Datasheets LSK389 Datasheet

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]

Doc 201122 5/02/2014 Rev#A7 ECN# LSK389

FEATURES

ULTRA LOW NOISE

en = 0.9nV/√Hz (typ)

TIGHT MATCHING

IV

GS1-2I

= 20mV max

HIGH BREAKDOWN VOLTAGE

BV

GSS

= 40V max

HIGH GAIN

Gfs = 20mS (typ)

LOW CAPACITANCE

25pF typ

IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

ABSOLUTE MAXIMUM RATINGS1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +150°C

Junction Operating Temperature

-55 to +135°C

Maximum Power Dissipation

Continuous Power Dissipation @ +25°C

400mW

Maximum Currents

Gate Forward Current

I

G(F)

= 10mA

Maximum Voltages

Gate to Source

V

GSS

= 40V

Gate to Drain

V

GDS

= 40V

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNITS

CONDITIONS

GS2GS1 VV 

Differential Gate to Source Cutoff
Voltage

20 mV

VDS = 10V, ID = 1mA

DSS2

DSS1

I

I

Gate to Source Saturation Current Ratio

0.9

---

VDS = 10V, V

GS

= 0V

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNITS

CONDITIONS

BV

GSS

Gate to Source Breakdown Voltage

-40 V VDS = 0, ID = -100µA

V

GS(OFF)

Gate to Source Pinch-off Voltage

-0.15 -2 V VDS = 10V, ID = 0.1µA

I

DSS

Drain to Source Saturation
Current

LSK389A

2.6 6.5

mA

VDS = 10V, V

GS

= 0

LSK389B

6 12

LSK389C

10 20

LSK389D

17 30

I

GSS

Gate to Source Leakage Current

-200

pA

VGS = -30V, V

DS

= 0

I

G1G2

Gate to Gate Isolation Current

±1.0

µA

VG1-G2 = ±45V, ID = IS = 0A

LSK389

ULTRA LOW NOISE
MONOLITHIC DUAL

N-CHANNEL JFET AMPLIFIER

TO-71

Top View

SOIC-A

Top View

* For equivalent single version, see LSK170 family

Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: [phone] • Fax: [phone]

Doc 201122 5/02/2014 Rev#A7 ECN# LSK389

ELECTRICAL CHARACTERISTICS CONT. @ 25°C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNITS

CONDITIONS

Gfs

Full Conduction Transconductance

8

20 mS

VDS = 10V, VGS = 0, f = 1kHz

en

Noise Voltage

0.9

1.9

Nv/√Hz

VDS = 10V, ID = 2mA, f = 1kHz,
NBW = 1Hz

en

Noise Voltage

2.5 4 Nv/√Hz

VDS = 10V, ID = 2mA, f = 10Hz,
NBW = 1Hz

C

ISS

Common Source Input Capacitance

25 pF

VDS = 10V, VGS = 0, f = 1MHz,

C

RSS

Common Source Reverse Transfer Cap.

5.5 pF

VDG = 10V, ID = 0, f = 1MHz,

A

ORDERING INFORMATION

SOIC-8

LSK389 - -

I

DSS

Range

A

B
C
D

2.6 - 6.5 mA
6 - 12 mA
10 - 20 mA
17 - 30 mA

Package

TO-71

SOIC-8

TO-71 6L
SOIC-A 8L

1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.

NOTES:

Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.

PACKAGE DIMENSIONS

TO-71

SOIC-A

Note: All Dimensions in inches

0.210

0.170