DATASHEETS bc856t, bc857t DATASHEETS (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D173

BC856T; BC857T series

PNP general purpose transistors

Product specification
Supersedes data of 1999 Apr 26

2000 Nov 15

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 65 V).

APPLICATIONS

• General purposeswitching and amplification, especially
in portable equipment.

DESCRIPTION

PNP transistor in an SC-75 (SOT416) plastic package.
NPN complements: BC846T; BC847T series.

MARKING

TYPE NUMBER MARKING CODE

BC856AT 3A
BC856BT 3B
BC857AT 3E
BC857BT 3F
BC857CT 3G

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

12

Top view

3

1

Fig.1 Simplified outline (SC-75; SOT416) and

symbol.

3

2

MAM362

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BC856AT; BC856BT −−80 V
BC857AT; BC857BT; BC857CT −−50 V

V

CEO

collector-emitter voltage open base

BC856AT; BC856BT −−65 V
BC857AT; BC857BT; BC857CT −−45 V

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T

≤ 25 °C; note 1 − 150 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

2000 Nov 15 2

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BE

C

c

C

e

f

T

F noise figure I

thermal resistance from junction to ambient in free air; note 1 833 K/W

collector-base cut-off current VCB= −30 V; IE=0 −−−15 nA

V

= −30 V; IE= 0; Tj= 150 °C −−−5µA

CB

emitter cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain VCE= −5 V; IC= −2mA

BC856AT; BC857AT 125 − 250
BC856BT; BC857BT 220 − 475
BC857CT 420 − 800

collector-emitter saturation
voltage

IC= −10 mA; IB= −0.5 mA −−−200 mV
I

= −100 mA; IB= −5 mA; note 1 −−−400 mV

C

base-emitter voltage IC= −2 mA; VCE= −5V −580 −−700 mV

I

= −10 mA; VCE= −5V −−−770 mV

C

collector capacitance VCB= −10 V; f = 1 MHz; IE=ie=0 −−2.5 pF
emitter capacitance VEB= −0.5 V; f = 1 MHz; IC=ic=0 − 10 − pF
transition frequency IC= −10 mA; VCE= −5V;

100 −−MHz

f = 100 MHz

= −200 µA; VCE= −5V;

C

−−10 dB

RS=2kΩ; f = 1 kHz; B = 200 Hz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2000 Nov 15 3

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

GRAPHICAL INFORMATION BC857AT

500

handbook, halfpage

h

FE

400

300

200

100

0

−10−2−10

VCE= −5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.2 DC current gain; typical values.

(1)

(2)

(3)

−1

−1 −10 −10

MGT711

2

IC (mA)

−10

−1200

handbook, halfpage

V

BE

(mV)

MGT712

−1000

−800

(1)

(2)

−600

−400

(3)

−200

3

0

−10−2−10

−1

−1 −10 −102−10

3

IC (mA)

VCE= −5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

4

−10

handbook, halfpage

V

CEsat

(mV)

3

−10

2

−10

−10

−1

−10

(1)

(2)(3)

−1 −10 −10

MGT713

2

IC (mA)

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

−10

−1200

handbook, halfpage

V

BEsat
(mV)

−1000

−800

−600

(1)

(2)

(3)

MGT714

−400

−200

0

3

−10

−1

−1 −10 −10

2

−10

3

IC (mA)

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

2000 Nov 15 4

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

GRAPHICAL INFORMATION BC857BT

1000

handbook, halfpage

h

FE

800

600

400

200

0

−10−2−10

VCE= −5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.6 DC current gain; typical values.

(1)

(2)

(3)

−1

−1 −10 −102−10

MGT715

IC (mA)

−1200

handbook, halfpage

V

BE

(mV)

MGT716

−1000

−800

(1)

(2)

−600

−400

(3)

−200

0

3

−10

−2

−10

−1

−1 −10 −102−10

3

IC (mA)

VCE= −5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

4

−10

handbook, halfpage

V

CEsat

(mV)

3

−10

2

−10

−10

−1

−10

(1)

(3)

(2)

−1 −10 −10

MGT717

2

IC (mA)

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

−10

−1200

handbook, halfpage

V

BEsat
(mV)

MGT718

−1000

−800

(1)

(2)

−600

(3)

−400

−200

0

3

−10

−1

−1 −10 −10

2

−10

3

IC (mA)

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

2000 Nov 15 5

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

GRAPHICAL INFORMATION BC857CT

1000

handbook, halfpage

h

FE

800

600

400

200

0

−10−2−10

VCE= −5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.10 DC current gain; typical values.

(1)

(2)

(3)

−1

−1 −10 −102−10

MGT719

IC (mA)

−1200

handbook, halfpage

V

BE

(mV)

MGT720

−1000

−800

(1)

(2)

−600

−400

(3)

−200

0

3

−10

−1

−1 −10 −10

2

−10

3

IC (mA)

VCE= −5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.11 Base-emitter voltage as a function of

collector current; typical values.

4

−10

handbook, halfpage

V

CEsat
(mV)

3

−10

2

−10

−10

−1

−10

(1)

(2)

(3)

−1 −10 −10

MGT721

2

IC (mA)

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.12 Collector-emitter saturation voltage as a

function of collector current; typical values.

−10

−1200

handbook, halfpage

V

BEsat

(mV)

MGT722

−1000

−800

(1)

(2)

−600

(3)

−400

−200

3

0

−10

−1

−1 −10 −10

2

−10

3

IC (mA)

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

2000 Nov 15 6

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT416

D

v M

A

3

12

e

b

1

p

e

w M

B

E

H

E

A

A

1

detail X

AB

L

p

X

Q

c

0 0.5 1 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

0.95

mm

0.60

OUTLINE

VERSION

SOT416 SC-75

max

0.1

b

cD

p

0.30

0.25

0.10

1.8

1.4

0.15

IEC JEDEC EIAJ

E

0.9

0.7

REFERENCES

e

e

1

0.5

1

2000 Nov 15 7

H

E

1.75

1.45

L

Qw

p

0.45

0.15

0.23

0.13

v

0.2

0.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification Thisdata sheet contains preliminary data, and supplementary datawill be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition Limiting valuesgiven are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atany other conditionsabovethose giveninthe
Characteristics sectionsof the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warrantythat suchapplicationswill be
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto resultin personalinjury. Philips
Semiconductorscustomers using orselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyofthese products, conveysnolicence or title
under any patent, copyright, or mask work right to these
products,and makesno representationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2000 Nov 15 8

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

NOTES

2000 Nov 15 9

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

NOTES

2000 Nov 15 10

Philips Semiconductors Product specification

PNP general purpose transistors BC856T; BC857T series

NOTES

2000 Nov 15 11

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2000

Internet: http://www.semiconductors.philips.com

70

Printed in The Netherlands 613514/03/pp12 Date of release: 2000 Nov 15 Document order number: 9397 750 07525