Datasheets aod438 Datasheet

x

A

A

AOD438

T

T

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AOD438 uses advanced trench technology to
provide excellent R

gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.

Standard Product AOD438 is Pb-free (meets ROHS
& Sony 259 specifications). AOD438L is a Green
Product ordering option. AOD438 and AOD438L are
electrically identical.

O-252

D-PAK

G D S

Absolute Maximum Ratings T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current

B,G

Pulsed Drain Current
Avalanche Current

Repetitive avalanche energy L=0.1mH

Power Dissipation

Power Dissipation

Junction and Storage Temperature Range

, low gate charge and low

DS(ON)

op View
Drain Connected
to Tab

=25°C unless otherwise noted

A

Symbol

V

DS

V

C

TC=100°C

C

B

C

G

=25°C

T

TC=25°C

B

T

=100°C

C

TA=25°C

A

=70°C 1.6

T

A

GS

I

D

I

DM

I

AR

E

AR

P

D

P

DSM

TJ, T

STG

Features

VDS (V) = 30V
I

D

R
R

G

= 85A

< 3.5mΩ (VGS = 10V)

DS(ON)

< 5.5mΩ (VGS = 4.5V)

DS(ON)

D

S

Maximum UnitsParameter

30

85

63

200

30

112 mJ

100

50

2.5

-55 to 175

V

V±20

A

A

W

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

C

t ≤ 10s
Steady-State
Steady-State

Symbol Typ Ma

R

θJA

R

θJC

14.2 20
39 50

0.8 1.5

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AOD438

Ω

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage V
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

I

=250µA, VGS=0V

D

=24V, VGS=0V

V

DS

=0V, VGS= ±20V

V

DS
DS=VGS ID

V

GS

V

GS

V

GS

V

DS

=1A,VGS=0V

I

S

=250µA
=10V, VDS=5V
=10V, ID=20A

=4.5V, ID=20A
=5V, ID=20A

=55°C

T

J

=125°C

T

J

30 V

1

µA

5

100 nA

1 1.8 3 V

85 A

2.8 3.5

4.4 5.5

4.4 5.5

mΩ
m

106 S

0.72 1 V
85 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V

VGS=0V, VDS=15V, f=1MHz

=0V, VDS=0V, f=1MHz

GS

3200 3840 pF

590 pF
414 pF

0.54 0.7 Ω

SWITCHING PARAMETERS

(10V)

Q

g

(4.5V)

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
Power dissipation P
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.

B. The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev 2: July 2005

Total Gate Charge
Total Gate Charge
Gate Source Charge

VGS=4.5V, VDS=15V, ID=20A

Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime

V

R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is based on steady-state R

DSM

is based on T

D

is the sum of the thermal impedence from junction to case R

θJA

J(MAX)

and the maximum allowed junction temperature of 150°C. The value in any a given

θJA

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

IF=20A, dI/dt=100A/µs

I

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

=10V, VDS=15V, RL=0.75Ω,

GS

=3Ω

GEN

=20A, dI/dt=100A/µs

F

=175°C.

J(MAX)

and case to ambient.

θJC

63 76 nC
33 40 nC

8.6 nC

17.6 nC
12 ns

15.5 ns
40 ns
14 ns
34

41 ns

30 nC

=25°C. The

A

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AOD438

V

GS

V

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

50

40

30

(A)

D

I

20

10

0

012345

10V

4.0V

3.5V

VGS=3V

V

(Volts)

DS

Fig 1: On-Region Characteristics

(A)
I

60

50

VDS=5V

40

30

D

20

125°C

25°C

10

0

1.5 2 2.5 3 3.5 4 4.5

V

(Volts)

GS

Figure 2: Transfer Characteristics

8

7

)

Ω

(m

DS(ON)

R

6

5

4

=4.5

VGS=10V

3

2

0 102030405060

I

(A)

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

8

)

Ω

(m

DS(ON)

R

6

4

ID=20A

125°C

25°C

2

1.6

1.4

ID=20A

VGS=10V

1.2

VGS=4.5V

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

1.0E+02

1.0E+01
125°C

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

25°C

1.0E-03

1.0E-04

0

246810

(Volts)

V

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

(Volts)

V

SD

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AOD438

0s

o

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

8

VDS=15V
I

=20A

D

6

(Volts)

GS

4

V

2

0

0 10203040506070

(nC)

Q

g

Figure 7: Gate-Charge Characteristics

1000

R

DS(ON)

100

(Amps)

D

I

limited

10

1ms

10ms

0.1s

100µs

1s

T

=150°C

1

T

J(Max)

=25°C

A

1

DC

0.1

0.1 1 10 100

V

(Volts)

DS

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10µs

5000

4000

C

iss

3000

2000

Capacitance (pF)

C

oss

1000

C

rss

0

0 5 10 15 20 25 30

V

(Volts)

DS

Figure 8: Capacitance Characteristics

100

80

T
T

J(Max)

=25°C

A

=150°C

60

40

Power (W)

20

0

0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note F)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=50°C/W

θJA

1

0.1

Normalized Transient

Thermal Resistance

0.01

JA

θ

Z

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Pulse Width (s)

P

D

T

n

T

AOD438

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120

TA=25°C

100

80

60

t

A

40

20

(A), Peak Avalanche Current

D

I

IL

⋅

=

D

VBV

−

DD

0

0.00001 0.0001 0.001 0.01

Time in avalanche, t

(s)

A

Figure 12: Single Pulse Avalanche capability

100

80

(A)

D

60

40

Current rating I

20

120

100

80

60

40

Power Dissipation (W)

20

0

0 25 50 75 100 125 150 175

T

(°C)

CASE

Figure 13: Power De-rating (Note B)

0

0 25 50 75 100 125 150 175

T

(°C)

CASE

Figure 14: Current De-rating (Note B)

Alpha & Omega Semiconductor, Ltd.

ALPHA & OMEGA

SEMICONDUCTOR, LTD.

DPAK PACKAGE MARKING DESCRIPTION

Document No.

Version

Title

PD-00149

rev D

AOD438 Marking Description

D 4 3 8

Standard product

NOTE:
LOGO - AOS LOGO
D438 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE

PART NO. DESCRIPTION
AOD438
AOD438L

Standard product

Green product

CODE
D438

D438

D 4 3 8

Green product

Rev. A

ALPHA & OMEGA

TO-252 (DPAK)

SEMICONDUCTOR, LTD.

TO-252 (DPAK) Carrier Tape

TO-252 (DPAK) Reel

Tape and Reel Data

TO-252 (DPAK)

Leader / Trailer

& Orientation