Page 1
x
A
A
AOD436
T
T
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD436 uses advanced trench technology to
provide excellent R
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOD436 is Pb-free (meets ROHS
& Sony 259 specifications). AOD436L is a Green
Product ordering option. AOD436 and AOD436L are
electrically identical.
O-252
D-PAK
G D S
Absolute Maximum Ratings T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
, low gate charge and low
DS(ON)
op View
Drain Connected
to Tab
=25°C unless otherwise noted
A
Symbol
V
DS
V
C
TC=100°C
C
B
C
G
=25°C
T
TC=25°C
B
T
=100°C
C
TA=25°C
A
=70°C 1.6
T
A
GS
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
TJ, T
STG
Features
VDS (V) = 30V
= 60A (VGS = 10V)
I
D
R
DS(ON)
R
DS(ON)
D
G
S
< 7.5mΩ (VGS = 10V)
< 13mΩ (VGS = 4.5V)
Maximum UnitsParameter
30
60
43
130
30
113 mJ
50
25
2.5
-55 to 175
V
V±20
A
A
W
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Ma
R
θJA
R
θJC
14.2 20
39 50
23
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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AOD436
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=250µA, VGS=0V
D
V
=24V, VGS=0V
DS
V
=0V, VGS= ±20V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
DS
I
=1A,VGS=0V
S
=250µA
=10V, VDS=5V
=10V, ID=20A
=4.5V, ID=20A
=5V, ID=20A
=55°C
T
J
=125°C
T
J
30 V
1
µA
5
100 nA
1 1.8 3 V
85 A
5.4 7.5
8.1 9.7
9.8 13
mΩ
mΩ
88 S
0.71 1 V
85 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=15V, f=100kHz
V
GS
=0V, VDS=0V, f=1MHz
GS
1520 1825 pF
306 pF
214 pF
0.47 0.7 Ω
SWITCHING PARAMETERS
(10V)
Q
g
Q
(4.5V)
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
Power dissipation P
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev 4 : July 2005
Total Gate Charge
Total Gate Charge
Gate Source Charge
V
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V
R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is based on steady-state R
DSM
is based on T
D
is the sum of the thermal impedence from junction to case R
θJA
θJA
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
IF=20A, dI/dt=100A/µs
I
F
and the maximum allowed junction temperature of 150°C. The value in any a given
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
=4.5V, VDS=15V, ID=20A
GS
=10V, VDS=15V, RL=0.75Ω,
GS
=3Ω
GEN
=20A, dI/dt=100A/µs
=175°C.
J(MAX)
and case to ambient.
θJC
31.9 39 nC
16.2 20 nC
5nC
9.6 nC
7ns
11.6 ns
24.2 ns
7.7 ns
23.8
30 ns
15.7 nC
=25°C. The
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
Page 3
AOD436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
4.0V
20
3.5V
(A)
D
I
10
VGS=3V
0
012345
(Volts)
V
DS
Fig 1: On-Region Characteristics
12
11
10
)
Ω
(m
DS(ON)
R
9
8
7
6
VGS=4.5V
VGS=10V
5
4
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
50
VDS=5V
40
125°C
(A)
30
D
I
20
25°C
10
0
1.5 2 2.5 3 3.5 4 4.5
V
(Volts)
GS
Figure 2: Transfer Characteristics
1.8
1.6
ID=20A
VGS=10V
1.4
1.2
1
Normalized On-Resistance
VGS=4.5V
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
16
ID=20A
12
)
Ω
(m
DS(ON)
R
8
25°C
4
2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
125°C
(A)
S
I
1.0E+02
1.0E+01
125°C
1.0E+00
1.0E-01
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
(Volts)
SD
Figure 6: Body-Diode Characteristics
Page 4
AOD436
T
o
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
VDS=15V
=20A
I
D
6
(Volts)
GS
4
V
2
0
0 5 10 15 20 25 30 35
(nC)
Q
g
Figure 7: Gate-Charge Characteristics
1000
R
DS(ON)
limited
100
1ms
10ms
10
(Amps)
D
I
T
=150°C
T
J(Max)
A
=25°C
1
0.1s
DC
0.1
0.1 1 10 100
V
(Volts)
DS
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100µs
10µs
2400
2000
C
iss
1600
1200
C
800
Capacitance (pF)
oss
400
C
rss
0
0 5 10 15 20 25 30
(Volts)
V
DS
Figure 8: Capacitance Characteristics
100
80
T
T
J(Max)
A
=150°C
=25°C
60
40
Power (W)
20
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=50°C/W
θJA
1
0.1
Normalized Transient
Thermal Resistance
0.01
JA
θ
Z
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
P
D
n
T
Page 5
AOD436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=25°C
IL
⋅
40
t
A
D
=
VBV
−
DD
20
(A), Peak Avalanche Current
D
I
0
0.00001 0.0001 0.001 0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
100
80
(A)
D
60
40
Current rating I
20
120
100
80
60
40
Power Dissipation (W)
20
0
0 25 50 75 100 125 150 175
(°C)
T
CASE
Figure 13: Power De-rating (Note B)
0
0 25 50 75 100 125 150 175
T
(°C)
CASE
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
Page 6
Page 7
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
DPAK PACKAGE MARKING DESCRIPTION
Document No.
Version
Title
PD-00148
rev C
AOD436 Marking Description
D 4 3 6
Standard product
NOTE:
LOGO - AOS LOGO
D436 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE
PART NO. DESCRIPTION
AOD436
AOD436L
Standard product
Green product
CODE
D436
D436
D 4 3 6
Green product
Rev. A
Page 8
ALPHA & OMEGA
TO-252 (DPAK)
SEMICONDUCTOR, LTD.
TO-252 (DPAK) Carrier Tape
TO-252 (DPAK) Reel
Tape and Reel Data
TO-252 (DPAK)
Leader / Trailer
& Orientation
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