Datasheets aod413 Datasheet

AOD413, AOD413L (Lead-Free)

T

T

T

P-Channel Enhancement Mode Field Effect Transistor

Mar. 2005

General Description

The AOD413 uses advanced trench technology to
provide excellent R

gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. AOD413L is offered in

, low gate charge and low

DS(ON)

Features

VDS (V) = -40V
I

= -12A

D

R
R

< 45mΩ (VGS = -10V)

DS(ON)

< 63mΩ (VGS = -4.5V)

DS(ON)

a lead-free package.

O-252

D-PAK

G D S

op View

Drain Connected to

ab

G

D

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Symbol

Drain-Source Voltage -40

Gate-Source Voltage

Continuous Drain
Current

B,G

T

A

TA=100°C

=25°C

G

G

Pulsed Drain Current

Avalanche Current

C

Repetitive avalanche energy L=0.1mH

TC=25°C

Power Dissipation

B

T

=100°C

C

TA=25°C

Power Dissipation

A

=70°C 1.6

T

A

Junction and Storage Temperature Range -55 to 175

V

DS

V

GS

I

D

I

DM

I

C

AR

E

AR

P

D

P

DSM

TJ, T

STG

Maximum UnitsParameter

-12

-12

-30

-12

30

50

25

2.5

V

V±20

A

A

mJ

W

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

C

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Typ Max

R

θJA

R

θJL

16.7 25
40 50

2.5 3

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AOD413, AOD413L

Ω

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage V
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

I

=-250µA, VGS=0V

D

=-32V, VGS=0V

V

DS

V

=0V, VGS=±20V

DS
DS=VGS ID

V

GS

V

GS

V

GS

V

DS

I

=-1A,VGS=0V

S

=-250µA
=-10V, VDS=-5V
=-10V, ID=-12A

=-4.5V, ID=-8A
=-5V, ID=-12A

T

J

=125°C

T

J

=55°C

-40 V

-1

-5

µA

±100 nA

-1 -1.8 -3 V

-30 A
36 45
56 70
51 63

mΩ
m

16 S

-0.75 -1 V

-12 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V

V

=0V, VDS=-20V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

657 pF
143 pF

63 pF

6.5 Ω

SWITCHING PARAMETERS

(10V)

Q

g

Q

(4.5V)

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

=-10V, VDS=-20V, ID=-12A

V

GS

=-10V, VDS=-20V, RL=1.7Ω,

V

GS

R

=3Ω

GEN

IF=-12A, dI/dt=100A/µs
I

=-12A, dI/dt=100A/µs

F

14.1 nC
7nC

2.2 nC

4.1 nC
8ns

12.2 ns
24 ns

12.5 ns

23.2

ns

18.2 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD413, AOD413L

C

V

C

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

-10V

25

-5V

-4.5V

-6V

20

(A)

15

D

-I

-3.5V

10

VGS=-3V

5

0

012345

-V

(Volts)

DS

Fig 1: On-Region Characteristics

70
65
60

)

Ω

(m

DS(ON)

R

55
50
45
40

VGS=-4.5V

VGS=-10

35
30

0 5 10 15 20

(A)

-I

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

-4V

25

VDS=-5V

20

15

(A)

D

-I

10

125°

5

25°C

0

1 1.5 2 2.5 3 3.5 4 4.5 5

(Volts)

-V

GS

Figure 2: Transfer Characteristics

1.80
VGS=-10V

=-12A

I

1.60

1.40

1.20

1.00

Normalized On-Resistance

D

VGS=-4.5V
I

D

0.80

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

=-8A

150
135
120

)

105

Ω

(m

90

DS(ON)

75

R

125°C

60
45

25°

30

345678910

-V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

ID=-12A

1.0E+01

1.0E+00
125°C

1.0E-01

1.0E-02

(A)

S

-I

1.0E-03

1.0E-04

1.0E-05

25°C

1.0E-06

0.0 0.2 0.4 0.6 0.8 1.0

-V

(Volts)

SD

Figure 6: Body-Diode Characteristics

AOD413, AOD413L

S

)

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

10

VDS=-15V

=-12A

I

D

8

6

(Volts)

GS

4

-V

2

0

03691215

-Q

(nC)

g

Figure 7: Gate-Charge Characteristics

100.0
T

=175°C, TA=25°C

J(Max

10µs

10.0

R

DS(ON)

limited

1ms

100µs

(Amps)

D

-I

1.0

10ms

DC

1000

C

750

iss

500

C

oss

Capacitance (pF)

250

C

rss

0

0 10203040

-V

(Volts)

DS

Figure 8: Capacitance Characteristics

200

160

T
T

J(Max)

=25°C

A

=175°C

120

80

Power (W)

40

0.1

0.1 1 10 100

(Volts)

-V

DS

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

0

0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJC.RθJC

R

=3°C/W

θJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.1

Normalized Transient

Thermal Resi stan ce

θJA

Z

Single Pulse

P

T

on

T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD413, AOD413L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

14

IL

⋅

D

VBV

−

DD

12

t

=

A

10

8

(A), Peak Avalanche Current

D

-I

TA=25°C

6

0.00001 0.0001 0.001

Time in avalanche, t

(s)

A

Figure 12: Single Pulse Avalanche capability

14

12

10

(A)

D

8

6

4

Current rating -I

2

60

50

40

30

20

Power Dissipation (W)

10

0

0 25 50 75 100 125 150 175

(°C)

T

CASE

Figure 13: Power De-rating (Note B)

60

50

TA=25°C

40

30

Power (W)

20

10

0

0 25 50 75 100 125 150 175

T

(°C)

CASE

Figure 14: Current De-rating (Note B)

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=50°C/W

θJA

1

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

Normalized Transient

Thermal Resistance

0.01

JA

θ

Z

Single Pulse

P

T

on

T

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

ALPHA & OMEGA

TO-252 (DPAK)

SEMICONDUCTOR, LTD.

TO-252 (DPAK) Carrier Tape

TO-252 (DPAK) Reel

Tape and Reel Data

TO-252 (DPAK)

Leader / Trailer

& Orientation