Page 1
®
OPT210
FPO
MONOLITHIC PHOTODIODE AND AMPLIFIER
300kHz Bandwidth at RF = 1MΩ
FEATURES
● BOOTSTRAP ANODE DRIVE:
Extends Bandwidth: 900kHz (R
= 100KΩ)
F
Reduces Noise
● LARGE PHOTODIODE: 0.09" x 0.09"
● HIGH RESPONSIVITY: 0.45A/W
(650nm)
● EXCELLENT SPECTRAL RESPONSE
● WIDE SUPPLY RANGE:
±2.25 to ±18V
● TRANSPARENT DIP, SIP AND SURFACE-
MOUNT PACKAGES
APPLICATIONS
● BARCODE SCANNERS
● MEDICAL INSTRUMENTATION
● LABORATORY INSTRUMENTATION
● POSITION AND PROXIMITY DETECTORS
● PARTICLE DETECTORS
R
8
F
(1)
(SIP Pins)
OPT210
(4)
3
V–
(5)
5
V
O
V+
(3)
(2)
1
2
+1
λ
DIP Pins
DESCRIPTION
The OPT210 is a photodetector consisting of a high
performance silicon photodiode and precision FETinput transimpedance amplifier integrated on a single
monolithic chip. Output is an analog voltage proportional to light intensity.
The large 0.09" x 0.09" photodiode is operated at low
bias voltage for low dark current and excellent linearity. A novel photodiode anode bootstrap circuit reduces the effects of photodiode capacitance to extend
bandwidth and reduces noise.
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered with discrete
designs such as leakage current errors, noise pick-up
and gain peaking due to stray capacitance.
The OPT210 operates from ±2.25 to ±18V supplies
and quiescent current is only 2mA. Available in a
transparent 8-pin DIP, 8-lead surface-mount and 5-pin
SIP, it is specified for 0° to 70°C operation.
SPECTRAL RESPONSIVITY
Ultraviolet
0.5
0.4
0.3
0.2
Voltage Output (V/µW)
0.1
0
Using External
1MΩ Resistor
100 200 300 400 500 600 700 800 900 1000 1100
Blue
Wavelength (nm)
Green
Yellow
Red
Infrared
0.5
0.4
0.3
0.2
0.1
Photodiode Responsivity (A/W)
0
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
®
1
PDS-1313B
OPT210
Page 2
SPECIFICATIONS
At TA = +25°C, VS = ±15V, λ = 650nm, External RF = 1MΩ, RL = 10kΩ, unless otherwise noted.
OPT210P
OPT210W
PARAMETER CONDITIONS MIN TYP MAX UNITS
RESPONSIVITY
Photodiode Current λ = 650nm 0.45 A/W
Unit-to-Unit Variation ±5%
Voltage Output λ = 650nm, External R
Nonlinearity 0.01 % of FS
Photodiode Area (0.09 x 0.09in) 0.008 in
(2.29 x 2.29mm) 5.2 mm
DARK ERROR, RTO
Offset Voltage ±2 ±10 mV
vs Temperature ±35 µV/°C
vs Power Supply V
Voltage Noise BW = 0.01Hz to 100kHz 160 µVrms
= ±2.25V to ±18V 100 1000 µV/V
S
FREQUENCY RESPONSE
Bandwidth External R
Rise Time 10% to 90% 1.2 µs
Settling Time, 1% FS to Dark step 3 µs
0.1% 8 µs
0.01% 20 µs
Overload Recovery 100% Overdrive 7 µs
OUTPUT
Voltage Output, Positive R
Positive R
(1)
Capacitive Load, Stable Operation 500 pF
Short-Circuit Current
Negative
(2)
= 10kΩ (V+)–1.25 (V+)–0.75 V
L
L
RL = 10kΩ –0.4 –0.5 V
POWER SUPPLY
Operating Range ±2.25 ±18 V
Quiescent Current +2.0/–1.7 ±4mA
TEMPERATURE RANGE
Specification 070°C
Operating 070°C
Storage –25 85 °C
θ
JA
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive
current (sourcing) is limited. Negative current (sinking) is not limited.
= 1MΩ 0.45 V/µW
F
= 1MΩ 300 kHz
F
= 5kΩ (V+)–1
+50 mA
100 °C/W
2
2
PHOTODIODE SPECIFICATIONS
PHOTODIODE
PARAMETER CONDITIONS MIN TYP MAX UNITS
Photodiode Area (0.09 x 0.09in) 0.008 in
(2.29 x 2.29mm) 5.2 mm
Current Responsivity λ = 650nm 0.45 A/W
865 µA/W/cm
Dark Current VD = –1.2V 70 pA
vs Temperature Doubles every 10°C
Capacitance V
Effective Capacitance
(1)
= –1.2V 550 pF
D
VD = –1.2V 10 pF
NOTES: (1) Effect of photodiode capacitance is reduced by internal buffer bootstrap drive. See text
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
OPT210
2
2
2
2
Page 3
OP AMP SPECIFICATIONS
Op amp specifications provided for comparative information only.
OP AMP
PARAMETER CONDITIONS MIN TYP MAX UNITS
INPUT
Offset Voltage ±2mV
vs Temperature ±35 µV/°C
vs Power Supply 100 µV/V
Input Bias Current
Inverting Input 15 pA
vs Temperature Doubles every 10°C
Non-inverting Input 300 µA
NOISE
Voltage Noise
f = 10Hz 20 nV/√Hz
f = 100Hz 9 nV/√Hz
f = 1kHz 6 nV/√Hz
Current Noise Density, Inverting Input BW = 0.01Hz to 100kHz 0.8 fA/√Hz
INPUT VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection 65 dB
INPUT IMPEDANCE
Inverting Input Impedance 3x10
Non-Inverting Input Impedance 250 kΩ
OPEN-LOOP GAIN
Open-Loop Voltage Gain V
FREQUENCY RESPONSE
Bandwidth, Small Signal 35 MHz
Rise Time, Large Signal 10% to 90% 25 ns
Settling Time, 1% 10V step 240 ns
0.1% 390 ns
0.01% 800 ns
Overload Recovery 100% Overdrive 7 µs
OUTPUT
Voltage Output, Positive R
Positive R
Negative
Capacitive Load, Stable Operation 500 pF
Short-Circuit Current
POWER SUPPLY
Operating Voltage ±2.25 ±18 V
Quiescent Current +1.7/–1.4 ±4mA
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive
current (sourcing) is limited. Negative current (sinking) is not limited.
(1)
= 0V to +13.75V 70 dB
O
= 10kΩ (V+)–1.25 (V+)–0.75 V
L
= 5kΩ (V+)–1
(1)
(2)
L
RL = 10kΩ –0.4 –0.5 V
VS±2.25 V
10
||3 Ω || pF
+50 mA
BUFFER SPECIFICATIONS
Buffer specifications provided for comparative information only.
BUFFER
PARAMETER CONDITIONS MIN TYP MAX UNITS
INPUT
Offset Voltage
Input Bias Current 15 pA
vs Temperature Doubles every 10°C
Input Impedance 10
FREQUENCY RESPONSE
Bandwidth, Small Signal 500 MHz
OUTPUT
Current ±200 µA
Voltage Gain 0.99 V/V
POWER SUPPLY
Operating Range ±2.25 ±18 V
Quiescent Current ±0.3 mA
NOTE: (1) Intentional voltage offset to reverse bias photodiode.
(1)
3
–1.2 V
11
||3 Ω || pF
OPT210
®
Page 4
PIN CONFIGURATIONS
Top View DIP
1
V+
2
–In
(1)
3
V–
4
NC
NOTE: (1) Photodiode location.
Top View SIP
Common
1
V+
2
–In
3
V–
4
Output
5
NOTE: (1) Photodiode location.
(1)
8
7
6
5
Common
NC
NC
Output
ABSOLUTE MAXIMUM RATINGS
Supply Voltage................................................................................... ±18V
Input Voltage Range (Common Pin) .................................................... ±V
Output Short-Circuit (to ground)............................................... Continuous
Operating Temperature: P, W ........................................... –25°C to +85°C
Storage Temperature: P, W ........................................... –25°C to +85°C
Junction Temperature: P, W ..........................................................+85°C
Lead Temperature (soldering, 10s)................................................ +300°C
(Vapor-Phase Soldering Not Recommended on Plastic Packages)
S
PACKAGE INFORMATION
PRODUCT PACKAGE NUMBER
OPT210P 8-Pin Plastic DIP 006-5
OPT210P-J 8-Lead Surface Mount
OPT210W 5-Pin Plastic SIP 321-1
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book. (2) 8-pin DIP with leads
formed for surface mounting.
PACKAGE DRAWING
(2)
(1)
006-6
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
MOISTURE SENSITIVITY
AND SOLDERING
Clear plastic does not contain the structural-enhancing fillers
used in black plastic molding compound. As a result, clear
plastic is more sensitive to environmental stress than black
plastic. This can cause difficulties if devices have been stored
in high humidity prior to soldering. The rapid heating during
soldering can stress wire bonds and cause failures. Prior to
soldering, it is recommended that plastic devices be baked-out
at 85°C for 24 hours.
The fire-retardant fillers used in black plastic are not compatible with clear molding compound. The OPT210 plastic
packages cannot meet flammability test, UL-94.
®
OPT210
4
Page 5
TYPICAL PERFORMANCE CURVES
VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY
Responsivity (V/µW)
Frequency (Hz)
1k 10k 100k 1M 10M
100
10
1
0.1
0.01
R
F
= 100MΩ
RF = 10MΩ
RF = 1MΩ, CF = 0.5pF
RF = 100kΩ, CF = 1.8pF
At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.
1.0
NORMALIZED SPECTRAL RESPONSIVITY
0.8
650nm
(0.45A/W)
0.6
0.4
0.2
Normalized Current or Voltage Output
0
100 200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
VOLTAGE RESPONSIVITY vs IRRADIANCE
10
1
= 10MΩ
F
R
0.1
Output Voltage (V)
0.01
R
= 1MΩ
F
= 100kΩ
F
R
R
= 10kΩ
F
R
= 1kΩ
F
0.001
0.001 0.01 1 10 1000.1
Irradiance (W/m
2
)
(0.48A/W)
λ = 650nm
VOLTAGE RESPONSIVITY vs RADIANT POWER
10
1
= 10MΩ
F
R
0.1
Output Voltage (V)
0.01
0.001
0.01 0.1 10 100 1k1
= 1MΩ
F
R
= 100kΩ
F
R
Radiant Power (µW)
F
R
= 10kΩ
R
= 1kΩ
F
λ = 650nm
1.0
RESPONSE vs INCIDENT ANGLE
0.8
SIP Package
θ
X
0.6
0.4
θ
X
DIP Package
Plastic
Relative Response
0.2
0
0
±20 ±40 ±60 ±80
θ
Y
θ
Y
Incident Angle (°)
POWER SUPPLY REJECTION
vs FREQUENCY
1.0
θ
X
θ
Y
0.8
0.6
90
80
70
60
50
V–
40
0.4
0.2
0
30
20
10
Power Supply Rejection (dB)
0
V+
–10
1 10 100 1k 10k 100k 1M 10M
Frequency (Hz)
®
5
OPT210
Page 6
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.
3
QUIESCENT CURRENT vs TEMPERATURE
2
1
Quiescent Current (mA)
0
–75
–50 –25 0 25 50 75 100 125
+
I
Q
–
I
Q
+
I
Q
–
I
Q
Temperature (°C)
V
= ±15V
S
VS = ±2.25V
–2
10
Dashed lines indicate
noise measured beyond
the signal bandwidth.
–3
10
RF = 100MΩ
–4
10
–5
10
Noise Voltage (Vrms)
–6
10
–7
10
10 100 10k 100k 1M1k
OUTPUT NOISE VOLTAGE
vs MEASUREMENT BANDWIDTH
RF = 10MΩ
RF = 100kΩ
RF = 1MΩ
RF = 10kΩ
Frequency (Hz)
10M
SMALL-SIGNAL RESPONSE, RF = 1MΩ
Measurement BW = 1MHz
20mV/div
5µs/div
–7
10
Dashed lines indicate
noise measured beyond
–8
10
the signal bandwidth.
–9
10
–10
10
NOISE EFFECTIVE POWER
vs MEASUREMENT BANDWIDTH
λ = 650nm
LARGE-SIGNAL RESPONSE, RF = 1MΩ
2V/div
5µs/div
RF = 10kΩ
= 100kΩ
R
F
= 1MΩ
R
F
= 10MΩ
R
F
R
= 100MΩ
F
®
OPT210
–11
10
Noise Effective Power (W)
–12
10
–13
10
–14
10
10 100 10k 100k 1M1k
10M
Frequency (Hz)
6
Page 7
APPLICATIONS INFORMATION
Basic operation of the OPT210 is shown in Figure 1. Power
supply bypass capacitors should be connected near the
device pins as shown. Noise performance of the OPT210 can
be degraded by the high frequency noise on the power
supplies. Resistors in series with the power supply pins as
shown can be used (optional) to help filter power supply
noise
An external feedback resistor, R
terminal as shown in Figure 1. Feedback resistors of
the V
O
1MΩ or less require parallel capacitor, C
values in Figure 1.
+15V
1µF
100Ω
+
(2)
1
(3)
2
+1
λ
8
Optional series resistors filter
power supply noise. See text.
RFCF (min) BANDWIDTH
10MΩ (1) 70kHz
1MΩ 0.5pF 300kHz
100kΩ 1.8pF 900kHz
10kΩ 10pF 1.6MHz
1kΩ 20pF 1.6MHz
NOTE: (1) Two series-connected resistors of R
/2 for low capacitance. See text.
F
FIGURE 1. Basic Operation.
Bandwidth varies with feedback resistor value. To achieve
widest bandwidth with resistors greater than 1MΩ, use care
to minimize parasitic parallel capacitance. For widest
bandwidth with resistors greater than 2MΩ, connect two
resistors (RF/2) in series. Airwiring this interconnection
provides lowest capacitance. Although the OPT210 is usable
with feedback resistors of 100MΩ and higher, with
≥ 10MΩ the model OPT211 will provide lower dc errors
R
F
and reduced noise.
The OPT210’s output voltage is the product of the photodiode
current times the external feedback resistor, R
current, I
watts) falling on the photodiode. At a wavelength of 650nm
(visible red) the photodiode Responsivity, RI, is approximately
0.45A/W. Responsivity at other wavelengths is shown in the
typical performance curve “Responsivity vs Wavelength.”
, is proportional to the radiant power or flux (in
D
, is connected from –In to
F
. See the table of
F
(paracitic capacitance)
For RF > 2MΩ,
use series-connected
resistors. See text.
OPT210
5
(5)
3+(4)
1µF
–15V
F
(1)
C
R
F
F
100Ω
V
O
(0V to 14V)
. Photodiode
The typical performance curve “Output Voltage vs Radiant
Power” shows the response throughout a wide range of
radiant power and feedback resistor values. The response
curve “Output Voltage vs Irradiance” is based on the
photodiode area of 5.23x10–6m2.
BOOTSTRAP BUFFER
The photodiode’s anode is driven by an internal high speed
voltage buffer shown in Figure 1. This variation on the
classical transimpedance amplifier circuit reduces the effects
of photodiode capacitance. The effective photodiode
capacitance is reduced from approximately 550pF to 10pF
with this bootstrap drive technique. This improves bandwidth
and reduces noise.
The output voltage of the buffer is offset approximately
1.2V below the input. This reverse biases the photodiode for
reduced capacitance.
OP AMP
A special op amp design is used to achieve wide bandwidth.
The op amp output voltage cannot swing lower than 0.5V
below the non-inverting input voltage. Since photodiode
current always produces a positive output voltage, this does
not limit the required output swing.
The inverting input is designed for very low input bias
current—approximately 15pA. The non-inverting input has
much larger bias current—approximately 300µA flows out
of this terminal.
100µA
1/2 REF200
200Ω
200Ω
100µA
1/2 REF200
λ
+15V
–15V
0.1µF
+15V
1
10kΩ
(2)
2
+1
OPA131
R
F
1MΩ
(3)
OPT210
5
(5)
Output voltage
offset by V
8
V
±20mV
(1)
300µA
A
3
–15V
(4)
0.1µF
FIGURE 2. Adjustable Output Offset.
An offset voltage can be connected to the non-inverting
input as shown in Figure 2. A voltage applied to the noninverting input is summed at the output. Because the noninverting input bias current is high (approximately 300µA),
it should be driven by a low impedance such as the bufferconnected op amp shown.
7
OPT210
V
O
A
®
Page 8
The OPT210 can be connected to operate from a single
power supply as shown in Figure 3. The non-inverting input
bias current flows through a zener diode to provide a bias
voltage. The output voltage is referenced to this bias point.
cosine of the incident angle). At a greater incident angle,
light is diffused by the side of the package. These effects are
shown in the typical performance curve, “Response vs
Incident Angle.”
0.1µF
+15V
1
(2)
(3)
2
+1
R
F
OPT210
VO measured
relative to 5.6V
zener voltage.
5
(5)
V
O
λ
(5.6V)
1µF
(4)
3
ZD1: IN4626 5.6V
specified at I
≈300µA
= 250µA
Z
ZD
(1)
8
+
1
FIGURE 3. Single Power Supply Operation.
DARK ERRORS
The dark errors in the specification table include all sources
with R
= 1MΩ. The dominant error source is the input
F
offset voltage of the op amp. Photodiode dark current is
approximately 70pA and the combined input bias current of
the op amp and buffer is approximately 30pA. Photodiode
dark current and input bias current total approximately
100pA at 25°C and double for each 10°C above 25°C. At
70°C, the total error current is approximately 2nA. With
= 1MΩ, this would produce a 2mV offset voltage in
R
F
addition to the initial amplifier offset voltage (10mV max)
at 25°C. The dark output voltage can be trimmed to zero
with the optional circuit shown in Figure 2.
LIGHT SOURCE POSITIONING
The OPT210 is tested with a light source that uniformly
illuminates the full integrated circuit area, including the op
amp. Although all IC amplifiers are light sensitive to some
degree, the OPT210 op amp circuitry is designed to minimize
this effect. Sensitive junctions are shielded with metal where
possible. Furthermore, the photodiode area is very large
compared to the op amp circuitry making these effects
negligible.
If your light source is focused to a small area, be sure that
it is properly aimed to fall on the photodiode. If a narrowly
focused light source were to miss the photodiode and fall on
the op amp circuitry, the OPT210 would not perform properly.
The large photodiode area is clearly visible as a very dark
area slightly offset from the center of the IC.
The incident angle of the light source also affects the
apparent sensitivity in uniform irradiance. For small incident
angles, the loss in sensitivity is due to the smaller effective
light gathering area of the photodiode (proportional to the
LINEARITY PERFORMANCE
Photodiode current is very linear with radiant power
throughout its range. Nonlinearity remains below
approximately 0.01% up to 200µA. The anode buffer drive,
however, is limited to approximately 200µA. This produces
an abrupt limit to photodiode output current when radiant
power reaches approximately 450µW.
Best linearity is achieved with the photodiode uniformly
illuminated. A light source focused to a very small beam,
illuminating only a small percentage of the photodiode area,
may produce a higher nonlinearity.
NOISE PERFORMANCE
Noise performance of the OPT210 is determined by the op
amp characteristics in conjunction with the feedback
components, photodiode capacitance, and buffer performance.
The typical performance curve “Output Noise Voltage vs
Measurement Bandwidth” shows how the noise varies with
and measured bandwidth (0.1Hz to the indicated
R
F
frequency). The signal bandwidth of the OPT210 is indicated
on the curves. Noise can be reduced by filtering the output
with a cutoff frequency equal to the signal bandwidth.
Output noise increases in proportion to the square-root of the
feedback resistance, while responsivity increases linearly
with feedback resistance. So best signal-to-noise ratio is
achieved with large feedback resistance. This comes with
the trade-off of decreased bandwidth.
The noise performance of a photodetector is sometimes
characterized by Noise Effective Power (NEP). This is the
radiant power which would produce an output signal equal
to the noise level. NEP has the units of radiant power
(watts), or Watts/√Hz to convey spectral information about
the noise. The typical performance curve “Output Noise
Voltage vs Measurement Bandwidth” is also scaled for NEP
on the right-hand side.
®
OPT210
8
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