Datasheets aod442 Datasheet

p

AOD442, AOD442L (Lead-Free)

T

Top

T

N-Channel Enhancement Mode Field Effect Transistor

Rev 0: Dec 2003
Rev 1: Mar 2004

General Description

The AOD442 uses advanced trench technology to
provide excellent R

device is suitable for use as a load switch or in PWM
applications. AOD442L is offered in a lead-free
package.

and low gate charge. This

DS(ON)

O-252

D-PAK

Drain Connected to

ab

G D S

View

Features

VDS (V) = 60V
I

= 38A

D

R

DS(ON)

R

DS(ON)

Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain
Current

B,G

TC=25°C

TC=100°C

G

B

Pulsed Drain Current

Avalanche Current

C

Repetitive avalanche energy L=0.1mH

TC=25°C

Power Dissipation

B

T

=100°C 30

C

Junction and Storage Temperature Range

Symbol

V

DS

V

GS

I

D

I

DM

I

C

AR

E

AR

P

D

TJ, T

STG

< 20mΩ (VGS = 10V)

< 25mΩ (VGS = 4.5V)

D

G

S

Maximum Units

60

±20

38

27

60

30

140

60

-55 to 175 °C

V

V

A

A

mJ

W

Thermal Characteristics
Parameter

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

A

t ≤ 10s
Steady-State

Steady-State

R

θJA

R

θJL

17.4 25
51 60

1.8 2.5

Symbol Ty

Max

Units

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AOD442. AOD442L

Ω

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage V
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

=250µA, VGS=0V

I

D

V

=48V, VGS=0V

DS

V

=0V, VGS= ±20V

DS
DS=VGS ID

V

GS

V

GS

V

GS

V

DS

I

=1A,VGS=0V

S

=250µA
=10V, VDS=5V
=10V, ID=20A

=4.5V, ID=20A
=5V, ID=20A

=55°C

T

J

=125°C

T

J

60 V

1
5

µA

100 nA

1 2.1 3 V

60 A

16 20
31
20 25

mΩ
m

4.5 5.6 S

0.74 1 V
4A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V

V

=0V, VDS=30V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

1920 2300 pF

155 pF
116 pF

0.65 0.8 Ω

SWITCHING PARAMETERS

(10V)

Q

g

(4.5V)

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
dissipation P
user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on T
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the

θJA

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

J(MAX)

=175°C.

J(MAX)

V

=10V, VDS=30V, ID=20A

GS

=10V, VDS=30V, RL=1.5Ω,

V

GS

R

=3Ω

GEN

I

=20A, dI/dt=100A/µs

F

I

=20A, dI/dt=100A/µs

F

=175°C.

J(MAX)

and case to ambient.

θJC

47.6 68 nC

24.2 30 nC

6nC

14.4 nC

7.4 ns

5.1 ns

28.2 ns

5.5 ns
34 41

ns

46 nC

=25°C. The Power

A

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD442. AOD442L

V

GS

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

10V

50

4.5V

40

4V

30

(A)

D

I

20

3.5V

10

VGS=3V

0

012345

V

(Volts)

DS

Fig 1: On-Region Characteristics

24

22

)

Ω

20

=4.5V

(m

18

DS(ON)

R

VGS=10V

16

14

0 10203040

I

(A)

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

50

40

VDS=5V

125°C

30

(A)

D

I

20

10

0

2 2.5 3 3.5 4

V

(Volts)

GS

Figure 2: Transfer Characteristics

2.4

2.2
2

VGS=10V
ID=20A

1.8

1.6

1.4

VGS=4.5V
ID=20A

1.2

Normalized On-Resistance

1

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

25°C

50

ID=20A

40

)

Ω

(m

DS(ON)

R

30

125°C

20

25°C

10

246810

V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0

(Volts)

V

SD

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AOD442. AOD442L

S

s

o

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

10

VDS=30V

=20A

I

8

D

6

(Volts)

GS

4

V

2

0

0 1020304050

Q

(nC)

g

Figure 7: Gate-Charge Characteristics

100.0

R

DS(ON)

limited

10.0

(Amps)

D

I

1.0
T

T

J(Max)
A

=175°C

=25°C

100µs

1m

10µs

Capacitance (pF)

800

600

400

Power (W)

200

3500

3000

C

2500

iss

2000
1500

C

1000

oss

C

rss

500

0

0 5 10 15 20 25 30

V

(Volts)

DS

Figure 8: Capacitance Characteristics

T

J(Max)

T

=25°C

A

=175°C

0.1

0.1 1 10 100

V

(Volts)

DS

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

D=Ton/T
T

J,PK=Tc+PDM.ZθJc.RθJc

R

=2.5°C/W

θJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0
1E-05 1E-04 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

1

P

0.1

Normalized Transient

Thermal Resistance

θJc

Z

Single Pulse

D

T

n

T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD444, AOD444L

S

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

60

IL

⋅

50

t

=

A

D

VBV

−

DD

40

30

20

10

(A), Peak Avalanche Curren t

D

I

TA=25°C

0

0.00001 0.0001 0.001

Time in avalanche, t

A

(s)

Figure 12: Single Pulse Avalanche capability

50

40

(A)

D

30

20

Current rating I

10

80

60

40

20

Power Dissipation (W)

0

0 25 50 75 100 125 150 175

T

(°C)

CASE

Figure 13: Power De-rating (Note B)

50

TA=25°C

40

30

20

Power (W)

10

0

0 25 50 75 100 125 150 175

(°C)

T

CASE

Figure 14: Current De-rating (Note B)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

θJA

1

=60°C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

0.1

P

Normalized Transient

Thermal Resistance

0.01

JA

θ

Z

Single Pulse

D

T

on

T

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

1 32

0.050-----0.035L2 0.889 1.270-----

0.040-----0.025L1 0.635 1.016-----

0.080-----0.050L 1.270 2.032-----

e1 4.572 BSC.

0.180 BSC.

0.410-----0.385H 9.779 10.414-----

e 2.286 BSC.

-----

----- -----

-----0.170E1 4.318

0.090 BSC.

0.2650.2600.255E 6.477 6.7316.604

D1

4.318

-----

5.334

0.170

-----

0.210

0.2450.2400.235D 5.969 6.2236.096

0.023-----0.019c1 0.483 0.584-----

0.0220.0200.018c 0.457 0.5590.508

b2 5.207 0.2054.45 5.461 ----- 0.215

0.045-----0.035b1 0.889 1.143-----

0.0350.0300.027b 0.686 0.8890.762

0.045-----0.035A2 0.889 1.143-----

0.004-----0.000A1 0.000 0.102-----

A

2.235

SYMBO

L

MIN.

DIMENSION IN MILLIMETERS

5. FOLLOWED FROM JEDEC TO-252 (AA)

NOM.

2.286

MAX.

2.388

0.088

MIN. NOM.

DIMENSIONS IN INCHES

0.090 0.094

MAX.

1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND

2. DIMENSION L IS MEASURED IN GAGE PLANE

3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED

4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED

INCH DIMENSIONS ARE NOT NECESSARILY EXACT.

NOTE

GATE BURRS

ALPHA & OMEGA

SEMICONDUCTOR, LTD.

DPAK PACKAGE MARKING DESCRIPTION

Document No.

Version

Title

PD-00256

rev B

AOD442 Marking Description

D 4 4 2

Standard product

NOTE:
LOGO - AOS LOGO
D442 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE

PART NO. DESCRIPTION
AOD442
AOD442L

Standard product

Green product

CODE
D442

D442

D 4 4 2

Green product

Rev. A

ALPHA & OMEGA

TO-252 (DPAK)

SEMICONDUCTOR, LTD.

TO-252 (DPAK) Carrier Tape

TO-252 (DPAK) Reel

Tape and Reel Data

TO-252 (DPAK)

Leader / Trailer

& Orientation