Page 1
x
A
A
AOD417
A
T
T
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD417 uses advanced trench technology to
provide excellent R
, low gate charge and low
DS(ON)
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
OD417 is Pb-free (meets ROHS & Sony 259
VDS (V) = -30V
= -25A (VGS = -10V)
I
D
R
R
< 34mΩ (VGS = -10V)
DS(ON)
< 55mΩ (VGS = -4.5V)
DS(ON)
specifications).
O-252
D-PAK
op View
Drain Connected
to Tab
G
G D S
Absolute Maximum Ratings T
Drain-Source Voltage -30
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
T
TA=100°C
C
C
=25°C
A
Repetitive avalanche energy L=0.3mH
TC=25°C
Power Dissipation
B
=100°C
T
C
TA=25°C
Power Dissipation
A
=70°C 3.2
T
A
Junction and Storage Temperature Range -55 to 175
=25°C unless otherwise noted
A
Symbol
V
DS
V
G
C
GS
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
TJ, T
STG
Maximum UnitsParameter
-25
-20
-60
-14
30
50
25
5
D
S
V
V±20
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Ma
R
θJA
R
θJL
16.7 25
40 50
2.5 3
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Page 2
AOD417
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
=-250µA, VGS=0V
I
D
VDS=-24V, VGS=0V
V
=0V, VGS=±20V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
DS
I
=-1A,VGS=0V
S
=-250µA
=-10V, VDS=-5V
=-10V, ID=-20A
=-4.5V, ID=-7A
=-5V, ID=-20A
T
J
=125°C
T
J
=55°C
-30 V
-1
-5
µA
±100 nA
-1 -1.9 -3 V
-60 A
27 34
36
40 55
mΩ
m
18 S
-0.75 -1 V
-6 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=-15V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
920 pF
140 pF
90 pF
69Ω
SWITCHING PARAMETERS
(10V)
Q
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
(4.5V)
g
gs
gd
rr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
=-10V, VDS=-15V, ID=-20A
GS
V
=-10V, VDS=-15V, RL=0.75Ω,
GS
=3Ω
R
GEN
=-20A, dI/dt=100A/µs
I
F
=-20A, dI/dt=100A/µs
I
F
16.2 nC
8.2 nC
2.9 nC
3.6 nC
8ns
30 ns
22 ns
26 ns
23
ns
14 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
=25°C. The Power dissipation P
T
A
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
curve provides a single pulse rating.
Rev 0: Oct. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is the sum of the thermal impedence from junction to case R
θJA
is based on T
D
is based on R
DSM
J(MAX)
=175°C.
J(MAX)
(<10s) and the maximum allowed junction temperature of 150°C. The value in any given
θJA
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
=175°C.
J(MAX)
and case to ambient.
θJC
=25°C. The SOA
A
Alpha & Omega Semiconductor, Ltd.
Page 3
AOD417
S
A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
60
-10V
(A)
D
-I
50
40
30
20
-6V
ID=-10mA, VGS=0V
-4.5V
VGS=-3.5V
10
0
012345
-VDS (Volts)
Figure 1: On-Region Characteristics
60
55
50
)
Ω
(m
DS(ON)
R
45
40
35
30
VGS=-4.5V
VGS=-10V
25
20
0 5 10 15 20 25
-I
(A)
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
VDS=-5V
20
15
(A)
D
-I
10
125°C
5
25°C
-40°C
0
1 1.5 2 2.5 3 3.5 4 4.5 5
(Volts)
-V
GS
Figure 2: Transfer Characteristics
850
1.6
1.4
VGS=-10V
=-20A
I
VGS=-4.5V
=-7
I
Normalized On-Resistance
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
185
90
80
1.0E+01
ID=-20A
70
60
)
Ω
(m
DS(ON)
R
50
40
30
125°C
25°C
20
345678910
-V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+00
1.0E-01
1.0E-02
(A)
S
-I
1.0E-03
1.0E-04
1.0E-05
1.0E-06
125°C
-40°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0
(Volts)
-V
SD
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
Page 4
AOD417
S
ss
o
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
10
VDS=-15V
I
=-20A
D
8
ID=-10mA, VGS=0V
6
(Volts)
GS
4
-V
2
0
0 3 6 9 12 15 18
(nC)
-Q
g
Figure 7: Gate-Charge Characteristics
1000.0
100.0
10.0
R
(Amps)
1.0
D
I
DS(ON)
10µs
100µs
1500
1250
C
iss
1000
750
500
Capacitance (pF)
250
C
r
C
oss
0
0 5 10 15 20 25 30
-V
(Volts)
DS
Figure 8: Capacitance Characteristics
200
160
T
T
J(Max)
C
120
80
Power (W)
850
185
90
=175°C
=25°C
0.1
0.0
T
=175°C
J(Max)
=25°C
T
C
0.01 0.1 1 10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
40
0
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
T
J,PK=Tc+PDM.ZθJC.RθJC
R
=3°C/W
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Normalized Transient
Thermal Resistance
JC
θ
Z
Single Pulse
P
T
n
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
Page 5
AOD417
S
o
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
120
100
ID=-10mA, VGS=0V
80
TA=25°C
60
40
TA=150°C
(A), Peak Avalanche Current
20
D
-I
0
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
(s)
A
Figure 12: Single Pulse Avalanche capability
30
25
20
15
10
Current rating
60
50
40
30
20
Power Dissipation (W)
10
0
0 25 50 75 100 125 150 175
T
(°C)
CASE
Figure 13: Power De-rating (Note B)
850
185
60
50
40
30
Power (W)
20
90
TA=25°C
5
0
0 25 50 75 100 125 150 175
T
(°C)
CASE
Figure 14: Current De-rating (Note B)
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=50°C/W
θJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Normalized Transient
Thermal Resistance
0.01
JA
θ
Z
Single Pulse
P
T
n
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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