Page 1
AOD446, AOD446L (Green Product)
T
T
T
N-Channel Enhancement Mode Field Effect Transistor
Aug 2004
General Description
The AOD446 uses advanced trench technology and
design to provide excellent R
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
AOD446L (Green Product) is offered in a lead-free
package.
O-252
D-PAK
G D S
Absolute Maximum Ratings T
Drain-Source Voltage 75
T
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
=25°C
C
=100°C
T
C
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
=100°C
T
C
TA=25°C
Power Dissipation
A
=70°C 1.3
T
A
Junction and Storage Temperature Range
with low gate
DS(ON)
op View
Drain Connected to
ab
=25°C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
I
C
AR
E
AR
P
D
P
DSM
TJ, T
STG
Features
VDS (V) = 75V
I
= 10 A
D
< 130 mΩ (VGS = 20V) @ 5A
R
DS(ON)
< 140 mΩ (VGS = 10V)
R
DS(ON)
< 165 mΩ (VGS = 4.5V)
R
DS(ON)
G
Maximum UnitsParameter
10
10
20
10
15
20
10
2.1
-55 to 175
D
S
V
V±25Gate-Source Voltage
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJC
17.4 30
50 60
4 7.5
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Page 2
AOD446, AOD446L
Ω
Ω
A
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=10mA, VGS=0V
D
=60V, VGS=0V
V
DS
V
=0V, VGS=±20V
DS
DS=VGS, ID
=10V, VDS=5V
V
GS
V
=20V, ID=5A
GS
V
=10V, ID=5A
GS
=4.5V, ID=2A
V
GS
=5V, ID=10A
V
DS
I
=1A, VGS=0V
S
=250µA
=55°C
T
J
=125°C
T
J
75 V
1
5
µA
100 nA
1 2.4 3 V
20 A
100 130
180 220
105 140
120 165
mΩ
m
m
9S
0.79 1 V
10 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=30V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
293 350 pF
51 pF
20 pF
2.2 3 Ω
SWITCHING PARAMETERS
(10V)
Q
g
(4.5V)
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
: The value of R
Power dissipation P
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
curve provides a single pulse rating.
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is based on R
DSM
is based on T
D
is the sum of the thermal impedence from junction to case R
θJA
and the maximum allowed junction temperature of 150°C. The value in any a given application depends
θJA
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=175°C.
J(MAX)
V
=10V, VDS=37.5V, ID=5A
GS
V
=10V, VDS=37.5V, RL=7.5Ω,
GS
R
=3Ω
GEN
I
=5A, dI/dt=100A/µs
F
=5A, dI/dt=100A/µs
I
F
=175°C.
J(MAX)
and case to ambient.
θJC
5.2 6.5 nC
2.46 3.5 nC
1nC
1.34 nC
4.6 ns
2.3 ns
14.7 ns
1.7 ns
25
30 ns
27 nC
=25°C. The
A
=25°C. The SOA
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
Page 3
AOD446, AOD446L
S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
30
25
20
15
(A)
D
I
10
5
7V
10V
6V
5V
4.5V
VGS=4V
3.5V
0
012345
(Volts)
V
DS
Fig 1: On-Region Characteristics
220
200
)
Ω
(m
DS(ON)
R
180
160
140
VGS=4.5V
VGS=10V
120
100
VGS=20V
80
0246810
I
(A)
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
10
8
6
(A)
D
I
4
VDS=5V
125°C
25°C
2
0
2 2.5 3 3.5 4 4.5 5
V
(Volts)
GS
Figure 2: Transfer Characteristics
2.2
2
1.8
VGS=20V, 5A
VGS=10V, 5A
1.6
1.4
1.2
Normalized On-Resistance
1
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=4.5V, 2A
260
240
125°C
220
)
200
Ω
(m
180
DS(ON)
160
R
25°C
140
120
100
46810
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
ID=5A
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
125°C
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
(Volts)
V
SD
Figure 6: Body-Diode Characteristics
Page 4
AOD446, AOD446L
S
s
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
10
8
VDS=37.5V
I
=5A
D
6
(Volts)
GS
4
V
2
0
0246
(nC)
Q
g
Figure 7: Gate-Charge Characteristics
100.0
T
=175°C, TA=25°C
J(Max)
10µs
R
1.0
DS(ON)
limited
1ms
100µs
10ms
DC
10.0
(Amps)
D
I
400
350
C
iss
300
250
200
Capacitance (pF)
150
100
50
C
oss
C
rs
0
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
200
160
T
T
J(Max)
A
=175°C
=25°C
120
80
Power (W)
40
0.1
0.1 1 10 100
(Volts)
V
DS
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
T
J,PK=TC+PDM.ZθJC.RθJC
R
=7.5°C/W
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
1
0.1
Normalized Transient
Thermal Resistance
JC
θ
Z
P
T
on
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
Page 5
AOD446, AOD446L
S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
12
IL
⋅
10
t
=
A
8
D
VBV
−
DD
6
4
TA=25°C
2
(A), Peak Avalanche Curren t
D
I
0
0.00001 0.0001 0.001
Time in avalanche, t
(s)
A
Figure 12: Single Pulse Avalanche capability
12
10
(A)
D
8
6
4
Current rating I
2
25
20
15
10
Power Dissipation (W)
5
0
0 25 50 75 100 125 150 175
T
(°C)
CASE
Figure 13: Power De-rating (Note B)
50
40
TA=25°C
30
20
Power (W)
10
0
0 25 50 75 100 125 150 175
(°C)
T
CASE
Figure 14: Current De-rating (Note B)
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=60°C/W
1
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Normalized Transient
Thermal Resistance
0.01
JA
θ
Z
Single Pulse
P
T
on
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
Page 6
UNIT: mm
RECOMMENDED LAND PATTERN
1
2
3
0.050-----0.035L2 0.889 1.270-----
0.040-----0.025L1 0.635 1.016-----
0.080-----0.050L 1.270 2.032-----
e1
4.572 BSC.
0.180 BSC.
0.410-----0.385H 9.779 10.414-----
E
e 2.286 BSC.
6.477 6.7316.604
-----
----- -----
0.090 BSC.
-----0.170E1 4.318
0.2650.2600.255
5.334
-----0.170D1 4.318 -----
0.210
D
5.969 6.2236.096
0.2450.2400.235
0.023-----0.019c1 0.483 0.584-----
0.0220.0200.018c 0.457 0.5590.508
b2 5.207 0.2054.45 5.461
-----
0.215
0.045-----0.035b1 0.889 1.143-----
0.0350.0300.027b 0.686 0.8890.762
0.045-----0.035A2 0.889 1.143-----
0.004-----0.000A1 0.000 0.102-----
A
M
BOL
S
Y
2.235
MIN.
DIMENSION IN MILLIMETERS
NOM.
2.286
2.388
MAX.
0.088
MIN. NOM.
DIMENSIONS IN INCHES
0.090 0.094
MAX.
5. FOLLOWED FROM JEDEC TO-252 (AA)
2. DIMENSION L IS MEASURED IN GAGE PLANE
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
GATE BURRS
NOTE
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED
Page 7
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
DPAK PACKAGE MARKING DESCRIPTION
Document No.
Version
Title
PD-00245
rev B
AOD446 Marking Description
D 4 4 6
Standard product
NOTE:
LOGO - AOS LOGO
D446 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE
PART NO. DESCRIPTION
AOD446
AOD446L
Standard product
Green product
CODE
D446
D446
D 4 4 6
Green product
Rev. A
Page 8
ALPHA & OMEGA
TO-252 (DPAK)
SEMICONDUCTOR, LTD.
TO-252 (DPAK) Carrier Tape
TO-252 (DPAK) Reel
Tape and Reel Data
TO-252 (DPAK)
Leader / Trailer
& Orientation
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