Datasheets aod444 Datasheet

AOD444, AOD444L (Green Product)

T

T

T

N-Channel Enhancement Mode Field Effect Transistor

June 2004

General Description

The AOD444 uses advanced trench technology and
design to provide excellent R

charge. This device is suitable for use in PWM, load
switching and general purpose applications.
AOD444L (Green Product) is offered in a lead-free

with low gate

DS(ON)

Features

VDS (V) = 60V
I

= 12 A

D

< 60 mΩ (VGS = 10V)

R

DS(ON)

< 85 mΩ (VGS = 4.5V)

R

DS(ON)

package.

O-252

D-PAK

G D S

Absolute Maximum Ratings T

op View

Drain Connected to

ab

=25°C unless otherwise noted

A

G

D

S

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

T

Continuous Drain
Current

G

Pulsed Drain Current

Avalanche Current

=25°C

C

=100°C

T

C

C

C

Repetitive avalanche energy L=0.1mH

TC=25°C

Power Dissipation

B

=100°C

T

C

TA=25°C

Power Dissipation

A

=70°C 1.3

T

A

Junction and Storage Temperature Range

V

DS

V

GS

60 V

±20 V

12

I

D

I

DM

I

C

AR

E

AR

P

D

P

DSM

TJ, T

STG

12

30

12

23 mJ

20

10

2

-55 to 175

A

A

W

W

°C

Thermal Characteristics
Parameter

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

B

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Typ Max

R

θJA

R

θJC

17.4 30
50 60

4 7.5

Units

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AOD444, AOD444L

Ω

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage V

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

I

=10mA, VGS=0V

D

VDS=48V, VGS=0V

V

=0V, VGS=±20V

DS

DS=VGS, ID

V

=10V, VDS=5V

GS

=10V, ID=12A

V

GS

=4.5V, ID=6A

V

GS

V

=5V, ID=12A

DS

I

=1A, VGS=0V

S

=250µA

T

J

=125°C

T

J

=55°C

60 V

1

µA

5

100 nA

1 2.4 3 V

30 A

47 60

85

67 85

mΩ

m

14 S

0.74 1 V

12 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

V

=0V, VDS=30V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

385 540 pF

55 pF

20 pF

1.35 2 Ω

SWITCHING PARAMETERS

(10V)

Q

g

Q

(4.5V)

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R

Power dissipation P
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T

D. The R

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
curve provides a single pulse rating.

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is based on R

DSM

is based on T

D

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any a given application depends

θJA

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=175°C.

J(MAX)

V

=10V, VDS=30V, ID=12A

GS

=10V, VDS=30V, RL=2.5Ω,

V

GS

=3Ω

R

GEN

=12A, dI/dt=100A/µs

I

F

=12A, dI/dt=100A/µs

I

F

=175°C.

J(MAX)

and case to ambient.

θJC

7.5 10 nC

3.8 5 nC

1.2 nC

1.9 nC

4.2 ns

3.4 ns

16 ns

2ns

27.6

35 ns

30 nC

=25°C. The

A

=25°C. The SOA

A

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD444, AOD444L

S

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

30

25

20

15

(A)

D

I

10

5

7V

10V

6V

5V

4.5V

VGS=4V

3.5V

0

012345

V

(Volts)

DS

Fig 1: On-Region Characteristics

80

)

Ω

(m

DS(ON)

R

70

60

VGS=4.5V

VGS=10V

50

40

048121620

I

(A)

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

20

VDS=5V

15

10

(A)

D

I

125°C

25°C

5

0

2 2.5 3 3.5 4 4.5 5

V

(Volts)

GS

Figure 2: Transfer Characteristics

2.2

2

1.8

VGS=10V, 12A

1.6

1.4

VGS=4.5V,6A

1.2

Normalized On-Resistance

1

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

160

)

Ω

(m

DS(ON)

R

140

120

125°C

100

80

25°C

ID=12A

60

40

46810

(Volts)

V

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

1.0E+01

1.0E+00
125°C

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

25°C

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

(Volts)

SD

Figure 6: Body-Diode Characteristics

AOD444, AOD444L

S

s

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

10

VDS=30V
I

=12A

8

D

6

(Volts)

GS

4

V

2

0

02468

(nC)

Q

g

Figure 7: Gate-Charge Characteristics

100.0
T

=175°C, TA=25°C

J(Max)

10µs

R

DS(ON)

limited

10.0

(Amps)

D

I

1.0

100µs

1ms

10ms

DC

700

600

C

500

iss

400

300

C

Capacitance (pF)

200

100

oss

C

rs

0

0 5 10 15 20 25 30

V

DS

(Volts)

Figure 8: Capacitance Characteristics

200

160

T
T

J(Max)

A

=175°C

=25°C

120

80

Power (W)

40

0.1

0.1 1 10 100

(Volts)

V

Figure 9: Maximum Forward Biased Safe

DS

Operating Area (Note F)

10

D=Ton/T

T

J,PK=TA+PDM.ZθJC.RθJC

R

=7.5°C/W

θJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

1

0.1

Normalized Transient

Thermal Resistance

JC

θ

Z

P

T

on

T

Single Pulse

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD444, AOD444L

S

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

14

IL

12

10

t

A

⋅

=

D

VBV

−

DD

8

6

4

TA=25°C

2

(A), Peak Avalanche Current

D

I

0

0.00001 0.0001 0.001

Time in avalanche, t

A

(s)

Figure 12: Single Pulse Avalanche capability

14

12

10

(A)

D

8

6

4

Current rating I

2

0

0 25 50 75 100 125 150 175

(°C)

T

CASE

Figure 14: Current De-rating (Note B)

25

20

15

10

Power Dissipation (W)

5

0

0 25 50 75 100 125 150 175

(°C)

T

CASE

Figure 13: Power De-rating (Note B)

50

TA=25°C

40

30

20

Power (W)

10

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note H)

10

1

D=Ton/T

T

J,PK=TA+PDM.ZθJA.RθJA

R

=60°C/W

θJA

0.1

Normalized Transient

Thermal Resistance

0.01

JA

θ

Z

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P

T

Pulse Width (s)

on

T

UNIT: mm

RECOMMENDED LAND PATTERN

1

2

3

0.050-----0.035L2 0.889 1.270-----

0.040-----0.025L1 0.635 1.016-----

0.080-----0.050L 1.270 2.032-----

e1

4.572 BSC.

0.180 BSC.

0.410-----0.385H 9.779 10.414-----

E

e 2.286 BSC.

6.477 6.7316.604

-----

----- -----

0.090 BSC.

-----0.170E1 4.318

0.2650.2600.255

5.334

-----0.170D1 4.318 -----

0.210

D

5.969 6.2236.096

0.2450.2400.235

0.023-----0.019c1 0.483 0.584-----

0.0220.0200.018c 0.457 0.5590.508

b2 5.207 0.2054.45 5.461

-----

0.215

0.045-----0.035b1 0.889 1.143-----

0.0350.0300.027b 0.686 0.8890.762

0.045-----0.035A2 0.889 1.143-----

0.004-----0.000A1 0.000 0.102-----

A

M

BOL

S

Y

2.235

MIN.

DIMENSION IN MILLIMETERS

NOM.

2.286

2.388

MAX.

0.088

MIN. NOM.

DIMENSIONS IN INCHES

0.090 0.094

MAX.

5. FOLLOWED FROM JEDEC TO-252 (AA)

2. DIMENSION L IS MEASURED IN GAGE PLANE

4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED

INCH DIMENSIONS ARE NOT NECESSARILY EXACT.

GATE BURRS

NOTE

1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND

3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED

ALPHA & OMEGA

SEMICONDUCTOR, LTD.

DPAK PACKAGE MARKING DESCRIPTION

Document No.

Version

Title

PD-00259

rev B

AOD444 Marking Description

D 4 4 4

Standard product

NOTE:
LOGO - AOS LOGO
D444 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE

PART NO. DESCRIPTION
AOD444
AOD444L

Standard product

Green product

CODE
D444

D444

D 4 4 4

Green product

Rev. A

ALPHA & OMEGA

TO-252 (DPAK)

SEMICONDUCTOR, INC.

TO-252 (DPAK) Carrier Tape

TO-252 (DPAK) Reel

Tape and Reel Data

TO-252 (DPAK)

Leader / Trailer

& Orientation