DATASHEETS BLA1011-200 DATASHEETS (Philips)

DISCRETE SEMICONDUCTORS

DATA SHEET

ook, halfpage

M3D379

BLA1011-200

Avionics LDMOS transistor

Preliminary specification 2000 Aug 02

Philips Semiconductors Preliminary specification

Avionics LDMOS transistor BLA1011-200

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on mounting base eliminates DC isolators,

reducing common mode inductance

APPLICATIONS

• Avionics transmitter applications in the
1030 to 1090 MHz frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flang package
(SOT502A) with a ceramic cap. The common source is
connected to the flange.

PINNING - SOT502A

PIN DESCRIPTION

1drain
2gate
3 source, connected to flange

ok, halfpage

Top view

1

2

Fig.1 Simplified outline.

3

MBK394

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

Pulsed class-AB;

=50µs; δ =2%

t

p

=25°C in a common source test circuit.

h

f

(MHz)

1030 - 1090 36 200 >13 >45

V

(V)

DS

P

(W)

L

G

p

(dB)

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GS

I

D

P

tot

T

stg

T

j

drain-source voltage − 75 V
gate-source voltage −±20 V
drain current (DC) − tbd A
total power dissipation Th≤ 25 °C − 700 W
storage temperature −65 150 °C
junction temperature − 200 °C

η

(%)

D

2000 Aug 02 2

Philips Semiconductors Preliminary specification

Avionics LDMOS transistor BLA1011-200

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Z

th j-h

Note

1. Thermal resistance is determined under RF operating conditions; t

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GSth

I

DSS

I

DSX

I

GSS

g

fs

R

DSon

thermal impedance from junction to heatsink Th=25°C, note 1 0.15 K/W

=50µs, δ =10%.

p

drain-source breakdown voltage VGS=0; ID=3mA 75 −−V
gate-source threshold voltage VDS=10V; ID= 300 mA 4 − 5V
drain-source leakage current VGS=0; VDS=36V −−1mA
on-state drain current VGS=V

+9V; VDS=10V 45 −−A

GS(th)

gate leakage current VGS= ±20 V; VDS=0 −−1 µA
forward transconductance VDS=10V; ID=10A − 9 − S
drain-source on-state resistance VGS=9V; ID=10A − 60 − mΩ

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. T

MODE OF OPERATION

Pulsed class-AB;
tp=50µs; δ =2%

f

(MHz)

1030 - 1090 36 150 200 >13 >45

=25°C; Z

h

V

DS

(V)

= 0.15 K/W, unless otherwise specified.

th mb-h

I

DQ

(mA)

P

(W)

L

G

(dB)

p

η

D

(%)

2000 Aug 02 3

Philips Semiconductors Preliminary specification

Avionics LDMOS transistor BLA1011-200

PACKAGE OUTLINE

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

D

A

3

D

1

U

1

q

1

H

U

2

A

2

b

w

M M

C

2

0 5 10 mm

scale

F

B

C

L

p

w

M M M

AB

1

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.99

0.186

0.157

OUTLINE
VERSION

SOT502A

12.83

12.57

0.505

0.495

c

Db

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC EIAJ

D

1

EE

9.50

9.53

9.30

9.25

0.375

0.374

0.364

0.366

REFERENCES

1

0.045

0.035

F

1.14

0.89

H

19.94

18.92

0.785

0.745

L

5.33

4.32

0.210

0.170

p

3.38

3.12

0.133

0.123

Q

1.70

1.45

0.067

0.057

qw

U

1

34.16

33.91

1.345

1.335

EUROPEAN

PROJECTION

U

2

9.91

9.65

0.390

0.380

w

1

0.25 0.5127.94

0.01 0.021.100

ISSUE DATE

2

99-10-13
99-12-28

2000 Aug 02 4

Philips Semiconductors Preliminary specification

Avionics LDMOS transistor BLA1011-200

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2000 Aug 02 5

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Printed in The Netherlands budgetnum/printrun/ed/pp6 Date of release: 2000 Aug 02 Document order number: 9397 750 07326