(4) 21
(3) 22
(2) 23
(1) 24

V

CC

IFOUT1
IFOUT2

GND

VHFOSCIB1
VHFOSCOC1
VHFOSCOC2
VHFOSCIB2

9 (16)

BS

UHFIN2
UHFIN1

The pin numbers in parenthesis represent the TDA5745.

2 (23)
1 (24)

ELECTRONIC

BAND

SWITCH

UHF

STAGE

UHF

MIXER

Fig.1 Block diagram.

UHF

OSCILLATOR

(8) 17
(7) 18
(6) 19
(5) 20

MGM466

UHFOSCIB1
UHFOSCOC1

UHFOSCOC2
UHFOSCIB2

1998 Mar 09 3

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

PINNING

SYMBOL

UHFIN1 1 24 UHF input 1
UHFIN2 2 23 UHF input 2
VHFIN 3 22 VHF input
RFGND 4 21 RF ground
IFFIL1 5 20 IF filter output 1
IFFIL2 6 19 IF filter output 2
n.c. 7 18 not connected
n.c. 8 17 not connected
BS 9 16 electronic band switch
n.c. 10 15 not connected
n.c. 11 14 not connected
n.c. 12 13 not connected
V

CC

IFOUT1 14 11 IF amplifier output 1
IFOUT2 15 10 IF amplifier output 2
GND 16 9 ground
UHFOSCIB1 17 8 UHF oscillator base input 1
UHFOSCOC1 18 7 UHF oscillator collector output 1
UHFOSCOC2 19 6 UHF oscillator collector output 2
UHFOSCIB2 20 5 UHF oscillator base input 2
VHFOSCIB1 21 4 VHF oscillator base input 1
VHFOSCOC1 22 3 VHF oscillator collector output 1
VHFOSCOC2 23 2 VHF oscillator collector output 2
VHFOSCIB2 24 1 VHF oscillator base input 2

TDA5744 TDA5745

PIN

DESCRIPTION

13 12 supply voltage

TDA5744; TDA5745

1998 Mar 09 4

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

handbook, halfpage

UHFIN1
UHFIN2

RFGND

VHFIN

IFFIL1
IFFIL2

n.c.
n.c.

BS
n.c.
n.c.
n.c.

1
2
3
4
5
6

TDA5744TS

7
8

9
10
11

MGM464

VHFOSCIB2

24
23

VHFOSCOC2
VHFOSCOC1

22
21

VHFOSCIB1

20

UHFOSCIB2

19

UHFOSCOC2
UHFOSCOC1

18

UHFOSCIB1

17

GND

16

IFOUT2

15

IFOUT1

14

V

1312

CC

handbook, halfpage

VHFOSCIB2
VHFOSCOC2
VHFOSCOC1

VHFOSCIB1

UHFOSCIB2
UHFOSCOC2
UHFOSCOC1

UHFOSCIB1

GND
IFOUT2
IFOUT1

V

CC

TDA5744; TDA5745

1
2
3
4
5
6

TDA5745TS

7
8

9
10
11

MGM465

24
23
22
21
20
19
18
17
16
15
14
1312

UHFIN1
UHFIN2
VHFIN
RFGND
IFFIL1
IFFIL2
n.c.
n.c.
BS
n.c.
n.c.
n.c.

Fig.2 Pin configuration for TDA5744TS.

Fig.3 Pin configuration for TDA5745TS.

1998 Mar 09 5

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for

TDA5744; TDA5745

hyperband tuners

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

I

O(n)

t

sc(max)

T

stg

T

amb

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

CHARACTERISTICS

=5V; T

V

CC

output current of each pin to ground:

for TDA5744; pins 1 to 6, 9 and 13 to 24 −−10 mA

for TDA5745; pins 1 to 12, 16 and 19 to 24 −−10 mA
maximum short-circuit time (all pins to VCC and all pins to GND and RFGND) − 10 s
IC storage temperature −40 +150 °C
operating ambient temperature −20 +85 °C
junction temperature − 150 °C

thermal resistance from junction to ambient in free air 119 K/W

=25°C; unless otherwise specified; measured in Fig.11.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

CC

I

CC

V

sw(VHF)

V

sw(UHF)

I

sw(VHF)

I

sw(UHF)

supply voltage 4.5 5 5.5 V
supply current − 58 65 mA
VHF band switching voltage 0 − 2V
UHF band switching voltage 3 − V

CC

V
VHF band switching current −−2µA
UHF band switching current V

sw(UHF)

=5V − 4.5 10 µA

IF amplifier

S

22

output reflection coefficient magnitude −−12.5 − dB

phase − 1.4 − deg

R

s

L

s

real part of Zo=Rs+jωL
imaginary part of

Zo=Rs+jωL

s

s

− 81 −Ω

− 9.5 − nH

VHF mixer (including IF amplifier)

f

i(RF)

F noise figure f

g

os

RF input frequency picture carrier frequency 45.25 − 399.25 MHz

= 50 MHz; see Figs 8 and 9 − 79dB

RF

f

= 150 MHz; see Figs 8 and 9 − 810dB

RF

f

= 300 MHz − 911dB

RF

optimum source
conductance for noise figure

fRF=50MHz − 0.7 − mS
f

= 150 MHz − 0.9 − mS

RF

f

= 300 MHz − 1.5 − mS

RF

1998 Mar 09 6

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for

TDA5744; TDA5745

hyperband tuners

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

i

C

i

V

o

V

i

G

V

VHF oscillator

f

osc

∆f

osc(V)

∆f

osc(T)

∆f

osc(t)

Φ

osc

RSC

input conductance fRF= 45.25 MHz − 0.25 − mS

f

= 399.25 MHz − 0.5 − mS

RF

input capacitance fRF= 45.25 to 399.25 MHz − 2 − pF
output voltage causing 1%

cross modulation in channel
input voltage causing pulling

fRF= 45.25 MHz; see Fig.6 116 119 − dBµV
f

= 399.25 MHz; see Fig.6 116 119 − dBµV

RF

fRF= 399.25 MHz; note 1 − 88 − dBµV

in channel (750 Hz)
voltage gain fRF= 45.25 MHz; see Fig.4 24.5 27 29.5 dB

f

= 399.25 MHz; see Fig.4 24.5 27 29.5 dB

RF

oscillator frequency 84.15 − 438.15 MHz
oscillator frequency shift

with supply voltage

∆VCC= 5%; note 2 − 100 200 kHz
∆V

= 10%; worst case in the

CC

− 200 − kHz

frequency range; note 2

oscillator frequency drift
with temperature

∆T=25°C without compensation: NP0
capacitors; worst case in the frequency

− 1300 tbf kHz

range; note 3

oscillator frequency drift
with time

phase noise,
carrier-to-noise sideband

ripple susceptibility of V

(p-p)

(peak-to-peak value)

worst case in the frequency range;
note 4

±100 kHz frequency offset; worst case
in the frequency range

VCC= 5 V; worst case in the frequency

CC

range; ripple frequency 500 kHz; note 5

− 600 tbf kHz

− 106 − dBc/Hz

15 40 − mV

UHF mixer (including IF amplifier)

f

i(RF)

RF input frequency picture carrier frequency 407.25 − 855.25 MHz

F noise figure f

R

s

L

s

V

o

real part of Zi=Rs+jωL

s

imaginary part of
Zi=Rs+jωL

s

output voltage causing 1%
cross modulation in channel

V

i

input voltage causing pulling
in channel (750 Hz)

G

V

voltage gain fRF= 407.25 MHz; see Fig.4 35 38 41 dB

= 407.25 MHz; see Fig.10 − 810dB

RF

= 855.25 MHz; not corrected for

f

RF

− 911dB

image; see Fig.10
fRF= 407.25 MHz − 30 −Ω
f

= 855.25 MHz − 38 −Ω

RF

fRF= 407.25 MHz − 9 − nH
f

= 855.25 MHz − 6 − nH

RF

fRF= 407.25 MHz; see Fig.7 116 119 − dBµV
f

= 855.25 MHz; see Fig.7 114 117 − dBµV

RF

fRF= 855.25 MHz; note 1 − 78 − dBµV

f

= 855.25 MHz; see Fig.4 35 38 41 dB

RF

1998 Mar 09 7

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for

TDA5744; TDA5745

hyperband tuners

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

UHF oscillator

f

osc

∆f

osc(V)

∆f

osc(T)

∆f

osc(t)

Φ

osc

RSC

Rejection at the IF amplifier output

INT

CHX

INT

S02

Notes

1. This is the level of the RF signal (100% amplitude modulated with 11.89 kHz) that causes a 750 Hz frequency
deviation on the oscillator signal; it produces sidebands 30 dB below the level of the oscillator signal.

2. The frequency shift is defined as the change of the oscillator frequency when the supply voltage varies from
VCC= 5 to 4.5 V or from VCC= 5 to 5.25 V. The oscillator is free-running during this measurement.

3. The frequency drift is defined as the change of the oscillator frequency when the ambient temperature varies from
T

amb

4. The switching on drift is defined as the change of the oscillator frequency between 5 seconds and 15 minutes after
switching on. The oscillator is free-running during this measurement.

5. The ripple susceptibility is measured for a 500 kHz ripple at the IF amplifier output using the measurement circuit;
the level of the ripple signal is increased until a difference of 53.5 dB between the IF carrier set at 100 dBµV and the
sideband components is reached.

6. Channel x beat: picture carrier frequency (fpc) and sound carrier frequency (fsc) both at 80 dBµV.
The rejection of the interfering product f

7. Channel S02: fpc is 76.25 MHz at 70 dBµV; f
The rejection of f

oscillator frequency 446.15 − 894.15 MHz
oscillator frequency shift

with supply voltage

∆VCC= 5%; note 2 − 30 80 kHz
∆V

= 10%; worst case in the

CC

− 80 tbf kHz

frequency range; note 2

oscillator frequency drift
with temperature

oscillator frequency drift
with time

phase noise,
carrier-to-noise sideband

ripple susceptibility of V

(p-p)

(peak-to-peak value)

∆T=25°C; with compensation; worst
case in the frequency range; note 3

worst case in the frequency range;
note 4

±100 kHz frequency offset; worst case
in the frequency range

VCC= 5 V; worst case in the frequency

CC

range; ripple frequency 500 kHz; note 5

− 600 tbf kHz

− 200 tbf kHz

− 106 − dBc/Hz

15 20 − mV

channel x beat note 6 60 −−dBc
S02 beat note 7 66 −−dBc

=25to0°C or from T

− 2 × fIF= 37.35 MHz should be >66 dB.

osc

=25to50°C. The oscillator is free-running during this measurement.

amb

− f

pc(RF)+fsc(RF)

= 115.15 MHz.

osc

at 35.35 MHz should be >60 dB.

osc

1998 Mar 09 8

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

TEST AND APPLICATION INFORMATION

handbook, full pagewidth

e

(1) N1 is 2 × 5 turns.
(2) N2 is 2 turns.
The gain is defined as the transducer gain plus the voltage transformation ratio (T

Z

>> 50 Ω⇒Vi=2×V

i

V

=V’

o

+ 16 dB (transformer ratio and transformer loss); GV=20log

meas

signal
source

50 Ω

V

; Vi=80dBµV.

meas

meas

V

RMS

voltmeter

N1

------- ­N2

50 Ω

5=

VHFIN IFOUT1

V

i

D.U.T.

IFOUT2

V

) of the transformer.

loss

V

o

-----­V

C

o

i

T

(1)N1(2)

TDA5744; TDA5745

spectrum

meas

analyzer
50 Ω

MGK828

N2

V'

Fig.4 Voltage gain (GV) measurement in the VHF band.

handbook, full pagewidth

e

(1) N1 is 2 × 5 turns.
(2) N2 is 2 turns.
The gain is defined as the transducer gain plus the voltage transformation ratio (T

V
V

i=Vmeas

=V’

o

meas

; Vi=70dBµV.

signal
source

50 Ω

V

V

RMS

voltmeter

50 Ω

50 Ω

N1

------- ­N2

meas

+ 16 dB (transformer ratio and transformer loss); Gv= 20 log + 1 dB (1 dB = correction for hybrid loss).

5=

V

i

A

HYBRID

B

C

D

UHFIN1 IFOUT1

D.U.T.

IFOUT2UHFIN2

) of the transformer.

loss

V

o

-----­V

i

T

(1)N1(2)

V

C

o

N2

V'

meas

spectrum
analyzer

50 Ω

MGK829

Fig.5 Voltage gain (GV) measurement in the UHF band.

1998 Mar 09 9

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

handbook, full pagewidth

V

meas

unwanted

signal

source

50 Ω

AM = 30%

e

u

AC

HYBRID

50 Ω

e

w

wanted

BD

signal

source

(1) N1 is 2 × 5 turns.
(2) N2 is 2 turns.

>> 50 Ω⇒Vi=2×V

Z

i

Wanted input signal V
Measured level of the unwanted output signal V
unwanted f

= 50.75 MHz (404.75 MHz); Vou=V’

RF

; V’

meas

meas=Vo

=80dBµV at wanted fRF= 45.25 MHz (399.25 MHz).

i

−16 dB (transformer ratio and transformer loss).

V

V

i

50 Ω

causing 1% AM modulation in the wanted output signal;

ou

+16dB.

meas

50 Ω

RMS

voltmeter

VHFIN IFOUT1

D.U.T.

IFOUT2

N1

------- ­N2

TDA5744; TDA5745

meas

FILTER

38.9 MHz

modulation
analyzer

50 Ω

MGL275

18 dB

(2)

N2

attenuator

V'

V

T

(1)

N1

V

o

C

RMS

voltmeter

5=

Fig.6 Cross modulation measurement in the VHF band.

handbook, full pagewidth

V

meas

unwanted

signal

source

50 Ω

AM = 30%

e

u

50 Ω

e

w

wanted

signal

source

(1) N1 is 2 × 5 turns.
(2) N2 is 2 turns.

i=Vmeas

; V’

meas=Vo

V
Wanted input signal V

Measured level of the unwanted output signal V
unwanted f

= 412.75 MHz (860.75 MHz); Vou=V’

RF

AC

HYBRID

BD

50

Ω

−16 dB (transformer ratio and transformer loss).

=70dBµV at fRF= 407.25 MHz (855.25 MHz).

i

V

50 Ω

RMS

voltmeter

UHFIN1 IFOUT1

V

D.U.T.

IFOUT2UHFIN2

V

i

AC

HYBRID

BD

50

Ω

N1

5=

------- ­N2

causing 1% AM modulation in the wanted output signal;

ou

+16dB.

meas

18 dB

T

(1)

N1

o

C

attenuator

(2)

N2

V

FILTER

38.9 MHz

modulation
analyzer

50 Ω

MGL276

RMS

voltmeter

Fig.7 Cross modulation measurement in the UHF band.

1998 Mar 09 10

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

handbook, full pagewidth

C1

BNC BNC

L1 C2

(a) For fRF= 50 MHz:
VHF mixer frequency response measured = 57 MHz;
loss = 0 dB.
Image suppression = 16 dB.
C1 = 1 nF; C2 = 2.2 pF.
L1 = 7 turns (∅ 5.5 mm; wire ∅ = 0.5 mm).
I1 = semi rigid cable (RIM): 5 cm long.
(semi rigid cable (RIM); 33 dB/100 m; 50 Ω; 96 pF/m)

I1

RIM-RIM

PCB

plug plug

(a) (b)

.

TDA5744; TDA5745

I3

C3

I2

C4

(b) For fRF= 150 MHz:
VHF mixer frequency response measured = 150.3 MHz;
loss = 1.3 dB.
Image suppression = 13 dB.
C3 = 1 nF; C4 = 2.2 pF.
I2 = semi rigid cable (RIM): 30 cm long.
I3 = semi rigid cable (RIM): 5 cm long.
(semi rigid cable (RIM); 33 dB/100 m; 50 Ω; 96 pF/m).

RIM-RIM

PCB

MBE286 - 1

handbook, full pagewidth

Fig.8 Input circuit for optimum noise figure in the VHF band.

NOISE

SOURCE

BNC

RIM

INPUT

CIRCUIT

VHFIN

IFOUT1

D.U.T.

IFOUT2

T

C

NOISE

FIGURE

METER

MGL277

F=F

− loss (of input circuit) (dB).

meas

Fig.9 Noise figure (F) measurement in the VHF band.

1998 Mar 09 11

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

handbook, full pagewidth

NOISE

SOURCE

A

HYBRID

B

50 Ω

TDA5744; TDA5745

UHFIN1

C

D

UHFIN2

IFOUT1

D.U.T.

IFOUT2

T

C

NOISE

FIGURE

METER

MGL278

Loss (in hybrid) = 1 dB; F = F

− loss (in hybrid).

meas

Fig.10 Noise figure (F) measurement in the UHF band.

1998 Mar 09 12

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

handbook, full pagewidth

C1P1

UHFIN1

1 nF

C3

UHFIN2

1 nF

C6

1 nF

RFGND

15 pF

1

C11

2

C13

3

15 pF

D5

VHFL

LED-3R

D6

VHFH

LED-3Y

D7

UHF

LED-3G

for test purpose only

J5

TR1

BC847B

R18

1.2 kΩ

10 µF

C27 C28

(16 V)

R22

50 Ω

P9

V

ripple

R8

330 Ω

R10

330 Ω

R11

330 Ω

V

CC

+V

10 µF
(16 V)

UHF1

P2

UHF2

P3

VHF

L3

TOKO 7 km

L value/C value

7

6

4

8

J1

J2

J3

J4

VHFH

VHFL

PLL

UHF

V

CC

CC

VHFIN

IFFIL1

IFFIL2

n.c.

n.c.

n.c.

n.c.

n.c.

TDA5744; TDA5745

D3
BA792

L5
16 nH

R9

4.7 kΩ

7

8

tuning

voltage

P6

+5 V

P4

6

4

P8

L1

1 µH

R1 1.5 kΩ

R3 22 kΩ
R4 1.5 kΩ
R5 2.7 kΩ

R7

22 kΩ

L6
30 nH

OUT

IF

C24

10 nF

VHFH

VHFL

MGM467

R14
22 kΩ

R16
22 kΩ

C19

1 nF
C20

1 nF

C2D1BB149

150 pF

C4

2.2 pF
C7

2.2 pF
C8

2.2 pF

C12

1 pF
C14

1 pF
C16

1 pF
C17

1 pF

L9

80 nH

L8

80 nH

C22

10 nF

R21

22 kΩ

100

L2

D2

30 nH

BB152

C5

C9
pF

D4
BB149

C18
10 pF

4.7 nF

R2

L4

22

80 nH

kΩ

4.7 nF

R6
22 kΩ

C15

47 pF

for test purpose only

C21
18 pF

1234

AGND

+33 V

C10

1
2
3
L7

+V

CC

+V

CC

1 (24)

2 (23)

3 (22)

4 (21)

5 (20)

6 (19)

TDA5744

(TDA5745)

7 (18)

8 (17)

BS

9 (16)

10 (15)

11 (14)

12 (13)

(1) 24

(2) 23

(3) 22

(4) 21

(5) 20

(6) 19

(7) 18

(8) 17

(9) 16

(10) 15

(11) 14

(12) 13

VHFOSCIB2

VHFOSCOC2

VHFOSCOC1

VHFOSCIB1

UHFOSCIB2

UHFOSCOC2

UHFOSCOC1

UHFOSCIB1

GND

IFOUT2

IFOUT1

V

CC

The pin numbers in parenthesis represent the TDA5745.

Fig.11 Measurement circuit.

1998 Mar 09 13

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

Component values for measurement circuit
Table 1 Capacitors (all SMD and NP0 unless otherwise

specified)

COMPONENT VALUE

C1 1 nF
C2 150 pF
C3 1 nF
C4 2.2 pF (N750)
C5 4.7 nF
C6 1 nF
C7 2.2 pF (N750)
C8 2.2 pF (N750)
C9 100 pF (N750)
C10 4.7 nF
C11 15 pF
C12 1 pF (N750)
C13 15 pF
C14 1 pF (N750)
C15 47 pF
C16 1 pF (N750)
C17 1 pF (N750)
C18 10 pF (N750)
C19 1 nF
C20 1 nF
C21 18 pF
C22 10 nF
C24 10 nF
C27 10 µF (16 V; electrolytic)
C28 10 µF (16 V; electrolytic)

Table 2 Resistors (all SMD)

COMPONENT VALUE

R1 1.5 kΩ
R2 22 kΩ
R3 22 kΩ
R4 1.5 kΩ
R5 2.7 kΩ
R6 22 kΩ
R7 22 kΩ
R8 330 Ω
R9 4.7 kΩ

TDA5744; TDA5745

COMPONENT VALUE

R10 330Ω
R11 330 Ω
R14 22 kΩ
R16 22 kΩ
R18 1.2 kΩ
R21 22 kΩ
R22 50 Ω

Table 3 Diodes and ICs

COMPONENT VALUE

D1 BB149
D2 BB152
D3 BA792
D4 BB149
D5 LED-3R
D6 LED-3Y
D7 LED-3G
IC TDA5744; TDA5745

Table 4 Coils

COMPONENT VALUE

L1 1 µH (inductor)
L2 30 nH
L4 80 nH
L5 16 nH
L6 30 nH
L8 80 nH
L9 80 nH

Table 5 Transformer

COMPONENT VALUE

L3 23 turns (TOKO, wire 0.07 mm)
L7 N1 = 2 × 5 turns; N2 = 2 turns

(TOKO, wire 0.09 mm)

Table 6 Transistors

COMPONENT VALUE

TR1 BC847B

1998 Mar 09 14

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for

TDA5744; TDA5745

hyperband tuners

INTERNAL PIN CONFIGURATION

A VERAGE DC VOL TAGE

(V)

SYMBOL

PIN

CONFIGURATION

(1)

TDA5744 TDA5745 VHF UHF

UHFIN1 1 24 note 2 1.0
UHFIN2 2 23

1

(24)

2

(23)

MGM468

VHFIN 3 22 1.9 note 2

3

(22)

MGM469

RFGND 4 21 0.0 0.0

4

(21)

MGM470

IFFIL1 5 20 3.4 3.4

65 (19)(20)

IFFIL2 6 19

MGM471

n.c. 7 18 not connected note 2 note 2

817
10 15
11 14
12 13

BS 9 16 electronic band switch 0.0 5.0
V

CC

13 12 supply voltage 5.0 5.0

1998 Mar 09 15

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for

TDA5744; TDA5745

hyperband tuners

A VERAGE DC VOL TAGE

(V)

SYMBOL

PIN

CONFIGURATION

(1)

TDA5744 TDA5745 VHF UHF

IFOUT1 14 11 2.2 2.2
IFOUT2 15 10

14

(11)15(10)

MGM472

GND 16 9 0.0 0.0

16
(9)

MGM473

UHFOSCIB1 17 8 note 2 1.9
UHFOSCOC1 18 7 2.5
UHFOSCOC2 19 6 2.5

(7)
18

(6)
19

UHFOSCIB2 20 5 1.9

17

(8)

20
(5)

MGM474

VHFOSCIB1 21 4 2.0 note 2
VHFOSCOC1 22 3 2.7
VHFOSCOC2 23 2 2.7

(3)
22

(2)
23

VHFOSCIB2 24 1 2.0

21

(4)

24
(1)

MGM475

Notes

1. The pin numbers in parenthesis represent the TDA5745.

2. Not applicable.

1998 Mar 09 16

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

PACKAGE OUTLINE

SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm

D

c

y

Z

24 13

TDA5744; TDA5745

E

H

E

A

SOT340-1

X

v M

A

pin 1 index

112

w M

b

e

DIMENSIONS (mm are the original dimensions)

UNIT A

mm

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

2.0

0.21

0.05

1

A2A

1.80

1.65

0.25

b

3

p

0.38

0.25

p

cD

0.20

8.4

0.09

8.0

0 2.5 5 mm

scale

(1)E(1) (1)

eHELLpQZywv θ

5.4

0.65 1.25

5.2

7.9

7.6

Q

A

2

A

1

detail X

1.03

0.9

0.63

0.7

(A )

L

p

L

A

3

θ

0.13 0.10.2

0.8

0.4

o

8

o

0

OUTLINE
VERSION

SOT340-1 MO-150AG

IEC JEDEC EIAJ

REFERENCES

1998 Mar 09 17

EUROPEAN

PROJECTION

ISSUE DATE

93-09-08
95-02-04

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for
hyperband tuners

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

TDA5744; TDA5745

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Mar 09 18

Philips Semiconductors Preliminary specification

Low power mixers/oscillators for

TDA5744; TDA5745

hyperband tuners

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Mar 09 19

Philips Semiconductors – a worldwide company

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Tel. [phone], Fax. [phone]
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220050 MINSK, Tel. [phone], Fax. [phone]

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Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
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Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
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Indonesia: see Singapore
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TEL AVIV 61180, Tel. [phone], Fax. [phone]
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20124 MILANO, Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
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106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
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Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
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Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

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TAIPEI, Taiwan Tel. [phone], Fax. [phone]

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252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
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United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 545104/1200/01/pp20 Date of release: 1998Mar 09 Document order number: 9397 750 02946