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p
AOD422
T
Top
T
N-Channel Enhancement Mode Field Effect Transistor
August 2003
General Description
The AOD422 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
, low gate charge and
DS(ON)
Features
VDS (V) = 20V
I
= 10 A
D
< 22mΩ (VGS = 4.5V)
R
DS(ON)
R
< 26mΩ (VGS = 2.5V)
DS(ON)
R
< 34mΩ (VGS = 1.8V)
DS(ON)
ESD Rating: 2000V HBM
O-252
-
G D S
Absolute Maximum Ratings T
View
Drain Connected to
ab
=25°C unless otherwise noted
A
G
Symbol
Drain-Source Voltage 20
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
TC=25°C
T
=100°C 10
C
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
T
=100°C 20
C
TA=25°C
Power Dissipation
A
T
=70°C 1.6
A
Junction and Storage Temperature Range -55 to 150 °C
V
DS
V
GS
I
D
I
DM
I
C
AR
E
AR
P
D
P
DSM
TJ, T
STG
D
S
Maximum UnitsParameter
V
V±8Gate-Source Voltage
10
A
30
15 A
2mJ
50
2.5
W
W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
16.7 25
40 50
1.9 2.5
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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AOD422
µ
µ
Ω
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
Gate Threshold Voltage VDS=V
On state drain current
VGS=4.5V, VDS=5V
VGS=4.5V, ID=10A
Static Drain-Source On-Resistance
VGS=2.5V, ID=8A
VGS=1.8V, ID=5A
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=5V, ID=10A
IS=1A,VGS=0V
G
GS ID
TJ=55°C
=250µA
TJ=125°C
20 V
1
5
µA
±1
±10
0.4 0.6 1 V
30 A
18 22
25 31
21 26
26 34
mΩ
m
m
30 S
0.76 1 V
10 A
A
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
VGS=0V, VDS=10V, f=1MHz
=0V, VDS=0V, f=1MHz
GS
1160 pF
187 pF
146 pF
1.5 Ω
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr 17.6 ns
Q
rr 6.5
A: The value of R
Power dissipation P
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to.
B. The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=10V, ID=10A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=1Ω,
R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is based on R
DSM
is the sum of the thermal impedence from junction to case R
θJA
and the maximum allowed junction temperature of 150°C. The value in any a given application depends
θJA
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
J(MAX)
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
GEN
=3Ω
=150°C.
and case to ambient.
θJC
16 nC
0.8 nC
3.8 nC
6.2 ns
12.7 ns
51.7 ns
16 ns
nC
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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