Page 1
AOU402, AOU402L (Green Product)
T
T
N-Channel Enhancement Mode Field Effect Transistor
June 2004
General Description
The AOU402 uses advanced trench technology and
design to provide excellent R
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
AOU402L(Green Product) is offered in a lead-free
with low gate
DS(ON)
Features
VDS (V) = 60V
I
= 12 A
D
< 60 mΩ (VGS = 10V)
R
DS(ON)
< 85 mΩ (VGS = 4.5V)
R
DS(ON)
package.
O-251
D
op View
Drain Connected
G D S
Absolute Maximum Ratings T
to Tab
=25°C unless otherwise noted
A
G
S
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
=25°C
C
=100°C
T
C
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
=100°C
T
C
Junction and Storage Temperature Range
V
DS
V
GS
60 V
±20 V
12
I
D
I
DM
I
C
AR
E
AR
P
D
TJ, T
STG
12
30
12
23 mJ
20
10
-55 to 175
A
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
A
Steady-State
Steady-State
R
θJA
R
θJC
100 125
4 7.5
Symbol Typ Max
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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AOU402, AOU402L
Ω
A
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
=10mA, VGS=0V
I
D
=48V, VGS=0V
V
DS
V
=0V, VGS=±20V
DS
DS=VGS, ID
=10V, VDS=5V
V
GS
V
=10V, ID=12A
GS
V
=4.5V, ID=6A
GS
=5V, ID=12A
V
DS
I
=1A, VGS=0V
S
=250µA
=55°C
T
J
=125°C
T
J
60 V
1
5
µA
100 nA
1 2.4 3 V
30 A
47 60
85
67 85
mΩ
m
14 S
0.74 1 V
12 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=30V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
385 540 pF
55 pF
20 pF
1.35 2 Ω
SWITCHING PARAMETERS
(10V)
Q
g
(4.5V)
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
: The value of R
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device in a still air environment with T
θJA
is the sum of the thermal impedence from junction to case R
θJA
is based on T
D
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=175°C.
J(MAX)
V
=10V, VDS=30V, ID=12A
GS
V
=10V, VDS=30V, RL=2.5Ω,
GS
R
=3Ω
GEN
I
=12A, dI/dt=100A/µs
F
=12A, dI/dt=100A/µs
I
F
=25°C.
A
=175°C.
J(MAX)
and case to ambient.
θJC
7.5 10 nC
3.8 5 nC
1.2 nC
1.9 nC
4.2 ns
3.4 ns
16 ns
2ns
27.6
35 ns
30 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOU402, AOU402L
S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
30
25
20
15
(A)
D
I
10
5
7V
10V
6V
5V
4.5V
VGS=4V
3.5V
0
012345
(Volts)
V
DS
Fig 1: On-Region Characteristics
80
)
Ω
(m
DS(ON)
R
70
60
VGS=4.5V
VGS=10V
50
20
VDS=5V
15
10
(A)
D
I
125°C
25°C
5
0
2 2.5 3 3.5 4 4.5 5
V
(Volts)
GS
Figure 2: Transfer Characteristics
2.2
2
1.8
VGS=10V, 12A
1.6
1.4
1.2
VGS=4.5V,6A
40
048121620
I
(A)
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
)
Ω
(m
DS(ON)
R
140
120
125°C
100
80
25°C
ID=12A
60
40
46810
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
125°C
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
(Volts)
SD
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
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AOU402, AOU402L
S
s
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
10
VDS=30V
=12A
I
8
D
6
(Volts)
GS
4
V
2
0
02468
Q
(nC)
g
Figure 7: Gate-Charge Characteristics
100.0
T
=175°C, TA=25°C
J(Max)
10µs
R
DS(ON)
limited
10.0
(Amps)
D
I
1.0
100µs
1ms
10ms
DC
700
600
C
500
iss
400
300
C
Capacitance (pF)
200
100
oss
C
rs
0
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
200
T
T
J(Max)
A
=175°C
=25°C
160
120
80
Power (W)
40
0.1
0.1 1 10 100
(Volts)
V
Figure 9: Maximum Forward Biased Safe
DS
Operating Area (Note F)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJC.RθJC
R
=7.5°C/W
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
1
0.1
Normalized Transient
Thermal Resistance
JC
θ
Z
P
T
on
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
Page 5
AOU402, AOU402L
S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
14
12
t
=
10
8
6
4
TA=25°C
2
(A), Peak Avalanche Current
D
I
0
0.00001 0.0001 0.001
Time in avalanche, t
Figure 12: Single Pulse Avalanche capability
14
12
10
(A)
D
8
6
4
Current rating I
2
A
IL
⋅
D
VBV
−
DD
(s)
A
25
20
15
10
Power Dissipation (W)
5
0
0 25 50 75 100 125 150 175
T
(°C)
Figure 13: Power De-rating (Note B)
CASE
0
0 25 50 75 100 125 150 175
(°C)
T
Figure 14: Current De-rating (Note B)
CASE
Alpha & Omega Semiconductor, Ltd.
Page 6
UNIT: mm
RECOMMENDATION OF HOLE PATTERN
Page 7
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
DPAK(TO-251) PACKAGE MARKING DESCRIPTION
Document No.
Version
Title
PD-00247
rev B
AOU402 Marking Description
U 4 0 2
Standard product
NOTE:
LOGO - AOS LOGO
U402 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE
U 4 0 2
Green product
AOU402
AOU402L
DESCRIPTIONPART NO.
Standard product
Green product
CODE
U402
U402
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