Datasheets aod606 Datasheet

A

A

A

A

AOD606

-

p

Complementary Enhancement Mode Field Effect Transistor

General Description

The AOD606 uses advanced trench
technology MOSFETs to provide excellent

and low gate charge. The

R

DS(ON)

complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.

free (meets ROHS & Sony 259 specifications).
AOD606L is a Green Product ordering option.
AOD606 and AOD606L are electrically
identical.

Standard product AOD606 is Pb

TO-252-4L
D-PAK

D1/D2

Top View
Drain Connected to
Tab

Features

n-channel p-channel

(V) = 40V -40V

V

DS

I

= 8A (VGS=10V) -8A (VGS = -10V)

D

R

DS(ON) RDS(ON)

< 33 mΩ (VGS=10V) < 50 mΩ (VGS = -10V)
< 47 mΩ (V

=4.5V) < 70 mΩ (VGS = -4.5V)

GS

D1/D2

G1

S1

n-channel

S1 G1 S2 G2

Absolute Maximum Ratings T
Parameter Max n-channel

Drain-Source Voltage

Continuous Drain

Current

G

Pulsed Drain Current

Avalanche Current

TC=25°C

TC=100°C

C

C

Repetitive avalanche energy L=0.1mH

TC=25°C

Power Dissipation

B

=100°C

T

C

TA=25°C

Power Dissipation

A

TA=70°C

Junction and Storage Temperature Range

=25°C unless otherwise noted

A

Symbol Max p-channel Units

V

DS

V

GS

I

D

I

DM

I

C

AR

E

AR

P

D

P

DSM

T

, T

J

STG

40

±20Gate-Source Voltage

8

8

30

8

20

20

10

1.3

-55 to 175

Thermal Characteristics: n-channel and p-channel
Parameter

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

B

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

B

t ≤ 10s
Steady-State
Steady-State

t ≤ 10s
Steady-State
Steady-State

Symbol Device Typ Max

R

θJA

R

θJC

R

θJA

R

θJC

n-ch 17.4 30 °C/W
n-ch 50 60 °C/W
n-ch 4 7.5 °C/W

p-ch 16.7 25 °C/W
p-ch 40 50 °C/W
p-ch 2.5 3 °C/W

G2

-channel

S2

-40

±20

8

8

-30

-8

30

50

25

2.52

1.6

-55 to 175

V

V

A

A

mJ

W

W

°C

Alpha & Omega Semiconductor, Ltd.

AOD606

N-Channel MOSFET Electrical Characteristics (T

Symbol Min Typ Max Units

Parameter Conditions

=25°C unless otherwise noted)

J

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage V

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

I

=10mA, VGS=0V

D

=32V, VGS=0V

V

DS

V

=0V, VGS=±20V

DS

DS=VGS, ID

V

=10V, VDS=5V

GS

=10V, ID=8A

V

GS

=4.5V, ID=6A

V

GS

V

=5V, ID=8A

DS

I

=1A, VGS=0V

S

=250µA

T

J

=125°C

T

J

=55°C

40 V

1

µA

5

100 nA

1 2.3 3 V

30 A

27 33

39 52

37 47

mΩ

m

25 S

0.76 1 V

8A

Ω

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

V

=0V, VDS=20V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

404 pF

95 pF

37 pF

2.7 Ω

SWITCHING PARAMETERS

(10V)

Q

g

Q

(4.5V)

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R

Power dissipation P
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T

D. The R

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
curve provides a single pulse rating.
Rev 0: January 2006

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is based on R

DSM

is based on T

D

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends on

θJA

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=175°C.

J(MAX)

V

=10V, VDS=20V, ID=8A

GS

=10V, VDS=20V, RL=2.5Ω,

V

GS

=3Ω

R

GEN

=8A, dI/dt=100A/µs

I

F

=8A, dI/dt=100A/µs

I

F

=175°C.

J(MAX)

and case to ambient.

θJC

9.2 nC

4.5 nC

1.6 nC

2.6 nC

3.5 ns

6ns

13.2 ns

3.5 ns

22.9

ns

18.3 nC

=25°C. The

A

=25°C. The SOA

A

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOD606

S

N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

30

(A)

D

I

10V

25

20

15

5V

4.5V

4V

10

VGS=3.5V

5

0

012345

(Volts)

V

DS

Fig 1: On-Region Characteristics

50

45

VGS=4.5V

)

40

Ω

(m

35

DS(ON)

R

30

25

VGS=10V

20

0 4 8 12 16 20

I

(A)

D

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

20

VDS=5V

15

10

(A)

D

I

125°C

5

25°C

0

2 2.5 3 3.5 4 4.5

V

(Volts)

GS

Figure 2: Transfer Characteristics

1.8

VGS=10V

=8A

1.6

I

D

1.4

VGS=4.5V

=6A

I

1.2

1

Normalized On-Resistance

D

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

90

80

)

Ω

(m

DS(ON)

R

70

60

50

40

30

25°C

125°C

20

10

246810

V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

ID=8A

1.0E+01

1.0E+00

125°C

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

25°C

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

(Volts)

V

SD

Figure 6: Body-Diode Characteristics

AOD606

S

o

N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

10

VDS=20V

=8A

I

8

D

6

(Volts)

GS

4

V

2

0

0246810

Q

(nC)

g

Figure 7: Gate-Charge Characteristics

100.0
T

=175°C, TA=25°C

J(Max)

10µs

R

DS(ON)

limited

10.0

(Amps)

D

I

1.0

100µs

1ms

10ms

DC

700

600

C

500

iss

400

300

C

Capacitance (pF)

200

oss

C

rss

100

0

0 5 10 15 20 25 30 35 40

V

DS

(Volts)

Figure 8: Capacitance Characteristics

200

T

160

T

J(Max)

=25°C

A

=175°C

120

80

Power (W)

40

0.1

0.1 1 10 100

(Volts)

V

Figure 9: Maximum Forward Biased Safe

DS

Operating Area (Note F)

10

D=Ton/T

T

J,PK=TC+PDM.ZθJC.RθJC

R

=7.5°C/W

θJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

1

0.1

Normalized Transient

Thermal Resistance

JC

θ

Z

Single Pulse

P

T

n

T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD606

S

o

N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

10

8

6

(A), Peak Avalanche Current
I

4

t

A

TA=25°C

2

D

IL

⋅

=

D

VBV

−

DD

0

0.00001 0.0001 0.001

Time in avalanche, t

(s)

A

Figure 12: Single Pulse Avalanche capability

10

8

(A)

D

6

4

Current rating I

2

0

0 25 50 75 100 125 150 175

T

(°C)

CASE

Figure 14: Current De-rating (Note B)

25

20

15

10

Power Dissipation (W)

5

0

0 25 50 75 100 125 150 175

(°C)

T

CASE

Figure 13: Power De-rating (Note B)

50

TA=25°C

40

30

20

Power (W)

10

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

10

1

D=Ton/T

T

J,PK=TA+PDM.ZθJA.RθJA

R

=60°C/W

θJA

0.1

Normalized Transient

Thermal Resistance

0.01

JA

θ

Z

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P

T

Pulse Width (s)

n

T

AOD606

Ω

j

P-Channel MOSFET Electrical Characteristics (T

Symbol Min Typ Max Units

Parameter Conditions

=25°C unless otherwise noted)

J

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage V

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage
Maximum Body-Diode Continuous Current

=-250µA, VGS=0V

I

D

V

=-32V, VGS=0V

DS

V

=0V, VGS=±20V

DS

DS=VGS ID

V

GS

V

GS

V

GS

V

DS

I

=-1A,VGS=0V

S

=-250µA

=-10V, VDS=-5V

=-10V, ID=-8A

=-4.5V, ID=-4A

=-5V, ID=-8A

T

J

=125°C

T

J

=55°C

-40 V

-1

-5

µA

±100 nA

-1 -1.8 -3 V

-30 A

35 50

62

55 70

mΩ

m

16 S

-0.75 -1 V

-8 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

V

=0V, VDS=-20V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

657 pF

143 pF

63 pF

6.5 Ω

SWITCHING PARAMETERS

(10V)

Q

g

(4.5V)

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA and the maximum allowed
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0 : January 2006

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

=-10V, VDS=-20V, ID=-8A

V

GS

=-10V, VDS=-20V, RL=2.5Ω,

V

GS

R

=3Ω

GEN

I

=-8A, dI/dt=100A/µs

F

I

=-8A, dI/dt=100A/µs

F

unction temperature of 150°C. The value in any given application depends on the user's

14.1 nC

7nC

2.2 nC

4.1 nC

8ns

12.2 ns

24 ns

12.5 ns

23.2

ns

18.2 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOD606

P-Channel MOSFET Electrical Characteristics (T

30

-10V

25

-6V

20

(A)

15

D

-I

10

5

0

012345

Fig 1: On-Region Characteristics

80

70

60

)

Ω

(m

50

DS(ON)

R

40

-5V

-V

VGS=-4.5V

-3V

(Volts)

DS

-4.5V

VGS=-4V

-3.5V

=25°C unless otherwise noted)

J

25

20

15

(A)

D

-I

10

5

0

012345

Figure 2: Transfer Characteristics

1.80

1.60

1.40

1.20

VDS=-5V

125°C

(Volts)

-V

GS

VGS=-10V
I

=-8A

D

25°C

VGS=-4.5V
I

=-6A

D

30

VGS=-10V

20

048121620

-I

(A)

D

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

120

ID=-8A

100

)

80

Ω

(m

DS(ON)

R

60

40

25°C

125°C

20

2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01

-V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

1.00

Normalized On-Resistance

0.80
0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

1.0E+01

1.0E+00

1.0E-01

1.0E-02

(A)

S

-I

1.0E-03

125°C

25°C

1.0E-04

1.0E-05

1.0E-06

0.0 0.2 0.4 0.6 0.8 1.0 1.2

(Volts)

-V

SD

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AOD606

P-Channel MOSFET Electrical Characteristics (T

10

8

6

(Volts)

GS

4

-V

2

0

0481216

100.0

10.0

(Amps)

D

-I

1.0

VDS=-20V
I

=-8A

D

(nC)

-Q

g

Figure 7: Gate-Charge Characteristics

T

=175°C, TA=25°C

J(Max)

R

DS(ON)

limited

10µs

100µs

1msDC

=25°C unless otherwise noted)

J

1200

1000

800

600

400

Capacitance (pF)

C

oss

200

C

rss

0

0 5 10 15 20 25 30

Figure 8: Capacitance Characteristics

200

160

120

80

Power (W)

40

C

-V

iss

DS

(Volts)

T
T

J(Max)

=25°C

A

=175°C

0.1

0.1 1 10 100

-V

(Volts)

DS

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

D=Ton/T
T

J,PK=TC+PDM.ZθJC.RθJC

R

=3°C/W

θJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

1

0.1

Normalized Transient

Thermal Resistance

JC

θ

Z

Single Pulse

P

T

on

T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD606

o

P-Channel MOSFET Electrical Characteristics (T

10

t

=

A

8

6

4

(A), Peak Avalanche Cu r ren t

D

-I

TA=25°C

2

0.00001 0.0001 0.001

Time in avalanche, t

A

Figure 12: Single Pulse Avalanche capability

10

8

(A)

D

6

4

Current rating -I

2

(s)

IL

⋅

D

VBV

−

DD

=25°C unless otherwise noted)

J

60

50

40

30

20

Power Dissipation (W)

10

0

0 25 50 75 100 125 150 175

Figure 13: Power De-rating (Note B)

60

50

40

30

Power (W)

20

10

T

CASE

(°C)

TA=25°C

0

0 25 50 75 100 125 150 175

(°C)

T

CASE

Figure 14: Current De-rating (Note B)

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=50°C/W

1

θJA

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

Normalized Transient

Thermal Resi stance

0.01

θJA

Z

Single Pulse

P

T

n

T

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.