Page 1
A
AOU404, AOU404L (Green Product)
T
T
N-Channel Enhancement Mode Field Effect Transistor
Aug 2004
General Description
The AOU404 uses advanced trench technology and
design to provide excellent R
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
AOU404L (Green Product) is offered in a lead-free
package.
O-251
op View
Drain Connected
to Tab
G D S
Absolute Maximum Ratings T
Drain-Source Voltage 75
T
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
=25°C
C
=100°C I
T
C
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
=100°C
T
C
Junction and Storage Temperature Range
with low gate
DS(ON)
=25°C unless otherwise noted
A
Symbol
V
DS
V
GS
D
I
DM
I
C
AR
E
AR
P
D
TJ, T
STG
Features
VDS (V) = 75V
I
= 10 A
D
< 130 mΩ (VGS = 20V) @ 5A
R
DS(ON)
< 140 mΩ (VGS = 10V)
R
DS(ON)
< 165 mΩ (VGS = 4.5V)
R
DS(ON)
G
Maximum UnitsParameter
10
10
20
10
15
20
10
-55 to 175
D
S
V
V±25Gate-Source Voltage
A
A
mJ
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJC
115 140
4.5 7.5
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Page 2
AOU404, AOU404L
Ω
Ω
A
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
=10mA, VGS=0V
I
D
=60V, VGS=0V
V
DS
V
=0V, VGS=±20V
DS
DS=VGS, ID
=10V, VDS=5V
V
GS
V
=20V, ID=5A
GS
V
=10V, ID=5A
GS
=4.5V, ID=2A
V
GS
=5V, ID=10A
V
DS
I
=1A, VGS=0V
S
=250µA
=55°C
T
J
=125°C
T
J
75 V
1
5
µA
100 nA
1 2.4 3 V
20 A
100 130
180 220
105 140
120 165
mΩ
m
m
9S
0.79 1 V
10 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=30V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
293 350 pF
51 pF
20 pF
2.2 3 Ω
SWITCHING PARAMETERS
(10V)
Q
g
(4.5V)
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
: The value of R
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device in a still air environment with T
θJA
is the sum of the thermal impedence from junction to case R
θJA
is based on T
D
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=175°C.
J(MAX)
V
=10V, VDS=37.5V, ID=5A
GS
V
=10V, VDS=37.5V, RL=7.5Ω,
GS
R
=3Ω
GEN
I
=5A, dI/dt=100A/µs
F
=5A, dI/dt=100A/µs
I
F
=25°C.
A
=175°C.
J(MAX)
and case to ambient.
θJC
5.2 6.5 nC
2.46 3.5 nC
1nC
1.34 nC
4.6 ns
2.3 ns
14.7 ns
1.7 ns
25
30 ns
27 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
Page 3
AOU404, AOU404L
S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
(A)
D
I
30
25
20
15
10
5
7V
10V
6V
5V
4.5V
VGS=4V
3.5V
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
220
200
180
)
Ω
160
(m
140
DS(ON)
R
VGS=4.5V
VGS=10V
120
100
VGS=20V
10
VDS=5V
125°C
25°C
(A)
D
I
8
6
4
2
0
2 2.5 3 3.5 4 4.5 5
(Volts)
V
GS
Figure 2: Transfer Characteristics
2.2
2
1.8
VGS=20V, 5A
VGS=10V, 5A
1.6
1.4
1.2
Normalized On-Resistance
1
VGS=4.5V, 2A
80
0246810
(A)
I
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
260
ID=5A
)
Ω
(m
DS(ON)
R
240
220
200
180
160
125°C
25°C
140
120
100
46810
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
125°C
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
(Volts)
V
SD
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
Page 4
AOU404, AOU404L
S
-
ss
o
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
10
8
VDS=37.5V
I
=5A
D
6
(Volts)
GS
4
V
2
0
0246
Q
(nC)
g
Figure 7: Gate-Charge Characteristics
100.0
T
=175°C, TA=25°C
J(Max)
10µs
R
10.0
DS(ON)
limited
(Amps)
D
I
1.0
1ms
100µs
10ms
DC
400
350
C
iss
300
250
200
150
Capacitance (pF)
100
50
C
oss
C
r
0
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
200
160
T
T
J(Max)
A
=175°C
=25°C
120
80
Power (W)
40
0.1
0.1 1 10 100
V
(Volts)
DS
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
T
J,PK=TC+PDM.ZθJC.RθJC
R
=7.5°C/W
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
Case (Note F)
1
P
T
n
T
Normalized Transient
JC
θ
Z
0.1
Thermal Resistance
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
Page 5
AOU404, AOU404L
S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
12
IL
⋅
10
8
6
4
TA=25°C
2
(A), Peak Avalanche Current
D
I
0
0.00001 0.0001 0.001
Time in avalanche, t
Figure 12: Single Pulse Avalanche capability
12
10
(A)
D
8
6
4
Current rating I
2
t
=
A
D
VBV
−
DD
(s)
A
25
20
15
10
Power Dissipation (W)
5
0
0 25 50 75 100 125 150 175
(°C)
T
Figure 13: Power De-rating (Note B)
CASE
0
0 25 50 75 100 125 150 175
T
(°C)
Figure 14: Current De-rating (Note B)
CASE
Alpha & Omega Semiconductor, Ltd.
Page 6
UNIT: mm
RECOMMENDATION OF HOLE PATTERN
Page 7
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
DPAK(TO-251) PACKAGE MARKING DESCRIPTION
Document No.
Version
Title
PD-00266
rev A
AOU404 Marking Description
U 4 0 4
Standard product
NOTE:
LOGO - AOS LOGO
U404 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE
U 4 0 4
Green product
AOU404
AOU404L
DESCRIPTIONPART NO.
Standard product
Green product
CODE
U404
U404
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